Volume 51; Issue 24

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Applied Physics Letters
Volume 51; Issue 24

Applied Physics Letters

Volume 51; Issue 24

1

20.2% efficiency Al0.4Ga0.6As/GaAs tandem solar cells grown by molecular beam epitaxy

Amano, Chikara, Sugiura, Hideo, Yamamoto, Akio, Yamaguchi, Masafumi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 525 KB

english, 1987

2

Ordering in GaAs1âxSbx grown by molecular beam epitaxy

Ihm, Yeong-Eon, Otsuka, N., Klem, J., MorkocÌ§, H.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 695 KB

english, 1987

3

Green infrared-pumped erbium upconversion laser

Silversmith, A. J., Lenth, W., Macfarlane, R. M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 739 KB

english, 1987

4

Influence of the beam spot size on ablation rates in pulsed-laser processing

Eyett, M., Bäuerle, D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 522 KB

english, 1987

5

Diffusion coefficients and activation energies for Zn diffusion into undoped and S-doped InP

Marek, H. S., Serreze, H. B.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 674 KB

english, 1987

6

Modulated laser beam relaxation spectrometry of laser-induced chemical vapor deposition

Comita, Paul B., Kodas, Toivo T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 590 KB

english, 1987

7

Strain-induced In incorporation coefficient variation in the growth of Al1−xInxAs alloys by molecular beam epitaxy

Turco, F., Massies, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 573 KB

english, 1987

8

Raman scattering studies of ion beam induced mixing at the amorphous germanium/crystalline silicon interface

Kshirsagar, S. T., Rajarshi, S. V., Dusane, R. O., Vaidya, Jayashri, Bhide, V. G.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 664 KB

english, 1987

9

Effects of passivating ionic films on the photoluminescence properties of GaAs

Skromme, B. J., Sandroff, C. J., Yablonovitch, E., Gmitter, T.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 628 KB

english, 1987

10

Precision of series-array Josephson voltage standards

Kautz, R. L., Lloyd, Frances L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 687 KB

english, 1987

11

Structure and magnetic properties of the dilute magnetic semiconductor Mn:CuInTe2

Lin, L.-J., Wernick, J. H., Tabatabaie, N., Hull, G. W., Meagher, B.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 526 KB

english, 1987

12

Characteristics of annealed p/n junctions between GaAs and Si (100)

Unlu, M. S., Munns, G., Chen, J., Won, T., Unlu, H., Morkoç, H., Radhakrishnan, G., Katz, J., Verret, D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 520 KB

english, 1987

13

Optical polarization bistability with high switching speed in a TM wave injected buried heterostructure laser

Mori, Yoshihiro, Shibata, Jun, Kajiwara, Takao

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 547 KB

english, 1987

14

Response to ‘‘Comment on ‘Diffusion model for the laser oxidation of metallic samples in air’ ’’ [Appl. Phys. Lett. 51, 2062 (1987)]

Ursu, I., Nanu, L., Mihailescu, I. N.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 397 KB

english, 1987

15

Raman scattering from AlGaInP

Kondow, Masahiko, Minagawa, Shigekazu, Satoh, Shin

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 453 KB

english, 1987

16

Metalorganic vapor phase epitaxial growth for buried heterostructure GaAlAs lasers with semi-insulating blocking layers

Okayasu, Masanobu, Kozen, Atsuo, Hasumi, Yuji, Temmyo, Jiro, Uehara, Shingo

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 519 KB

english, 1987

17

Hard magnetic properties of R-Fe-Ti alloys

Hadjipanayis, G. C., Aly, S. H., Cheng, Shu-Fan

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 428 KB

english, 1987

18

Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition

Choi, C.-H., Harper, R. A., Yapsir, A. S., Lu, T.-M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 559 KB

english, 1987

19

Comment on ‘‘Diffusion model for the laser oxidation of metallic samples in air’’ [Appl. Phys. Lett. 49, 109 (1987)]

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 310 KB

english, 1987

20

Deep levels associated with vacancy-impurity complexes in GaAs

Shen, Yu-Tang, Myles, Charles W.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 584 KB

english, 1987

21

Optical detection in thin granular films of Y-Ba-Cu-O at temperatures between 4.2 and 100 K

Leung, M., Broussard, P. R., Claassen, J. H., Osofsky, M., Wolf, S. A., Strom, U.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 424 KB

english, 1987

22

Xenon excited state density measurements in electron beam pumped XeCl laser mixtures

Kannari, F., Kimura, W. D., Seamans, J. F., Guyer, Dean R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 580 KB

english, 1987

23

Gallium arsenide field-effect transistor by close spaced vapor transport epitaxy

Mimila-Arroyo, J., Castanedo, R., Chávez, F., González, R., Navarro, G., Reynoso, A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 660 KB

english, 1987

24

Energy requirements in communication

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 611 KB

english, 1987

25

Laser etching of metals in neutral salt solutions

Datta, M., Romankiw, L. T., Vigliotti, D. R., von Gutfeld, R. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 617 KB

english, 1987

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