Volume 51; Issue 5

Applied Physics Letters

Volume 51; Issue 5
3

Point defect generation and enhanced diffusion in silicon due to tantalum silicide overlays

Year:
1987
Language:
english
File:
PDF, 619 KB
english, 1987
5

Ohmic contacts to n-GaAs using In/Pd metallization

Year:
1987
Language:
english
File:
PDF, 446 KB
english, 1987
6

Role of Hg in junction formation in ion-implanted HgCdTe

Year:
1987
Language:
english
File:
PDF, 614 KB
english, 1987
9

Lattice relaxation of pressure-induced deep centers in GaAs:Si

Year:
1987
Language:
english
File:
PDF, 610 KB
english, 1987
12

Rapid thermal oxidation of silicon monoxide

Year:
1987
Language:
english
File:
PDF, 528 KB
english, 1987
14

Enhancement of quantum confined Stark effect in a graded gap quantum well

Year:
1987
Language:
english
File:
PDF, 490 KB
english, 1987
16

Epitaxial growth quality optimization by supercomputer

Year:
1987
Language:
english
File:
PDF, 560 KB
english, 1987
19

Dynamic consolidation of diamond powder into polycrystalline diamond

Year:
1987
Language:
english
File:
PDF, 553 KB
english, 1987
21

Superconducting thin films based on La2−xSrxCuO4

Year:
1987
Language:
english
File:
PDF, 414 KB
english, 1987
22

Epitaxial yttrium silicide on (111) silicon by vacuum annealing

Year:
1987
Language:
english
File:
PDF, 454 KB
english, 1987