Volume 54; Issue 4

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Applied Physics Letters
Volume 54; Issue 4

Applied Physics Letters

Volume 54; Issue 4

1

Observation of twin boundary layers in pure and alloyed YBa2Cu3O7âÎ´

Zhu, Y., Suenaga, M., Xu, Youwen, Sabatini, R. L., Moodenbaugh, A. R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 741 KB

english, 1989

2

Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment

Callegari, A., Hoh, P. D., Buchanan, D. A., Lacey, D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 597 KB

english, 1989

3

Efficient Er3+-doped optical fiber amplifier pumped by a 1.48 μm InGaAsP laser diode

Nakazawa, Masataka, Kimura, Yasuo, Suzuki, Kazunori

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 493 KB

english, 1989

4

Identification of oxygen vacancies in YBaCuO superconductors by high-resolution electron microscopy

Liang, Y. H., Chen, J., Feng, D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 698 KB

english, 1989

5

Low-temperature deposition of Y-Ba-Cu-O films on a CaF2/GaAs substrate

Mizuno, K., Miyauchi, M., Setsune, K., Wasa, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 526 KB

english, 1989

6

Oriented high Tc superconductive layers on silver by devitrification of glasses formed in the Bi-Sr-Ca-Cu oxide system

Baker, R. C., Hurng, W. M., Steinfink, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 671 KB

english, 1989

7

On the possibility of transistor action based on quantum interference phenomena

Sols, Fernando, Macucci, M., Ravaioli, U., Hess, Karl

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 638 KB

english, 1989

8

Optically controlled absorption modulator based on state filling of InxGa1−xAs/GaAs quantum wells

Iannelli, J. M., Maserjian, J., Hancock, B. R., Andersson, P. O., Grunthaner, F. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 606 KB

english, 1989

9

Thermal recovery process of the midgap-state profile of light-soaked undoped hydrogenated amorphous silicon

Matsuura, Hideharu

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 543 KB

english, 1989

10

Cu valence and the formation of high Tc superconductor oxides studied by x-ray photoemission spectroscopy on 200 Å Bi-Sr-Ca-Cu oxide thin films

Yeh, J.-J., DiCenzo, S. B., Hartford, E. H., Hong, M., Felder, R. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 677 KB

english, 1989

11

Vertical to surface transmission electrophotonic device with selectable output light channels

Tashiro, Y., Hamao, N., Sugimoto, M., Takado, N., Asada, S., Kasahara, K., Yanase, T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 572 KB

english, 1989

12

Hysteretic ac losses in high-temperature superconductors

Kozlowski, G., Chen, X. Y.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 511 KB

english, 1989

13

Magnetic hardening of Pr-Fe-Co-B alloys by rapid quenching

Wecker, J., Schultz, L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 552 KB

english, 1989

14

Hydrogenation and subsequent hydrogen annealing of GaAs on Si

Hsieh, K. C., Feng, M. S., Stillman, G. E., Holonyak, N., Ito, C. R., Feng, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 690 KB

english, 1989

15

Theory of the rf sheath in the regime between the ion and electron plasma frequencies

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 498 KB

english, 1989

16

X-ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfaces

Cowans, B. A., Dardas, Z., Delgass, W. N., Carpenter, M. S., Melloch, M. R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 528 KB

english, 1989

17

Effects of indium doping on crystalline qualities of GaAs on Si by molecular beam epitaxy

Ohbu, I., Ishino, M., Mozume, T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 460 KB

english, 1989

18

Coherent Si growth on GaAs substrates by vapor phase deposition

Tamamura, K., Akimoto, K., Mori, Y.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 506 KB

english, 1989

19

c-axis oriented YBa2Cu3O7−x superconducting films by metalorganic chemical vapor deposition

Zhang, K., Kwak, B. S., Boyd, E. P., Wright, A. C., Erbil, A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 570 KB

english, 1989

20

High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics

Giapis, Konstantinos P., Lu, Da-Cheng, Jensen, Klavs F.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 576 KB

english, 1989

21

Response to ‘‘Critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’ ’’ [Appl. Phys. Lett. 54, 398 (1989)]

Jackson, W. B., Tsai, C. C., Stutzmann, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 388 KB

english, 1989

22

Critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’’ [Appl. Phys. Lett. 45, 1075 (1984)]

Redfield, David

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 473 KB

english, 1989

23

Patterned quantum well semiconductor laser arrays

Kapon, E., Harbison, J. P., Yun, C. P., Florez, L. T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 520 KB

english, 1989

24

Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts

Liliental-Weber, Z., Newman, N., Washburn, J., Weber, E. R., Spicer, W. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 631 KB

english, 1989

25

Interaction of MeV ions with pre-existing damage in Si: A new ion beam annealing mechanism

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 603 KB

english, 1989

26

Coherent broadband microwave spectroscopy using picosecond optoelectronic antennas

Pastol, Y., Arjavalingam, G., Halbout, J.-M., Kopcsay, G. V.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 582 KB

english, 1989

27

Use of surface charging in x-ray photoelectron spectroscopic studies of ultrathin dielectric films on semiconductors

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 498 KB

english, 1989

28

Study on the stabilization of the high Tc phase in a BiSrCaCuO system

Lee, H. G., Kim, C. J., Lee, K. H., Won, D. Y.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 483 KB

english, 1989

29

Ar ion laser-assisted metalorganic molecular beam epitaxy of GaAs

Sugiura, H., Iga, R., Yamada, T., Yamaguchi, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 516 KB

english, 1989

30

Infrared absorption of Ir and IrSi thin films on Si substrates

Chen, C. K., Tsaur, B-Y., Finn, M. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 547 KB

english, 1989

31

X-ray diffraction of strain relaxation in Si-Si1−xGex heterostructures

Baribeau, J.-M., Kechang, Song, Munro, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 525 KB

english, 1989

32

Temperature-tunable second-harmonic generation in zinc germanium diphosphide

Bhar, G. C., Das, S., Chatterjee, U., Vodopyanov, K. L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 454 KB

english, 1989

33

High-power 1.3 μm superluminescent diode

Kwong, Norman S. K., Bar-Chaim, Nadav, Chen, Tirong

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 442 KB

english, 1989

34

Self-consistent resonant states and phase coherence in a wide double-barrier structure

Choi, K. K., Newman, P. G., Folkes, P. A., Iafrate, G. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 557 KB

english, 1989

35

Formation of a nearly pure aluminum layer in beryllium using ion implantation

Brown, D. W., Musket, R. G., Munir, Z. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 640 KB

english, 1989

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