Volume 52; Issue 17

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Applied Physics Letters
Volume 52; Issue 17

Applied Physics Letters

Volume 52; Issue 17

1

Microwave phase stability of directly modulated semiconductor injection lasers

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 493 KB

english, 1988

2

Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering

Epler, J. E., Thornton, R. L., Paoli, T. L.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 622 KB

english, 1988

3

Disordering of InGaAs-InP quantum wells by Si implantation

Tell, B., Johnson, B. C., Zyskind, J. L., Brown, J. M., Sulhoff, J. W., Brown-Goebeler, K. F., Miller, B. I., Koren, U.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 597 KB

english, 1988

4

Effect of boron incorporation on the light-induced effect in amorphous silicon solar cells

Jang, Jin, Lee, Yi Sang

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 576 KB

english, 1988

5

Relationship between hole trapping and interface state generation in metal-oxide-silicon structures

Wang, S. J., Sung, J. M., Lyon, S. A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 680 KB

english, 1988

6

Large aperture point-focusing diffractor for x rays

Wittry, D. B., Golijanin, D. M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 546 KB

english, 1988

7

Band gap and activation energy in amorphous silicon doping-modulated superlattices

Zhang, D. H., Haneman, D.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 588 KB

english, 1988

8

Zn-diffusion-induced intermixing of InGaAs/InP multiple quantum well structures

Nakashima, Kiichi, Kawaguchi, Yoshihiro, Kawamura, Yuichi, Imamura, Yoshihiro, Asahi, Hajime

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 548 KB

english, 1988

9

High-frequency characterization of thin-film Y-Ba-Cu oxide superconducting transmission lines

Dykaar, Douglas R., Sobolewski, Roman, Chwalek, James M., Whitaker, John F., Hsiang, Thomas Y., Mourou, Gerard A., Lathrop, Daniel K., Russek, Stephen E., Buhrman, Robert A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 518 KB

english, 1988

10

Excimer laser-assisted metalorganic vapor phase epitaxy of CdTe on GaAs

Zinck, J. J., Brewer, P. D., Jensen, J. E., Olson, G. L., Tutt, L. W.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 517 KB

english, 1988

11

Study of oxygen transport in Ba2YCu3O7−δ using a solid-state electrochemical cell

O’Sullivan, Eugene J. M., Chang, Bertha P.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 570 KB

english, 1988

12

Release of As from SiO2 by a temperature gradient and formation of buried n+ conductive layers in Si-on-SiO2 structures

Celler, G. K., Trimble, L. E.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 587 KB

english, 1988

13

Thickness dependence of strains in strained-layer superlattices

Shahzad, K., Olego, D. J., Cammack, D. A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 534 KB

english, 1988

14

GaAs semiconductor-insulator-semiconductor field-effect transistor with a planar-doped barrier gate

Figueredo, Domingo A., Zurakowski, Mark P., Elliott, Scott S., Anklam, William J., Sloan, Susan R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 556 KB

english, 1988

15

Enhancement of transport critical current density by Gd substitution in YBa2Cu3O7

Sastry, P. V. P. S. S., Gopalakrishnan, I. K., Yakhmi, J. V., Iyer, R. M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 389 KB

english, 1988

16

Symmetric self-electro-optic effect device: Optical set-reset latch

Lentine, A. L., Hinton, H. S., Miller, D. A. B., Henry, J. E., Cunningham, J. E., Chirovsky, L. M. F.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 632 KB

english, 1988

17

Room-temperature observation of resonant tunneling through an AlGaAs/GaAs quasiparabolic quantum well grown by molecular beam epitaxy

Chou, S. Y., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 498 KB

english, 1988

18

Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high-quality GaAs on (100) Si substrates

Lo, Y. H., Wu, M. C., Lee, H., Wang, S., Liliental-Weber, Z.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 505 KB

english, 1988

19

Multiple quantum well AlGaAs/GaAs field-effect transistor structures for power applications

Daembkes, Heinrich, Weimann, Günter

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 475 KB

english, 1988

20

Light-induced degradation at the silicon/silicon dioxide interface

Gruenbaum, P. E., Sinton, R. A., Swanson, R. M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 455 KB

english, 1988

21

Effects of deposition temperature of insulator films on the electrical characteristics of InP metal-insulator-semiconductor field-effect transistors

Iwase, Y., Arai, F., Sugano, T.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 427 KB

english, 1988

22

Impurity-induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures

Deppe, D. G., Nam, D. W., Holonyak, N., Hsieh, K. C., Baker, J. E., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 610 KB

english, 1988

23

1.06–0.53 μm second harmonic generation using congruent lithium niobate

Ammann, E. O., Guch, S.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 573 KB

english, 1988

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