Volume 53; Issue 13

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Applied Physics Letters
Volume 53; Issue 13

Applied Physics Letters

Volume 53; Issue 13

1

Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy

Williams, G. M., Whitehouse, C. R., McConville, C. F., Cullis, A. G., Ashley, T., Courtney, S. J., Elliott, C. T.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 648 KB

english, 1988

2

Picosecond switching induced by saturable absorption in a nonlinear directional coupler

Finlayson, N., Banyai, W. C., Wright, E. M., Seaton, C. T., Stegeman, G. I., Cullen, T. J., Ironside, C. N.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 530 KB

english, 1988

3

Real-time observations of hydrogen drift and diffusion in silicon

Seager, C. H., Anderson, R. A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 569 KB

english, 1988

4

Superconducting contacts on YBa2Cu3O7−x in magnetic fields

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 568 KB

english, 1988

5

Scanning electron microscope identification of weak links in superconducting thin films

Monroe, Don, Brocklesby, W. S., Farrow, R. C., Hong, M., Liou, S. H.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 608 KB

english, 1988

6

Equivalent circuit model for active-layer photomixing: Parasitic-free modulation of semiconductor lasers

Vahala, Kerry J., Newkirk, Michael A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 605 KB

english, 1988

7

Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2 discharges

Hultman, L., Johansson, B.-O., Sundgren, J.-E., Markert, L. C., Greene, J. E.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 698 KB

english, 1988

8

Formation of nickel silicides in the Ni/Si3N4/Si system during rapid thermal annealing

Edelman, F., Gutmanas, E. Y., Katz, A., Brener, R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 542 KB

english, 1988

9

Erratum: Temperature dependence of electron mobility and peak velocity in compensated GaAs [Appl. Phys. Lett. 52, 922 (1988)]

Xu, Jingming, Shur, Michael

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 272 KB

english, 1988

10

1.5 μm tunable wavelength filter with wide tuning range and high constant gain using a phase-controlled distributed feedback laser diode

Numai, T., Murata, S., Mito, I.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 464 KB

english, 1988

11

High coupled power 1.3 μm edge-emitting light-emitting diode with a rear window and an integrated absorber

Gen-ei, K., Tanioka, A., Suhara, H., Chinen, K.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 502 KB

english, 1988

12

Composition dependence of superconducting properties in Bi2(Sr1−xCax)n+1CunOy (n=2, 3) thin films

Satoh, T., Yoshitake, T., Kubo, Y., Igarashi, H.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 558 KB

english, 1988

13

Photobias effect in laser-controlled etching of InP

Willner, A. E., Podlesnik, D. V., Gilgen, H. H., Osgood, R. M.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 595 KB

english, 1988

14

Precipitation of group V elements and Ge in SiO2 and their drift in a temperature gradient

Celler, G. K., Trimble, L. E., Sheng, T. T., Kosinski, S. G., West, K. W.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 617 KB

english, 1988

15

Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy

Posthill, J. B., Tarn, J. C. L., Das, K., Humphreys, T. P., Parikh, N. R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 746 KB

english, 1988

16

Unidirectional ring resonator in photorefractive bismuth silicon oxide with two pump beams

Erbschloe, D. R., Solymar, L.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 537 KB

english, 1988

17

Strain and misorientation in GaAs grown on Si(001) by organometallic epitaxy

Ghandhi, S. K., Ayers, J. E.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 545 KB

english, 1988

18

Al0.3Ga0.7As/Al0.05Ga0.95As light-emitting diodes on GaAs-coated Si substrates grown by liquid phase epitaxy

Sakai, Shiro, Chang, Shi S., Ramaswamy, Ramu V., Kim, Jae-Hoon, Radhakrishnan, Gouri, Liu, John K., Katz, Joseph

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 582 KB

english, 1988

19

Pressure dependence of the DX center in Ga1−xAlxAs:Te in the vicinity of the Γ-X crossover

Li, M. F., Shan, W., Yu, P. Y., Hansen, W. L., Weber, E. R., Bauser, E.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 592 KB

english, 1988

20

Second-harmonic generation at 421 nm using injection-locked GaAlAs laser array and KNbO3

Chun, M. K., Goldberg, L., Weller, J. F.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 399 KB

english, 1988

21

Heavy ion excitation of solid rare gases

Busch, B., Ulrich, A., Krötz, W., Ribitzki, G.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 568 KB

english, 1988

22

Operating characteristics and elevated temperature lifetests of focused ion beam micromachined transverse junction stripe lasers

DeFreez, R. K., Puretz, J., Orloff, J., Elliott, R. A., Namba, H., Omura, E., Namizaki, H.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 449 KB

english, 1988

23

High-speed distributed feedback lasers grown by hydride epitaxy

Temkin, H., Logan, R. A., Karlicek, R. F., Strege, K. E., Blaha, J. P., Gabla, P. M., Savage, A., Oatis, K.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 542 KB

english, 1988

24

Growth of CdTe on GaAs by electrodeposition from an aqueous electrolyte

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 463 KB

english, 1988

25

Physical parameters of GaInAs/Si3N4 interface states obtained by the conductance method

Barrier, Joël, Boher, Pierre, Renaud, Monique

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 505 KB

english, 1988

26

Supermode control in diffraction-coupled semiconductor laser arrays

Mehuys, D., Mitsunaga, K., Eng, L., Marshall, W. K., Yariv, A.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 518 KB

english, 1988

27

Optical-fiber-based photoluminescence spectrometer

Whalen, M. S., Martyak, M. J. R.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 475 KB

english, 1988

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