Volume 54; Issue 21

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Applied Physics Letters
Volume 54; Issue 21

Applied Physics Letters

Volume 54; Issue 21

1

Mobility of the two‐dimensional electron gas in AlGaAs/GaAs heterostructures at low electron densities

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 577 KB

english, 1989

2

Low‐pressure hollow cathode switch triggered by a pulsed electron beam emitted from ferroelectrics

Gundel, H., Riege, H., Handerek, J., Zioutas, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 586 KB

english, 1989

3

Shallow p+ junction formation by a reverse-type dopant preamorphization scheme

Ganin, E., Davari, B., Harame, D., Scilla, G., Sai-Halasz, G. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 407 KB

english, 1989

4

Optical and nonlinear optical properties of 4-(N,N-dimethylamino)-3-acetamidonitrobenzene single crystals

Kerkoc, P., Zgonik, M., Sutter, K., Bosshard, Ch., GuÌnter, P.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 652 KB

english, 1989

5

Characterization of a top-illuminated p-i-n diode with an indium tin oxide contact

Zirngibl, M., Hu, Y., Sachot, R., Ilegems, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 528 KB

english, 1989

6

In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces

Drevillon, B., Kumar, Satyendra, Roca i Cabarrocas, P., Siefert, J. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 608 KB

english, 1989

7

Nonradiative energy transfer in Nd:YAG—evidence for the correlated placement of ions

Rotman, Stanley R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 516 KB

english, 1989

8

Surface morphological microstructures of poly(ethylene 2,6-naphthalate) modified by excimer laser ablation

Niino, Hiroyuki, Yabe, Akira, Nagano, Shozaburo, Miki, Tetsuro

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 667 KB

english, 1989

9

Assessment of the ionized EL2 fraction in semi-insulating GaAs

Blakemore, J. S., Sargent, L., Tang, R-S., Swiggard, E. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 564 KB

english, 1989

10

Determination of effective optical constants of magnetic multilayers

Deeter, M. N., Sarid, D., England, C. D., Bennett, W. R., Falco, Charles M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 598 KB

english, 1989

11

Quadratic electro-optic effect in polydiacetylene single crystals

Greene, B. I., Thakur, M., Orenstein, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 547 KB

english, 1989

12

Intermetallic structure of laser reflowed Cu/Pb-Sn solder joints

Felton, L. E., Selsley, A. D., Ficalora, P. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 549 KB

english, 1989

13

Crystal structure of the high Tc (107 K) superconducting phase in Pb-Bi-Sr-Ca-Cu-O

Rong, T. S., Shi, F., Wu, X. F., Zhu, T. J., Shi, Z. H., Du, J., Zhou, S. Z., Shi, N. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 457 KB

english, 1989

14

Is intrinsic bistability really intrinsic tristability?

Coon, D. D., Bandara, K. M. S. V., Zhao, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 663 KB

english, 1989

15

Inelastic tunneling in (111) oriented AlAs/GaAs/AlAs double-barrier heterostructures

Luo, L. F., Beresford, R., Wang, W. I., Mendez, E. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 652 KB

english, 1989

16

Molecular beam epitaxy of metastable, diamond structure SnxGe1−x alloys

Pukite, P. R., Harwit, Alex, Iyer, S. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 594 KB

english, 1989

17

Efficient light emission by impact ionization in single-barrier tunneling devices

Snow, E. S., Kirchoefer, S. W., Campbell, P. M., Glembocki, O. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 514 KB

english, 1989

18

Optical evidences of assisted tunneling in a biased double quantum well structure

Liu, H. W., Ferreira, R., Bastard, G., Delalande, C., Palmier, J. F., Etienne, B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 569 KB

english, 1989

19

Growth flux ratio dependence of microwave devices in molecular beam epitaxy

Chou, Y. C., Lee, C. T., Juang, F. Y., Chang, C. C., Chou, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 457 KB

english, 1989

20

Zn disordering of a Ga0.5In0.5P-(AlxGa1−x)0.5In0.5P quantum well heterostructure grown by metalorganic chemical vapor deposition

Meehan, K., Dabkowski, F. P., Gavrilovic, P., Williams, J. E., Stutius, W., Hsieh, K. C., Holonyak, N.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 598 KB

english, 1989

21

Polyiodide-treated n-WSe2/Au Schottky junctions

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 530 KB

english, 1989

22

Electrical resistivity of thin epitaxial NiAl buried in (Al,Ga)As

Tabatabaie, N., Sands, T., Harbison, J. P., Gilchrist, H. L., Florez, L. T., Keramidas, V. G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 584 KB

english, 1989

23

Novel pseudomorphic high electron mobility transistor structures with GaAs-In0.3Ga0.7As thin strained superlattice active layers

Ballingall, J. M., Ho, P., Tessmer, G. J., Martin, P. A., Lewis, Nathan, Hall, Ernest L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 597 KB

english, 1989

24

Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

Hiramoto, Toshiro, Hirakawa, Kazuhiko, Iye, Yasuhiro, Ikoma, Toshiaki

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 573 KB

english, 1989

25

Wavelength division multiplexing light source with integrated quantum well tunable lasers and optical amplifiers

Koren, U., Koch, T. L., Miller, B. I., Eisenstein, G., Bosworth, R. H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 435 KB

english, 1989

26

Negative photoconductivity due to carrier drag in GaAs/AlGaAs quantum wells

Juen, S., Höpfel, R. A., Gossard, A. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 583 KB

english, 1989

27

Properties of metal-Ba2YCu3O7 composites formed by electrodeposition from nonaqueous solutions onto the superconductor

Rubin, H. D., Rosamilia, J. M., O’Bryan, H. M., Miller, B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 486 KB

english, 1989

28

Amorphous silicon thin-film transistors with two-layer gate insulator

Kim, Nam-Deog, Kim, Choong-Ki, Jang, Jin, Lee, Choochon

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 539 KB

english, 1989

29

Infrared intersubband absorption in GaAs/AlAs multiple quantum wells

Covington, B. C., Lee, C. C., Hu, B. H., Taylor, H. F., Streit, D. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 545 KB

english, 1989

30

Amphoteric native defects in semiconductors

Walukiewicz, W.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 594 KB

english, 1989

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