Volume 52; Issue 19

Applied Physics Letters

Volume 52; Issue 19
4

GaAs heteroepitaxial growth on Si for solar cells

Year:
1988
Language:
english
File:
PDF, 508 KB
english, 1988
6

Quantum interference effects in GaAs/GaAlAs bulk potential barriers

Year:
1988
Language:
english
File:
PDF, 530 KB
english, 1988
12

Self-aligned diffusion barrier by nitridation of TiSi2

Year:
1988
Language:
english
File:
PDF, 601 KB
english, 1988
14

Prediction of a large polar Kerr angle in NiUSn

Year:
1988
Language:
english
File:
PDF, 534 KB
english, 1988
17

Phase locking of Josephson junction arrays

Year:
1988
Language:
english
File:
PDF, 471 KB
english, 1988
20

Increased XeF(B→X) laser efficiency at high pump rate and elevated temperature

Year:
1988
Language:
english
File:
PDF, 473 KB
english, 1988
21

rf break-junction SQUID’s at 77 K

Year:
1988
Language:
english
File:
PDF, 385 KB
english, 1988
24

Optoelectronic bistability in gallium phosphide

Year:
1988
Language:
english
File:
PDF, 496 KB
english, 1988
27

Composition dependence of viscosity for molten Ga1−xAsx (0.0≤x≤0.53)

Year:
1988
Language:
english
File:
PDF, 425 KB
english, 1988
28

Germanium blocked-impurity-band far-infrared detectors

Year:
1988
Language:
english
File:
PDF, 560 KB
english, 1988
29

Control of epitaxial orientation of Si on CoSi2(111)

Year:
1988
Language:
english
File:
PDF, 677 KB
english, 1988