Volume 51; Issue 20

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Applied Physics Letters
Volume 51; Issue 20

Applied Physics Letters

Volume 51; Issue 20

1

High-quality InAlAs grown by organometallic vapor phase epitaxy

Aina, Leye, Mattingly, Mike

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 516 KB

english, 1987

2

Determination of the natural valence-band offset in the InxGa1−xAs system

Hwang, J., Pianetta, P., Shih, C. K., Spicer, W. E., Pao, Y.-C., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 502 KB

english, 1987

3

Photoresistivity and photo-Hall-effect topography on semi-insulating GaAs wafers

Look, D. C., Pimentel, E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 520 KB

english, 1987

4

Optical amplification by monolithically integrated distributed-feedback lasers

Inoue, H., Tsuji, S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 486 KB

english, 1987

5

Concentration dependence of optical emission from sulfur-doped crystalline silicon

Brown, T. G., Bradfield, P. L., Hall, D. G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 546 KB

english, 1987

6

Measurement of small rotations by eigenvector flips in a quasi-isotropic Fabry–Perot

Le Grand, Y., Medjaou, M., Le Floch, A., Le Naour, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 551 KB

english, 1987

7

Longitudinal electric field effects on GaAs-AlAs type-II superlattices

Danan, G., Ladan, F. R., Mollot, F., Planel, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 591 KB

english, 1987

8

Continuous room-temperature operation of a 759-nm GaAlAs distributed feedback laser

Takigawa, S., Kume, M., Hamada, K., Tateoka, K., Naitoh, H., Yoshikawa, N., Yamamoto, A., Shimizu, H., Itoh, K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 476 KB

english, 1987

9

Comparison of interface positive charge generated in metal-oxide-silicon devices by high-field electron injection and x-ray irradiation

Mott, D. B., Buchner, S. P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 537 KB

english, 1987

10

Direct imaging of 13-Å-diam Au clusters using scanning tunneling microscopy

Baró, A. M., Bartolome, A., Vazquez, L., García, N., Reifenberger, R., Choi, E., Andres, R. P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 702 KB

english, 1987

11

One-dimensional GaAs wires fabricated by focused ion beam implantation

Hiramoto, Toshiro, Hirakawa, Kazuhiko, Iye, Yasuhiro, Ikoma, Toshiaki

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 608 KB

english, 1987

12

Mechanism of a hydrogenating polycrystalline silicon in hydrogen plasma annealing

Nakazawa, Kenji, Arai, Hitoshi, Kohda, Shigeto

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 521 KB

english, 1987

13

Dynamic sensitivity and thermal noise analysis of a magnetoelastic amorphous metal low-frequency magnetometer

Mermelstein, M. D., Dandridge, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 605 KB

english, 1987

14

Photoconduction dynamics in a GaAs/AlGaAs superlattice photoconductor

Minot, C., Le Person, H., Alexandre, F., Palmier, J. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 461 KB

english, 1987

15

Response to ‘‘Comment on ‘Nonlinear coupling of waveguide modes’ ’’ [Appl. Phys. Lett. 51, 1645 (1987)]

Silberberg, Yaron, Stegeman, George I.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 296 KB

english, 1987

16

680-nm band GaInP/AlGaInP tapered stripe laser

Ikeda, M., Sato, H., Ohata, T., Nakano, K., Toda, A., Kumagai, O., Kojima, C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 420 KB

english, 1987

17

Comment on ‘‘Nonlinear coupling of waveguide modes’’ [Appl. Phys. Lett. 50, 801 (1987)]

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 294 KB

english, 1987

18

Electroabsorption in AlGaAs/GaAs multiple quantum well structures grown on a GaP transparent substrate

Lee, H. C., Dzurko, K. M., Dapkus, P. D., Garmire, E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 542 KB

english, 1987

19

Comment on ‘‘Exact analytical solution to diffusion equation for ion-implanted dopant profile evolution during annealing’’ [Appl. Phys. Lett. 50, 155 (1987)]

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 253 KB

english, 1987

20

Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy

Le Corre, A., Caulet, J., Gauneau, M., Loualiche, S., L’Haridon, H., Lecrosnier, D., Roizes, A., David, J. P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 440 KB

english, 1987

21

Correlation between the elastic and structural properties of thin-film tungsten silicide layers from surface acoustic wave analysis

Crean, G. M., Golanski, A., Oberlin, J. C., Perio, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 472 KB

english, 1987

22

Partial epitaxial growth of cobalt germanides on (111)Ge

Hsieh, Y. F., Chen, L. J., Marshall, E. D., Lau, S. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 618 KB

english, 1987

23

Polarizable capacitance versus voltage characteristics for metal, oxide, and silicon capacitors passivated by various oxide glasses

Kobayashi, Keiji

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 409 KB

english, 1987

24

Realization of both p- and n-type conduction for ZnSe-ZnTe strained-layer superlattices

Kobayashi, Masakazu, Dosho, Shiro, Imai, Akira, Kimura, Ryuhei, Konagai, Makoto, Takahashi, Kiyoshi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 436 KB

english, 1987

25

Assessment of the surface-photovoltage diffusion-length measurement

McElheny, P. J., Arch, J. K., Fonash, S. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 604 KB

english, 1987

26

Stripe-geometry AlxGa1−xAs-GaAs quantum well lasers via hydrogenation

Jackson, G. S., Pan, N., Feng, M. S., Stillman, G. E., Holonyak, N., Burnham, R. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 594 KB

english, 1987

27

Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates

El-Masry, N., Tarn, J. C. L., Humphreys, T. P., Hamaguchi, N., Karam, N. H., Bedair, S. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 562 KB

english, 1987

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