Volume 54; Issue 2

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Applied Physics Letters
Volume 54; Issue 2

Applied Physics Letters

Volume 54; Issue 2

1

Correlation of the optical gaps and Raman spectra of hydrogenated amorphous carbon films

Tamor, M. A., Haire, J. A., Wu, C. H., Hass, K. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 580 KB

english, 1989

2

Resonant tunneling diodes for switching applications

Diamond, S. K., Ozbay, E., Rodwell, M. J. W., Bloom, D. M., Pao, Y. C., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 515 KB

english, 1989

3

Growth of InP on Si substrates by molecular beam epitaxy

Crumbaker, T. E., Lee, H. Y., Hafich, M. J., Robinson, G. Y.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 640 KB

english, 1989

4

Correlation between resonantly excited magnetic-field split donor-bound exciton components with their excited state emission analogues in GaAs

Reynolds, D. C., Bajaj, K. K., Theis, W. M., Yu, P. W., Chand, Naresh

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 622 KB

english, 1989

5

Measurements of the nonlinear damping factor in 1.5 μm distributed feedback lasers

Tsuji, S., Vodhanel, R. S., Choy, M. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 514 KB

english, 1989

6

Storage and time reversal of femtosecond light signals via persistent spectral hole burning holography

Rebane, A., Aaviksoo, J., Kuhl, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 527 KB

english, 1989

7

Split-gate field-effect transistor

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 551 KB

english, 1989

8

Sticking coefficient of the SiH2 free radical on a hydrogenated silicon-carbon surface

Robertson, Robert M., Rossi, Michel J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 566 KB

english, 1989

9

Quantum wires in InGaAs/InP fabricated by holographic photolithography

Miller, B. I., Shahar, A., Koren, U., Corvini, P. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 612 KB

english, 1989

10

Optical spectroscopy: An in situ diagnostic for pulsed laser deposition of high Tc superconducting thin films

Wu, X. D., Dutta, B., Hegde, M. S., Inam, A., Venkatesan, T., Chase, E. W., Chang, C. C., Howard, R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 565 KB

english, 1989

11

Tunable far-infrared photovoltaic response in semiconductor field-effect devices

Batke, E., Kaminsky, J., Kotthaus, J. P., Spector, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 480 KB

english, 1989

12

High-temperature kinetics in He and Ne buffered XeF lasers: The effect on absorption

Moratz, Thomas J., Saunders, Todd D., Kushner, Mark J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 566 KB

english, 1989

13

Arsenic-doped CdTe epilayers grown by photoassisted molecular beam epitaxy

Harper, R. L., Hwang, S., Giles, N. C., Schetzina, J. F., Dreifus, D. L., Myers, T. H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 586 KB

english, 1989

14

Double active region index-guided semiconductor laser

Chen, T. R., Kajanto, M., Zhuang, Yuhua, Yariv, A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 449 KB

english, 1989

15

Alloy broadening of the emission barrier of the DX center in aluminum gallium arsenide

Subramanian, S., Anand, S., Chakravarty, S., Arora, B. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 543 KB

english, 1989

16

Improved attenuated total reflectance technique for the investigation of dielectric surfaces

Herminghaus, S., Leiderer, P.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 484 KB

english, 1989

17

Triethylgallium adsorption on Si(100) and Si(111) surfaces

Hirayama, Hiroyuki, Sasaoka, Chiaki, Tatsumi, Toru, Ohshita, Yoshio

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 546 KB

english, 1989

18

Dislocation nucleation and propagation in Si0.95Ge0.05 layers on silicon

Gibbings, C. J., Tuppen, C. G., Hockly, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 498 KB

english, 1989

19

Carrier-injection-type optical switch in GaAs with a 1.06–1.55 μm wavelength range

Ito, Fumihiko, Tanifuji, Tadatoshi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 451 KB

english, 1989

20

High-speed InP/InGaAsP metal-semiconductor field-effect transistors grown by chloride vapor phase epitaxy

Antreasyan, A., Garbinski, P. A., Mattera, V. D., Feuer, M. D., Filipe, J., Chu, S. N. G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 426 KB

english, 1989

21

Influence of hydroxyls on the adhesion of Au films to GaAs

Bardin, T. T., Pronko, J. G., Kozak, D. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 545 KB

english, 1989

22

Bias-induced structure transition in reactively sputtered TiN films

Hashimoto, Keiichi, Onoda, Hiroshi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 460 KB

english, 1989

23

High-field perpendicular conduction in GaAs/AlAs superlattices

Sibille, A., Palmier, J. F., Minot, C., Mollot, F.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 565 KB

english, 1989

24

Rutherford backscattering spectroscopy and electron microprobe analyses of argon gas trapped in alumina thin films

Gignac, Lynne M., Risbud, Subhash H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 447 KB

english, 1989

25

Amorphous silicon photoconductive diode

Hack, M., Shur, M., Tsai, C. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 555 KB

english, 1989

26

Monolithic integrated InGaAsP/InP distributed feedback laser with Y-branching waveguide and a monitoring photodetector grown by metalorganic chemical vapor deposition

Liou, K.-Y., Koren, U., Chandrasekhar, S., Koch, T. L., Shahar, A., Burrus, C. A., Gnall, R. P.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 559 KB

english, 1989

27

Harmonic cross phase modulation in ZnSe

Ho, P. P., Wang, Q. Z., Ji, D., Jimbo, T., Alfano, R. R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 615 KB

english, 1989

28

ZnHgTe as a material for ambient temperature 10.6 μm photodetectors

Piotrowski, Jozef, Adamiec, Krzysztof, Maciak, Andrzej, Nowak, Zenon

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 457 KB

english, 1989

29

Electron and x-ray diffraction study of ZnTe-ZnS strained-layer superlattices grown by molecular beam epitaxy

Karasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 555 KB

english, 1989

30

Nonlinear viscoelastic dilation of SiO2 films

Rafferty, C. S., Landsberger, L. M., Dutton, R. W., Tiller, W. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 508 KB

english, 1989

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