Volume 54; Issue 1

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Applied Physics Letters
Volume 54; Issue 1

Applied Physics Letters

Volume 54; Issue 1

1

Ablation of polytetrafluoroethylene (Teflon) with femtosecond UV excimer laser pulses

Kuper, S., Stuke, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 660 KB

english, 1989

2

Dependence of the GaAs/AlGaAs superlattice ionization rate on Al content

Kagawa, Toshiaki, Iwamura, Hidetoshi, Mikami, Osamu

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 630 KB

english, 1989

3

Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy

Reithmaier, J.-P., Cerva, H., LoÌsch, R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 623 KB

english, 1989

4

Ultrafast carrier dynamics in modified semiconductor-doped glass

Zheng, J. P., Kwok, H. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 584 KB

english, 1989

5

Tunneling escape time of electrons from a quantum well under the influence of an electric field

Norris, T. B., Song, X. J., Schaff, W. J., Eastman, L. F., Wicks, G., Mourou, G. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 584 KB

english, 1989

6

Quaternary quantum wells for electro-optic intensity and phase modulation at 1.3 and 1.55 μm

Zucker, J. E., Bar-Joseph, I., Miller, B. I., Koren, U., Chemla, D. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 635 KB

english, 1989

7

Novel features of rapidly quenched melts of Bi2(Ca,Sr)3Cu2O8+δ

Varma, K. B. R., Rao, K. J., Rao, C. N. R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 533 KB

english, 1989

8

Low-temperature mobility of two-dimensional electron gas in selectively doped pseudomorphic N-AlGaAs/GaInAs/GaAs structures

Ohno, H., Luo, J. K., Matsuzaki, K., Hasegawa, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 627 KB

english, 1989

9

Efficient generation of 480 fs electrical pulses on transmission lines by photoconductive switching in metalorganic chemical vapor deposited CdTe

Nuss, Martin C., Kisker, D. W., Smith, P. R., Harvey, T. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 628 KB

english, 1989

10

Narrow tracks in YBa2Cu3O7 thin films defined by laser ablation

Humphreys, R. G., Satchell, J. S., Chew, N. G., Edwards, J. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 529 KB

english, 1989

11

Analysis of strained-layer superlattice effects on dislocation density reduction in GaAs on Si substrates

Yamaguchi, Masafumi, Nishioka, Takashi, Sugo, Mitsuru

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 538 KB

english, 1989

12

Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy

Gérard, J. M., Marzin, J. Y., Jusserand, B., Glas, F., Primot, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 596 KB

english, 1989

13

Oscillator strength of ruby R1 line under high pressure

Sharma, Surinder M., Gupta, Y. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 382 KB

english, 1989

14

AlGaAs/GaAs heterojunction bipolar transistors with heavily C-doped base layers grown by flow-rate modulation epitaxy

Makimoto, Toshiki, Kobayashi, Naoki, Ito, Hiroshi, Ishibashi, Tadao

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 408 KB

english, 1989

15

Enhancing the 10.6 μm absorptivity of copper and aluminum using excimer laser radiation

Kinsman, G., Duley, W. W.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 528 KB

english, 1989

16

Electrostatically defined heterojunction rings and the Aharonov–Bohm effect

Ford, C. J. B., Thornton, T. J., Newbury, R., Pepper, M., Ahmed, H., Peacock, D. C., Ritchie, D. A., Frost, J. E. F., Jones, G. A. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 540 KB

english, 1989

17

Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

Wada, O., Nobuhara, H., Hamaguchi, H., Mikawa, T., Tackeuchi, A., Fujii, T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 432 KB

english, 1989

18

Electromigration behavior of aluminum films deposited on silicon by ionized cluster beam and other techniques

Hummel, R. E., Yamada, I.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 548 KB

english, 1989

19

Anisotropic critical current density in superconducting Bi2Sr2CaCu2O8 crystals

Martin, S., Fiory, A. T., Fleming, R. M., Espinosa, G. P., Cooper, A. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 548 KB

english, 1989

20

Laser-assisted photochemical etching of Hg0.8Cd0.2Te

Bienstock, Rachelle J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 500 KB

english, 1989

21

Solid phase epitaxial regrowth of Si1−xGex/Si strained-layer structures amorphized by ion implantation

Chilton, B. T., Robinson, B. J., Thompson, D. A., Jackman, T. E., Baribeau, J.-M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 509 KB

english, 1989

22

Temperature effects on the photoluminescence of GaAs grown on Si

Chen, Y., Freundlich, A., Kamada, H., Neu, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 559 KB

english, 1989

23

Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy

Huang, D., Agarwala, S., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 524 KB

english, 1989

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