Volume 53; Issue 26

Applied Physics Letters

Volume 53; Issue 26
7

Epitaxial growth of ErAs on (100)GaAs

Year:
1988
Language:
english
File:
PDF, 661 KB
english, 1988
12

Isoelectronic doping in GaAs epilayers grown by molecular beam epitaxy

Year:
1988
Language:
english
File:
PDF, 532 KB
english, 1988
13

Effect of post-growth annealing on patterned GaAs on silicon

Year:
1988
Language:
english
File:
PDF, 654 KB
english, 1988
14

Defect-related Si diffusion in GaAs on Si

Year:
1988
Language:
english
File:
PDF, 595 KB
english, 1988
24

High Tc Y-Ba-Cu-O thin films by ion beam sputtering

Year:
1988
Language:
english
File:
PDF, 463 KB
english, 1988
26

Hot-carrier light emission from silicon metal-oxide-semiconductor devices

Year:
1988
Language:
english
File:
PDF, 481 KB
english, 1988
30

Laser-induced damage in beta-barium metaborate

Year:
1988
Language:
english
File:
PDF, 553 KB
english, 1988
35

Measurement of opaque coating thickness using photothermal radiometry

Year:
1988
Language:
english
File:
PDF, 426 KB
english, 1988
38

Tl2O3 vapor process of making Tl-Ba-Ca-Cu-O superconductors

Year:
1988
Language:
english
File:
PDF, 511 KB
english, 1988