Volume 51; Issue 26

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Applied Physics Letters
Volume 51; Issue 26

Applied Physics Letters

Volume 51; Issue 26

1

Extreme selectivity in the lift-off of epitaxial GaAs films

Yablonovitch, Eli, Gmitter, T., Harbison, J. P., Bhat, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 640 KB

english, 1987

2

Laser writing of copper lines from metalorganic films

Gupta, A., Jagannathan, R.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 636 KB

english, 1987

3

Thermal resistance at interfaces

Swartz, E. T., Pohl, R. O.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 602 KB

english, 1987

4

Plasmon-phonon-assisted electron-hole recombination in silicon at high laser fluence

Rasolt, Mark, Malvezzi, Andrea Marco, Kurz, Heinz

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 608 KB

english, 1987

5

Gas source silicon molecular beam epitaxy using silane

Hirayama, Hiroyuki, Tatsumi, Toru, Ogura, Atsushi, Aizaki, Naoaki

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 685 KB

english, 1987

6

Influence of an intentional substrate misorientation on deep electron traps in AlGaAs grown by molecular beam epitaxy

Radulescu, D. C., Schaff, W. J., Wicks, G. W., Calawa, A. R., Eastman, L. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 560 KB

english, 1987

7

InGaAsP/InP high-power semi-insulating blocked planar buried-heterostructure lasers grown entirely by atmospheric organometallic vapor phase epitaxy

Miller, B. I., Koren, U., Capik, R. J., Su, Y. K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 598 KB

english, 1987

8

HgCdTe photovoltaic detectors on Si substrates

Kay, R., Bean, R., Zanio, K., Ito, C., McIntyre, D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 470 KB

english, 1987

9

Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions

Chow, D. H., McCaldin, J. O., Bonnefoi, A. R., McGill, T. C., Sou, I. K., Faurie, J. P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 658 KB

english, 1987

10

Heteroepitaxial growth of Cd1−xMnxTe on GaAs by metalorganic chemical vapor deposition

Nouhi, Akbar, Stirn, Richard J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 676 KB

english, 1987

11

Photoelectromagnetic effect in p-type HgCdTe layers grown by liquid phase epitaxy

Mordowicz, D., Zemel, A., Zussman, A., Eger, D., Goldstein, Y.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 508 KB

english, 1987

12

Evidence of the role of defects near the injecting interface in determining SiO2 breakdown

Olivo, P., Ricco, B., Nguyen, Thao N., Kuan, T. S., Jeng, S. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 701 KB

english, 1987

13

One-step two-level etching technique for monolithic integrated optics

Grande, W. J., Braddock, W. D., Shealy, J. R., Tang, C. L.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 680 KB

english, 1987

14

Neutron production from a shell-confined carbon-deuterium plasma by 1.06 μm laser irradiation

Daido, Hiroyuki, Yamanaka, Masanobu, Mima, Kunioki, Nishihara, Katsunobu, Nakai, Sadao, Kitagawa, Yoneyoshi, Miura, Eisuke, Yamanaka, Chiyoe, Hasegawa, Akira

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 531 KB

english, 1987

15

Generation of blue cw coherent radiation by sum frequency mixing in KTiOPO4

Baumert, J.-C., Schellenberg, F. M., Lenth, W., Risk, W. P., Bjorklund, G. C.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 631 KB

english, 1987

16

Formation of buried layers of β-SiC using ion beam synthesis and incoherent lamp annealing

Reeson, K. J., Hemment, P. L. F., Stoemenos, J., Davis, J., Celler, G. E.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 564 KB

english, 1987

17

Observation of electroluminescence of ZnS:TbF3 under various gaseous atmospheres

Arakawa, Tsuyoshi, Suezawa, Nobuya, Adachi, Gin-ya, Shiokawa, Jiro

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 448 KB

english, 1987

18

Promethium-doped phosphate glass laser at 933 and 1098 nm

Krupke, W. F., Shinn, M. D., Kirchoff, T. A., Finch, C. B., Boatner, L. A.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 485 KB

english, 1987

19

Negative photoconductivity in high electron mobility transistors

Chang, C. S., Fetterman, H. R., Ni, D., Sovero, E., Mathur, B., Ho, W. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 492 KB

english, 1987

20

Interaction between radiation-induced defects and the Pt-related center in silicon

Weng, Y. M., Ohta, E., Sakata, M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 433 KB

english, 1987

21

Interface states in Bi/Bi1−xSbx heterojunctions

Agassi, D., Chu, T. K.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 554 KB

english, 1987

22

Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devices

Cooper, C. B., Salimian, S., MacMillan, H. F.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 467 KB

english, 1987

23

Low-temperature process for the preparation of high Tc superconducting thin films

Adachi, Hideaki, Hirochi, Kumiko, Setsune, Kentaro, Kitabatake, Makoto, Wasa, Kiyotaka

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 583 KB

english, 1987

24

Aerosol jet etching of fine patterns

Chen, Y. L., Brock, J. R., Trachtenberg, I.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 624 KB

english, 1987

25

Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition

Razeghi, M., Maurel, Ph., Omnes, F., Nagle, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 575 KB

english, 1987

26

Stress variations due to microcracks in GaAs grown on Si

Yacobi, B. G., Zemon, S., Norris, P., Jagannath, C., Sheldon, P.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 632 KB

english, 1987

27

Large third-order optical nonlinearity of the organic metal α-[bis(ethylenedithio) tetrathiofulvalene] triiodide

Huggard, P. G., Blau, W., Schweitzer, D.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 543 KB

english, 1987

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