Volume 53; Issue 4

Applied Physics Letters

Volume 53; Issue 4
1

Diffusion of atomic silicon in gallium arsenide

Year:
1988
Language:
english
File:
PDF, 685 KB
english, 1988
8

Pb1−xEuxS films prepared by hot wall epitaxy

Year:
1988
Language:
english
File:
PDF, 436 KB
english, 1988
11

Constant-current-density model for the anomalous Hall effects in Hg0.8Cd0.2Te

Year:
1988
Language:
english
File:
PDF, 557 KB
english, 1988
15

Epitaxial barium hexaferrite on sapphire by sputter deposition

Year:
1988
Language:
english
File:
PDF, 437 KB
english, 1988
24

660 nm In0.5Ga0.5P light-emitting diodes on Si substrates

Year:
1988
Language:
english
File:
PDF, 474 KB
english, 1988
25

Superconductivity and paramagnetism in ErBa2Cu3O7−y

Year:
1988
Language:
english
File:
PDF, 564 KB
english, 1988
29

Grating structure in self-pumping barium titanate by local erasure

Year:
1988
Language:
english
File:
PDF, 478 KB
english, 1988
31

Short-period (AlAs)(GaAs) superlattice lasers grown by molecular beam epitaxy

Year:
1988
Language:
english
File:
PDF, 605 KB
english, 1988