Volume 51; Issue 23

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Applied Physics Letters
Volume 51; Issue 23

Applied Physics Letters

Volume 51; Issue 23

1

Interface roughness scattering in GaAs/AlAs quantum wells

Sakaki, H., Noda, T., Hirakawa, K., Tanaka, M., Matsusue, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 578 KB

english, 1987

2

Highly efficient Nd:YVO4 diode-laser end-pumped laser

Fields, R. A., Birnbaum, M., Fincher, C. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 477 KB

english, 1987

3

Time-resolved direct observation of Auger recombination in semiconductor-doped glasses

Roussignol, P., Kull, M., Ricard, D., de Rougemont, F., Frey, R., Flytzanis, C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 676 KB

english, 1987

4

Magnetron sputtering and laser patterning of high transition temperature Cu oxide films

Scheuermann, M., Chi, C. C., Tsuei, C. C., Yee, D. S., Cuomo, J. J., Laibowitz, R. B., Koch, R. H., Braren, B., Srinivasan, R., Plechaty, M. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 634 KB

english, 1987

5

Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes

Nishioka, Takashi, Itoh, Yoshio, Yamamoto, Akio, Yamaguchi, Masafumi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 677 KB

english, 1987

6

Initial stages of the ion beam mixing process

Traverse, A., Le Boité, M. G., Névot, L., Pardo, B., Corno, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 575 KB

english, 1987

7

Use of the Meissner effect to separate, purify, and classify superconducting powders

Barsoum, Michel, Patten, Daniel, Tyagi, Somdev

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 608 KB

english, 1987

8

Degradation in GaAs/AlGaAs double-heterostructure light-emitting diodes

Ogawa, Junko, Tamamura, Kohshi, Akimoto, Katsuhiro, Mori, Yoshifumi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 501 KB

english, 1987

9

Role of atomic tellurium in the growth kinetics of CdTe (111) homoepitaxy

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 562 KB

english, 1987

10

Thermoelastic surface deformation—time evolution

Tankovsky, N. S., Mitev, A. P., Kebedjiev, A. G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 507 KB

english, 1987

11

Hydrogenated amorphous silicon prepared by ArF and F2 excimer laser-induced photochemical vapor deposition

Toyoshima, Yasutake, Kumata, Ken, Itoh, Uichi, Matsuda, Akihisa

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 589 KB

english, 1987

12

Phonon shifts and strains in strain-layered (Ga1−xInx)As

Burns, Gerald, Wie, C. R., Dacol, F. H., Pettit, G. D., Woodall, J. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 551 KB

english, 1987

13

Highly oriented polydiacetylene films by vacuum deposition

Kanetake, Tatsuo, Ishikawa, Ken, Koda, Takao, Tokura, Yoshinori, Takeda, Kenji

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 568 KB

english, 1987

14

Rapid lattice expansion and increased x-ray reflectivity of a multilayer structure due to pulsed laser heating

Zigler, A., Underwood, J. H., Zhu, J., Falcone, R. W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 533 KB

english, 1987

15

Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy

Kobayashi, N., Benchimol, J. L., Alexandre, F., Gao, Y.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 546 KB

english, 1987

16

Theoretical formalism to understand the role of strain in the tailoring of hole masses in p-type InxGa1−xAs (on GaAs substrates) and In0.53+xGa0.47−xAs (on InP substrates) modulation-doped field-effect transistors

Jaffe, Mark, Sekiguchi, Yoshihiko, Singh, Jasprit

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 559 KB

english, 1987

17

New method of characterizing majority and minority carriers in semiconductors

Leslie-Pelecky, D. L., Seiler, D. G., Loloee, M. R., Littler, C. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 542 KB

english, 1987

18

Simultaneous delivery of neodymium:yttrium aluminum garnet and CO laser beams by a single As-S glass fiber

Arai, Tsunenori, Kikuchi, Makoto, Saito, Mitsunori, Takizawa, Masaya

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 388 KB

english, 1987

19

Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane

Baert, K., Symons, J., Vandervorst, W., Vanhellemont, J., Caymax, M., Poortmans, J., Nijs, J., Mertens, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 530 KB

english, 1987

20

Modulation of light by an electrically tunable multilayer interference filter

Yoffe, G. W., Schlom, D. G., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 467 KB

english, 1987

21

Radiation induced interface states in metal-aluminosilicate (Al2O3⋅SiO2) insulator-Si capacitors

Ishida, Makoto, Sakamoto, Hikaru, Shirotori, Haruo, Nakamura, Tetsuro

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 535 KB

english, 1987

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