Volume 52; Issue 13

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Applied Physics Letters
Volume 52; Issue 13

Applied Physics Letters

Volume 52; Issue 13

1

High‐resolution capacitance measurement and potentiometry by force microscopy

Martin, Yves, Abraham, David W., Wickramasinghe, H. Kumar

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 609 KB

english, 1988

2

Excitonic trapping from atomic layer epitaxial ZnTe within ZnSe/(Zn,Mn)Se heterostructures

Kolodziejski, L. A., Gunshor, R. L., Fu, Q., Lee, D., Nurmikko, A. V., Gonsalves, J. M., Otsuka, N.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 761 KB

english, 1988

3

Laser action in chromium-doped forsterite

PetricÌevicÌ, V., Gayen, S. K., Alfano, R. R., Yamagishi, Kiyoshi, Anzai, H., Yamaguchi, Y.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 514 KB

english, 1988

4

Surface-superlattice effects in a grating-gate GaAs/GaAlAs modulation doped field-effect transistor

Ismail, K., Chu, W., Antoniadis, D. A., Smith, Henry I.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 519 KB

english, 1988

5

Poled electro-optic waveguide formation in thin-film organic media

Thackara, J. I., Lipscomb, G. F., Stiller, M. A., Ticknor, A. J., Lytel, R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 662 KB

english, 1988

6

Twin formation and Au segregation during ion-beam-induced epitaxy of amorphous Si

Priolo, F., Batstone, J. L., Poate, J. M., Linnros, J., Jacobson, D. C., Thompson, Michael O.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 673 KB

english, 1988

7

Growth of highly oriented CdS thin films by laser-evaporation deposition

Kwok, H. S., Zheng, J. P., Witanachchi, S., Mattocks, P., Shi, L., Ying, Q. Y., Wang, X. W., Shaw, D. T.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 594 KB

english, 1988

8

Laser-assisted metalorganic molecular beam epitaxy of GaAs

Donnelly, V. M., Tu, C. W., Beggy, J. C., McCrary, V. R., Lamont, M. G., Harris, T. D., Baiocchi, F. A., Farrow, R. C.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 662 KB

english, 1988

9

Row-backlight, column-shutter display concept

Nelson, T. J., Patel, J. S., Ngo, P. D. T.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 584 KB

english, 1988

10

Electric properties of the YBa2Cu3O7−δ/Au interface

Mizushima, K., Sagoi, M., Miura, T., Yoshida, J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 396 KB

english, 1988

11

In situ preparation of Y-Ba-Cu-O superconducting thin films by magnetron sputtering

Li, H. C., Linker, G., Ratzel, F., Smithey, R., Geerk, J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 553 KB

english, 1988

12

Wear reduction of glassy carbon by Li implantation

Yoshida, Kazuo, Takahashi, Katsuo, Okuno, Kazuhiko, Katagiri, Gen, Iwaki, Masaya, Ishitani, Akira

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 431 KB

english, 1988

13

GexSi1−x strained-layer heterostructure bipolar transistors

Temkin, H., Bean, J. C., Antreasyan, A., Leibenguth, R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 495 KB

english, 1988

14

Photorefractive imaging of semiconductor wafers

Bylsma, R. B., Olson, D. H., Glass, A. M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 661 KB

english, 1988

15

Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy

Shayegan, M., Goldman, V. J., Jiang, C., Sajoto, T., Santos, M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 605 KB

english, 1988

16

Low-temperature epitaxial growth of silicon by low-pressure chemical vapor deposition

Meakin, D., Stobbs, M., Stoemenos, J., Economou, N. A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 586 KB

english, 1988

17

Evidence of a photon effect during the visible laser-assisted deposition of polycrystalline silicon from silane

Auvert, G., Tonneau, D., Pauleau, Y.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 589 KB

english, 1988

18

Hall effect in amorphous Si:H and amorphous Si:H/amorphous Ge:H superlattices

Sichel, E. K., Greber, L., Wang, K.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 488 KB

english, 1988

19

Chemical vapor deposition of a silicon nitride layer with an excellent interface by NH3 plasma treatment

Shimoda, Sugirou, Shimizu, Isamu, Migitaka, Masatoshi

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 410 KB

english, 1988

20

Investigation of point-defect generation in silicon during oxidation of a deposited WSi2 layer

Fahey, P., Dutton, R. W.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 545 KB

english, 1988

21

Efficient, high-power (>150 mW) grating surface emitting lasers

Evans, G. A., Carlson, N. W., Hammer, J. M., Lurie, M., Butler, J. K., Carr, L. A., Hawrylo, F. Z., James, E. A., Kaiser, C. J., Kirk, J. B., Reichert, W. F., Chinn, S. R., Shealy, J. R., Zory, P. S.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 560 KB

english, 1988

22

Electron beam oxidation of semiconductors (one mechanism of electron beam processes)

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 532 KB

english, 1988

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