Volume 52; Issue 8

Main
Applied Physics Letters
Volume 52; Issue 8

Applied Physics Letters

Volume 52; Issue 8

1

Enhanced efficiency in separation of Rb isotopes by light-induced drift with the use of a diode laser with relaxation sidebands

Streater, A. D., Mooibroek, J., Woerdman, J. P.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 618 KB

english, 1988

2

Temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

Blood, P., Colak, S., Kucharska, A. I.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 615 KB

english, 1988

3

Correlation of ââtwinsââ observed by optical microscopy and transmission electron microscopy in YBa2Cu3O7âx superconductors

Hoff, H. A., Singh, A. K., Pande, C. S.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 640 KB

english, 1988

4

Elastic constants of, and Stonely waves in, molybdenum films measured by Brillouin scattering

Bell, J. A., Zanoni, R., Seaton, C. T., Stegeman, G. I., Makous, J., Falco, C. M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 469 KB

english, 1988

5

Magnetic properties of ion-beam-sputtered Fe/Co and Fe/CoFe multilayer films

Senda, Masakatsu, Nagai, Yasuhiro

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 384 KB

english, 1988

6

15% efficiency (1 sun, air mass 1.5), large-area, 1.93 eV AlxGa1−xAs (x=0.37) n-p solar cell grown by metalorganic vapor phase epitaxy

Chung, B-C., Hamaker, H. C., Virshup, G. F., Werthen, J. G.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 571 KB

english, 1988

7

Thermal equilibrium process in undoped hydrogenated amorphous silicon and silicon-carbon alloy films

Xu, Xixiang, Morimoto, Akiharu, Kumeda, Minoru, Shimizu, Tatsuo

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 582 KB

english, 1988

8

Control of pinholes in epitaxial CoSi2 layers on Si(111)

Tung, R. T., Batstone, J. L.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 776 KB

english, 1988

9

Novel method to determine capture cross-section activation energies by deep-level transient spectroscopy techniques

Criado, J., Gomez, A., Calleja, E., Muñoz, E.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 507 KB

english, 1988

10

Large optical nonlinearities in a GaAs/AlGaAs hetero n-i-p-i structure

Kost, A., Garmire, E., Danner, A., Dapkus, P. D.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 546 KB

english, 1988

11

Dose dependence of crystallization in implanted polycrystalline silicon films on SiO2

Iverson, R. B., Reif, R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 630 KB

english, 1988

12

Flash-lamp-triggered high-power thyratron-type switch

Kirkman, G., Hartmann, W., Gundersen, M. A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 712 KB

english, 1988

13

Electron beam source molecular beam epitaxial growth of analog graded AlxGa1−xAs ballistic transistors

Malik, Roger J., Levi, Anthony F. J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 565 KB

english, 1988

14

High-frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy

Chen, H. Z., Paslaski, J., Yariv, A., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 510 KB

english, 1988

15

Resonant tunneling of electrons of one or two degrees of freedom

Chou, S. Y., Wolak, E., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 577 KB

english, 1988

16

Nondestructive technique for the detection of dislocations and stacking faults on silicon wafers

Witowski, Bob, Smith, W. Lee, Willenborg, David L.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 603 KB

english, 1988

17

Electron mobility in p-type GaAs

Nathan, M. I., Dumke, W. P., Wrenner, K., Tiwari, S., Wright, S. L., Jenkins, K. A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 543 KB

english, 1988

18

Model study of the local vibration center related to EL2 levels in GaAs

Zhong, Xuefu, Jiang, Desheng, Ge, Weikun, Song, Chunying

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 544 KB

english, 1988

19

Light-induced defects in hydrogenated amorphous silicon alloys

Skumanich, Andrew, Amer, Nabil M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 421 KB

english, 1988

20

Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111)

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 576 KB

english, 1988

21

Laser-induced degradation of GaAs photoluminescence

Raja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 625 KB

english, 1988

22

Shear-limited flux pinning studied in superconducting thin-film devices

Pruymboom, A., Kes, P. H., van der Drift, E., Radelaar, S.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 560 KB

english, 1988

23

Patterned quantum well semiconductor injection laser grown by molecular beam epitaxy

Kapon, E., Harbison, J. P., Yun, C. P., Stoffel, N. G.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 625 KB

english, 1988

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@1delivery.pm

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски