Volume 51; Issue 21

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Applied Physics Letters
Volume 51; Issue 21

Applied Physics Letters

Volume 51; Issue 21

1

Drude parameters of liquid silicon at the melting temperature

Li, K. D., Fauchet, P. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 496 KB

english, 1987

2

Effect of inelastic scattering on resonant and sequential tunneling in double barrier heterostructures

Jonson, M., Grincwajg, Anna

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 638 KB

english, 1987

3

GaAlAs gain-guided semiconductor lasers with a curved facet

Yamashita, S., Nakatsuka, S., Tanaka, T., Ono, Y., Chinone, N., Kajimura, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 547 KB

english, 1987

4

Bright white-light electroluminescence based on nonradiative energy transfer in Ce- and Eu-doped SrS thin films

Tanaka, Shosaku, Yoshiyama, Hideki, Nishiura, Junichi, Ohshio, Shozo, Kawakami, Hiroyuki, Kobayashi, Hiroshi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 575 KB

english, 1987

5

Integrate-and-fire infrared detectors

Coon, D. D., Perera, A. G. U.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 561 KB

english, 1987

6

High-power (1.4 W) AlGaInP graded-index separate confinement heterostructure visible (λ∼658 nm) laser

Bour, D. P., Shealy, J. R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 602 KB

english, 1987

7

Determining height of a leaky Schottky barrier existing in the junction between SnO2 and a highly doped p-type amorphous SiC by using the pulsed laser-induced transient photopotential technique

Itoh, Kiminori, Matsumoto, Hidetoshi, Kobata, Tsuyoshi, Fujishima, Akira, Nakamura, Osamu, Fukui, Keitaro

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 453 KB

english, 1987

8

Dual-wavelength emission from a twin-stripe single quantum well laser

Tokuda, Yasunori, Abe, Yuji, Matsui, Teruhito, Tsukada, Noriaki, Nakayama, Takashi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 559 KB

english, 1987

9

Nonlinear effects in coplanar GaAs/InGaAs strained-layer superlattice directional couplers

Das, Utpal, Chen, Yi, Bhattacharya, Pallab

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 513 KB

english, 1987

10

Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure

Ogura, Mutsuo, Hsin, Wei, Wu, Ming-Chiang, Wang, Shyh, Whinnery, John R., Wang, S. C., Yang, Jane J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 649 KB

english, 1987

11

Effect of substrate surface structure on nucleation of GaAs on Si(100)

Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S. M., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 776 KB

english, 1987

12

Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy

Tsang, J. C., Iyer, S. S., Delage, S. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 660 KB

english, 1987

13

Intersubband transitions in GaAs-AlxGa1−xAs modulation-doped superlattices

Nakayama, M., Kuwahara, H., Kato, H., Kubota, K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 604 KB

english, 1987

14

Charge trapping in thin nitrided SiO2 films

Severi, Maurizio, Impronta, Maurizio

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 512 KB

english, 1987

15

Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser

Koren, U., Miller, B. I., Su, Y. K., Koch, T. L., Bowers, J. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 487 KB

english, 1987

16

Nanometer-scale columns in GaAs fabricated by angled chlorine ion-beam-assisted etching

Goodhue, W. D., Pang, S. W., Johnson, G. D., Astolfi, D. K., Ehrlich, D. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 587 KB

english, 1987

17

X-ray photoemission study of the Te-precursor surfaces and the initial stages of growth of ZnTe on GaAs (100)

Tatarenko, S., Saminadayar, K., Cibert, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 516 KB

english, 1987

18

Microscopic origin of light-induced changes in hydrogenated amorphous silicon

Jang, Jin, Lee, Chang Geun, Park, Seung Chul, Lee, Choochon

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 555 KB

english, 1987

19

Mechanism of alkali-promoted oxidation of silicon

Asensio, M. C., Michel, E. G., Oellig, E. M., Miranda, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 577 KB

english, 1987

20

High mobility, selectively doped InP/GaInAs grown by organometallic vapor phase epitaxy

Aina, Leye, Mattingly, M., Potter, Bob

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 403 KB

english, 1987

21

Maximum thickness of amorphous NiZr interlayers formed by a solid-state reaction technique

Meng, W. J., Nieh, C. W., Johnson, W. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 642 KB

english, 1987

22

Linear polarization effects in anisotropic photoemission from GaAs/AlAs short-period superlattices

Fujiwara, K., Tsukada, N., Nakayama, T., Nishino, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 589 KB

english, 1987

23

Titanium-oxygen reaction at the Ti/La1.85Sr0.15CuO4 interface

Meyer, H. M., Hill, D. M., Anderson, Steven G., Weaver, J. H., Capone, D. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 623 KB

english, 1987

24

Diffraction effects in a diode array traveling-wave amplifier

Andrews, John R., Paoli, T. L., Burnham, R. D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 592 KB

english, 1987

25

Differential amplitude contrast in acoustic microscopy

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 504 KB

english, 1987

26

Efficient degenerate four-wave mixing in an ion-exchanged semiconductor-doped glass waveguide

Gabel, A., DeLong, K. W., Seaton, C. T., Stegeman, G. I.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 497 KB

english, 1987

27

Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy on 0.5°-misoriented (111)B substrates

Hayakawa, T., Kondo, M., Morita, T., Takahashi, K., Suyama, T., Yamamoto, S., Hijikata, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 536 KB

english, 1987

28

Electroreflectance and photoluminescence studies of (AlxGa1−x)1−zInzPyAs1−y lattice matched to GaAs

Asami, K., Okuno, T., Emura, S., Gonda, S., Mukai, S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 612 KB

english, 1987

29

Identification of the titanium-related levels in GaP

Roura, P., Bremond, G., Nouailhat, A., Guillot, G., Ulrici, W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 565 KB

english, 1987

30

Ballistic peaks in the distribution function from intervalley transfer in a submicron structure

Baranger, Harold U., Pelouard, Jean-Luc, Po^ne, Jean-François, Castagné, René

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 678 KB

english, 1987

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