Volume 53; Issue 1

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Applied Physics Letters
Volume 53; Issue 1

Applied Physics Letters

Volume 53; Issue 1

1

Structure of silicon carbide precipitates in oxygen‐implanted and annealed silicon‐on‐insulator material

Krause, S. J., Jung, C. O., Wilson, S. R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 673 KB

english, 1988

2

Waveguide magneto-optic isolator fabricated by laser annealing

Ando, Koji, Okoshi, Tokio, Koshizuka, Naoki

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 632 KB

english, 1988

3

Analysis of thermal stress-induced grain boundary cavitation and notching in narrow Al-Si metallizations

Li, Che-Yu, Black, Ronald D., LaFontaine, William R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 608 KB

english, 1988

4

Schottky barrier formation on (NH4)2S-treated n- and p-type (100)GaAs

Carpenter, M. S., Melloch, M. R., Dungan, T. E.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 494 KB

english, 1988

5

III-V/II-VI double-barrier resonant tunneling structures

Yu, E. T., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 594 KB

english, 1988

6

Outdiffusion of oxygen and carbon in Czochralski silicon

Shimura, F., Higuchi, T., Hockett, R. S.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 637 KB

english, 1988

7

High-power operation in InGaAs separate confinement heterostructure quantum well laser diodes

Kitamura, M., Takano, S., Sasaki, T., Yamada, H., Mito, I.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 477 KB

english, 1988

8

Magnetophonon effect in GaAs Schottky gate field-effect transistors

Judd, T. P. C., Pepper, M., Hill, G.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 575 KB

english, 1988

9

Work hardening and strain relaxation in strained-layer buffers

Dodson, Brian W.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 498 KB

english, 1988

10

Grain growth of 〈100〉 textured Ge on a SiO2/Si3N4 stripe

Ogura, Atsushi, Aizaki, Naoaki, Terao, Hiroshi

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 556 KB

english, 1988

11

Diffusion coefficient of a pair of nitrogen atoms in float-zone silicon

Itoh, Taizoh, Abe, Takao

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 564 KB

english, 1988

12

Depth profile of vacancy-type defects in B+-implanted Si with a SiO2 overlayer by a variable-energy positron beam

Uedono, A., Tanigawa, S., Sugiura, J., Ogasawara, M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 529 KB

english, 1988

13

Ionic species responsible for the plasma anodization of silicon

Barlow, K. J., Kiermasz, A., Eccleston, W., Moruzzi, J. L.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 536 KB

english, 1988

14

Heteroepitaxy of InSb on silicon by metalorganic magnetron sputtering

Rao, T. Sudersena, Webb, J. B., Houghton, D. C., Baribeau, J. M., Moore, W. T., Noad, J. P.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 595 KB

english, 1988

15

Laser-assisted chemical etching of copper

Ritsko, J. J., Ho, F., Hurst, J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 618 KB

english, 1988

16

Spectroscopic analysis of electronically excited species in XeCl excimer laser-induced plasmas from the ablated high-temperature superconductor YBa2Cu3O7

Auciello, O., Athavale, S., Hankins, O. E., Sito, M., Schreiner, A. F., Biunno, N.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 619 KB

english, 1988

17

Polarization-independent electro-optically tunable narrow-band wavelength filter

Warzanskyj, W., Heismann, F., Alferness, R. C.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 576 KB

english, 1988

18

Self-biasing effects on plasma etching characteristics of Si and SiO2

Cooke, M. J., Pelletier, J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 510 KB

english, 1988

19

Detection of local atomic ordering in high-resolution electron images of quasiamorphous materials

Timsit, R. S., Gallerneault, C., Barry, J. C., Landheer, D.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 743 KB

english, 1988

20

Accuracy of electro-optic measurements of coplanar waveguide transmission lines

Freeman, J. L., Bloom, D. M., Jefferies, S. R., Auld, B. A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 484 KB

english, 1988

21

Boron surface segregation in silicon molecular beam epitaxy

de Frésart, E., Wang, K. L., Rhee, S. S.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 559 KB

english, 1988

22

Ultrasonic imaging with a fixed instrument configuration

Witten, Alan, Tuggle, Joe, Waag, Robert C.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 493 KB

english, 1988

23

Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon

Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A., Rek, Z. U., Stock, S. R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 537 KB

english, 1988

24

Scanning differential optical profilometer for simultaneous measurement of amplitude and phase variation

See, C. W., Appel, R. K., Somekh, M. G.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 490 KB

english, 1988

25

Formation of amorphous Ti alloy layers by excimer laser mixing of Ti on AISI 304 stainless-steel surfaces

Jervis, T. R., Nastasi, M., Zocco, T. G., Martin, J. A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 676 KB

english, 1988

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