Volume 52; Issue 26

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Applied Physics Letters
Volume 52; Issue 26

Applied Physics Letters

Volume 52; Issue 26

1

Room-temperature copper metallization for ultralarge-scale integrated circuits by a low kinetic-energy particle process

Ohmi, T., Saito, T., Shibata, T., Nitta, T.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 505 KB

english, 1988

2

Anomalous rf magnetoresistance in copper at 4 K

Rogers, J. T., De Panfilis, S., Melissinos, A. C., Moskowitz, B. E., Semertzidis, Y. K., Wuensch, W. U., Halama, H. J., Prodell, A. G., Fowler, W. B., Nezrick, F. A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 603 KB

english, 1988

3

Fabrication of multifilamentary Y-Ba-Cu-O oxide superconductors

Sekine, H., Inoue, K., Maeda, H., Numata, K., Mori, K., Yamamoto, H.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 535 KB

english, 1988

4

Probing of basal planes of MoS2 by scanning tunneling microscopy

Sarid, Dror, Henson, Tammy D., Armstrong, Neal R., Bell, L. Stephen

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 606 KB

english, 1988

5

GaAs/AlAs double-barrier resonant tunneling structure on Si with large peak to valley ratio at room temperature

Kan, S. C., Morkoç, H., Yariv, A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 492 KB

english, 1988

6

Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions

de Lyon, T. J., Casey, H. C., Massoud, H. Z., Timmons, M. L., Hutchby, J. A., Dietrich, H. B.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 608 KB

english, 1988

7

Diffuse discharge interruption induced by excimer lasers in a pure N2 gas

Sasagawa, Teruo, Kawahara, Akihiro, Obara, Minoru

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 594 KB

english, 1988

8

Deep states and misfit dislocations in indium-doped GaAs layers grown by molecular beam epitaxy

Ioannou, D. E., Huang, Y. J., Iliadis, A. A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 598 KB

english, 1988

9

Comment on ‘‘Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)’’ [Appl. Phys. Lett. 50, 1257 (1987)]

d’Heurle, F. M., Thomas, O.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 338 KB

english, 1988

10

Selective growth condition in disilane gas source silicon molecular beam epitaxy

Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 486 KB

english, 1988

11

Effects of heavy impurity doping on electron injection in p+-n GaAs diodes

Klausmeier-Brown, M. E., Lundstrom, M. S., Melloch, M. R., Tobin, S. P.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 552 KB

english, 1988

12

Real-time technique for the characterization of tunable single-frequency lasers

Strzelecki, E. M., Cohen, D. A., Corzine, S. W., Karin, J. R., Coldren, L. A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 518 KB

english, 1988

13

Solid phase recrystallization of implanted III-V semiconductors under uniaxial stress

Licoppe, C., Savary, H., Allovon, M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 646 KB

english, 1988

14

Ultrahigh power 38 W continuous-wave monolithic laser diode arrays

Sakamoto, M., Welch, D. F., Harnagel, G. L., Streifer, W., Kung, H., Scifres, D. R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 348 KB

english, 1988

15

Extreme nonequilibrium electron transport in heterojunction bipolar transistors

Berthold, K., Levi, A. F. J., Walker, J., Malik, R. J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 464 KB

english, 1988

16

n-Si/p-Si1−xGex/n-Si double-heterojunction bipolar transistors

Xu, Dan-Xia, Shen, Guang-Di, Willander, M., Ni, Wei-Xin, Hansson, G. V.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 511 KB

english, 1988

17

AlGaAs graded index lens for integrated optics

Yoshida, I., Bedair, S. M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 479 KB

english, 1988

18

Chemical precursor to optical damage detected by laser ionization mass spectrometry

Estler, R. C., Nogar, N. S.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 575 KB

english, 1988

19

Efficient narrow-band direct modulation of semiconductor injection lasers at millimeter wave frequencies of 100 GHz and beyond

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 555 KB

english, 1988

20

High Tc YBa2Cu3O7−x thin films on Si substrates by dc magnetron sputtering from a stoichiometric oxide target

Lee, W. Y., Salem, J., Lee, V., Huang, T., Savoy, R., Deline, V., Duran, J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 485 KB

english, 1988

21

Light emission from CH and H sputtered from hydrogen-implanted graphite

Klekamp, A., Möller, W., Snowdon, K. J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 404 KB

english, 1988

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