Volume 52; Issue 6

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Applied Physics Letters
Volume 52; Issue 6

Applied Physics Letters

Volume 52; Issue 6

1

Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs

Larsen, C. A., Buchan, N. I., Stringfellow, G. B.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 590 KB

english, 1988

2

Granular metal films as recording media

Liou, S. H., Chien, C. L.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 595 KB

english, 1988

3

Time‐dependent approach to double‐barrier quantum well oscillators

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 554 KB

english, 1988

4

Improvement of the bulk laser damage threshold of potassium dihydrogen phosphate crystals by reducing the organic impurities in growth solution

Nishida, Y., Yokotani, A., Sasaki, T., Yoshida, K., Yamanaka, T., Yamanaka, C.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 470 KB

english, 1988

5

High rate synthesis of diamond by dc plasma jet chemical vapor deposition

Kurihara, Kazuaki, Sasaki, Kenichi, Kawarada, Motonobu, Koshino, Nagaaki

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 486 KB

english, 1988

6

Impurity-stimulated crystallization and diffusion in amorphous silicon

Nygren, E., Pogany, A. P., Short, K. T., Williams, J. S., Elliman, R. G., Poate, J. M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 627 KB

english, 1988

7

Optical and electronic properties of an amorphous silicon-germanium alloy with a 1.28 eV optical gap

Kolodzey, J., Schwarz, R., Aljishi, S., Chu, V., Shen, D.-S., Fauchet, P. M., Wagner, S.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 549 KB

english, 1988

8

Quantum capacitance devices

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 515 KB

english, 1988

9

Improvements in corrosion resistance of Tb-Fe thin films

Kobayashi, M., Maeno, Y., Oishi, K., Kawamura, K.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 499 KB

english, 1988

10

Real-time image subtraction with the use of wave polarization and phase conjugation

Tomita, Yasuo, Yahalom, Ram, Yariv, Amnon

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 511 KB

english, 1988

11

Materials choice for ballistic transport: Group velocities and mean free paths calculated from realistic band structures

Krishnamurthy, Srinivasan, Sher, A., Chen, A.-B.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 585 KB

english, 1988

12

Long-wavelength photoluminescence of InAs1−xSbx (0

Yen, M. Y., People, R., Wecht, K. W., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 593 KB

english, 1988

13

Modulation of an intense beam by an external microwave source: Theory and simulation

Krall, J., Lau, Y. Y.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 509 KB

english, 1988

14

Critical current enhancement in NbN/AlN multilayers

Murduck, J. M., Capone, D. W., Schuller, Ivan K., Foner, S., Ketterson, J. B.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 569 KB

english, 1988

15

Dye laser frequency locking to the hyperfine structure (3S1/2, F=2−3P1/2, F=2) of sodium D1 line by using polarization spectroscopy

Kim, Jung Bog, Kong, Hong Jin, Lee, Sang Soo

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 526 KB

english, 1988

16

Effects of fluorine ion implantation on metal-oxide-semiconductor devices of silicon-on-sapphire

Zaima, Shigeaki, Yasuda, Yukio, Ito, Masahiro, Nakamura, Tetsuro

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 545 KB

english, 1988

17

Determination of the valence-band offset at a HgTe/CdTe heterojunction by intervalence subband spectroscopy

Yang, Z., Furdyna, J. K.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 600 KB

english, 1988

18

Measurement of thermal diffusivity for polymer film by flash radiometry

Tsutsumi, Naoto, Kiyotsukuri, Tsuyoshi

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 517 KB

english, 1988

19

Phase separation kinetics of metastable, highly supersaturated Sn-Bi single crystals

Fecht, H. J., Tringides, M. C.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 493 KB

english, 1988

20

Anomalous co-diffusion effects of germanium on group III and V dopants in silicon

Pfiester, J. R., Griffin, P. B.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 482 KB

english, 1988

21

Anisotropy dependence of the focused field radiated into a piezoelectric half-space by an interdigital transducer

Zhang, Y. W., Planat, M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 435 KB

english, 1988

22

Strains in Si-on-SiO2 structures formed by oxygen implantation: Raman scattering characterization

Olego, D. J., Baumgart, H., Celler, G. K.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 614 KB

english, 1988

23

Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy

Iyer, S. S., Delage, S. L., Scilla, G. J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 534 KB

english, 1988

24

Erratum: On the relative importance of physical and chemical sputtering during ion-enhanced etching of silicon by XeF2 [Appl. Phys. Lett. 50, 1838 (1987)]

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 211 KB

english, 1988

25

Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantation

Davey, S. T., Davis, J. R., Reeson, K. J., Hemment, P. L. F.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 539 KB

english, 1988

26

Investigations of the quantum photovoltaic effect in InAs-GaSb semiconductor superlattices

Bleuse, J., Voisin, P., Voos, M., Munekata, H., Chang, L. L., Esaki, L.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 517 KB

english, 1988

27

Threshold voltage of charge storage in acoustic-charge-transport devices: Experiments and model

Schmukler, Bruce, Hoskins, Michael J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 564 KB

english, 1988

28

Evidence for photon recycling in InP

Lester, S. D., Kim, T. S., Streetman, B. G.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 581 KB

english, 1988

29

Effects of filament and reactor wall materials in low-pressure chemical vapor deposition synthesis of diamond

Singh, B., Arie, Y., Levine, A. W., Mesker, O. R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 438 KB

english, 1988

30

Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitride

Jousse, D., Kanicki, J., Krick, D. T., Lenahan, P. M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 538 KB

english, 1988

31

Surface-emitting second-harmonic generator for waveguide study

Vakhshoori, D., Wu, M. C., Wang, S.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 559 KB

english, 1988

32

Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room-temperature codeposition technique

d’Anterroches, Cecile, Yakupoglu, H. Nejat, Lin, T. L., Fathauer, R. W., Grunthaner, P. J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 787 KB

english, 1988

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