Volume 54; Issue 3

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Applied Physics Letters
Volume 54; Issue 3

Applied Physics Letters

Volume 54; Issue 3

1

Optical bistability in self-electro-optic effect devices with asymmetric quantum wells

Miller, D. A. B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 553 KB

english, 1989

2

Generation of high-energy atomic beams in laser-superconducting target interactions

Zheng, J. P., Huang, Z. Q., Shaw, D. T., Kwok, H. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 531 KB

english, 1989

3

Band offsets for pseudomorphic InP/GaAs

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 511 KB

english, 1989

4

X-ray imaging of nanostructure patterns

Vladimirsky, Y., Kern, D., Meyer-Ilse, W., Attwood, D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 690 KB

english, 1989

5

Growth and characterization of (111) oriented GaInAs/GaAs strained-layer superlattices

Beery, J. G., Laurich, B. K., Maggiore, C. J., Smith, D. L., Elcess, K., Fonstad, C. G., Mailhiot, C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 544 KB

english, 1989

6

Thermal equilibrium changes in diode structures of doped amorphous silicon

Jang, Jin, Lee, Young Kuen, Kim, Sung Chul, Lee, Choochon

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 574 KB

english, 1989

7

Study of novel chemical surface passivation techniques on GaAs pn junction solar cells

Mauk, M. G., Xu, S., Arent, D. J., Mertens, R. P., Borghs, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 566 KB

english, 1989

8

Depth-dependent native-defect-induced layer disordering in AlxGa1−xAs-GaAs quantum well heterostructures

Guido, L. J., Holonyak, N., Hsieh, K. C., Baker, J. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 557 KB

english, 1989

9

Bound-free intraband absorption in GaAs-AlxGa1−xAs semiconductor quantum wells

Ikonić, Z., Milanović, V., Tjapkin, D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 496 KB

english, 1989

10

Pressure-dependent optical delay time measurements in a coaxial electron beam pumped Ar:Xe laser

Peters, P. J. M., Mei, Qi-Chu, Witteman, W. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 566 KB

english, 1989

11

Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering

Iyer, S. S., Tsang, J. C., Copel, M. W., Pukite, P. R., Tromp, R. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 651 KB

english, 1989

12

Control of the Schottky barrier using an ultrathin interface metal layer

Wu, X., Schmidt, M. T., Yang, E. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 549 KB

english, 1989

13

High quality ZnTe-ZnSe strained-layer superlattice with buffer layer prepared by hot wall epitaxy

Wu, Y. H., Yang, H., Ishida, A., Fujiyasu, H., Nakashima, S., Tahara, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 563 KB

english, 1989

14

Spatial mode structure of broad-area semiconductor quantum well lasers

Chang-Hasnain, C. J., Kapon, E., Bhat, R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 615 KB

english, 1989

15

Interface properties of HgCdTe metal-insulator-semiconductor capacitors

Yang, M. J., Yang, C. H., Kinch, M. A., Beck, J. D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 545 KB

english, 1989

16

Transient absorption spectra of a modulation-doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure measured by picosecond infrared pulses

Elsaesser, T., Bäuerle, R. J., Kaiser, W., Lobentanzer, H., Stolz, W., Ploog, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 597 KB

english, 1989

17

Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon

Wuu, D. S., Horng, R. H., Huang, K. C., Lee, M. K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 499 KB

english, 1989

18

Determination of electron energy distribution in a GaAs vertical field-effect transistor with hot-electron injection

Yamasaki, K., Daniels-Race, T., Lu, S. S., Schaff, W. J., Tasker, P. J., Eastman, L. F.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 524 KB

english, 1989

19

Microstructure of heteroepitaxial Si/CoSi2/Si formed by Co implantation into (100) and (111) Si

Bulle-Lieuwma, C. W. T., van Ommen, A. H., van IJzendoorn, L. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 669 KB

english, 1989

20

Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process

Ohmi, Tadahiro, Iwabuchi, Hiroshi, Shibata, Tadashi, Ichikawa, Takeshi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 550 KB

english, 1989

21

InGaAs/InAsP lasers with output wavelengths of 1.58–2.45 μm

Martinelli, Ramon U., Zamerowski, Thomas J., Longeway, Paul A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 537 KB

english, 1989

22

Laser plasma source of amorphic diamond

Collins, C. B., Davanloo, F., Juengerman, E. M., Osborn, W. R., Jander, D. R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 504 KB

english, 1989

23

Reactive evaporation of titanium oxide films with controlled Ti/O ratio

Nozoye, H., Nishimiya, N., Sato, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 401 KB

english, 1989

24

Rapid, differential microthermometry using Zeeman interferometry

Johnston, Roger G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 494 KB

english, 1989

25

Low-temperature growth of 3C-SiC by the gas source molecular beam epitaxial method

Motoyama, Shin-ichi, Kaneda, Shigeo

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 438 KB

english, 1989

26

H− production in a small multicusp ion source with addition of barium

Walther, S. R., Leung, K. N., Kunkel, W. B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 475 KB

english, 1989

27

Tetragonal and monoclinic forms of GexSi1−x epitaxial layers

Eaglesham, D. J., Maher, D. M., Fraser, H. L., Humphreys, C. J., Bean, J. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 621 KB

english, 1989

28

Anisotropic laser etching of oxidized (100) silicon

Arnone, C., Scelsi, G. B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 644 KB

english, 1989

29

Light-scattering limitations for phase conjugation in optical Kerr media

McGraw, R., Rogovin, D., Gavrielides, A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 605 KB

english, 1989

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