Volume 54; Issue 7

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Applied Physics Letters
Volume 54; Issue 7

Applied Physics Letters

Volume 54; Issue 7

1

Intervalley deformation potentials and scattering rates in zinc blende semiconductors

Zollner, Stefan, Gopalan, Sudha, Cardona, Manuel

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 647 KB

english, 1989

2

Effects of temperature and electrical stress on the performance of thin-film transistors fabricated from undoped low-pressure chemical vapor deposited polycrystalline silicon

Dimitriadis, C. A., Coxon, P. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 537 KB

english, 1989

3

Influence of the As:Ga flux ratio on growth rate, interface quality, and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

Köhrbrück, R., Munnix, S., Bimberg, D., Larkins, E. C., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 576 KB

english, 1989

4

Oxygen-nitrogen complexes in silicon formed by annealing in nitrogen

Hara, Akito, Fukuda, Tetsuo, Miyabo, Toru, Hirai, Iesada

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 452 KB

english, 1989

5

Reduction of transient-enhanced diffusion of boron in silicon by implantation through oxide

Fan, D., Jaccodine, R. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 533 KB

english, 1989

6

Si particle density reduction in Si molecular beam epitaxy using a deflection electrode

Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 588 KB

english, 1989

7

Tertiary butylarsine grown GaAs solar cell

Sundaram, V. S., Arau, B. A., Avery, J. E., Bailey, A. L., Girard, G. R., Hager, H. E., Thompson, A. G., Fraas, L. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 528 KB

english, 1989

8

Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane

Regolini, J. L., Bensahel, D., Scheid, E., Mercier, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 468 KB

english, 1989

9

In situ x-ray photoelectron spectroscopic study of GaAs grown by atomic layer epitaxy

Kodama, K., Ozeki, M., Mochizuki, K., Ohtsuka, N.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 478 KB

english, 1989

10

Low-temperature measurement of the fundamental frequency response of a semiconductor laser by active-layer photomixing

Newkirk, Michael A., Vahala, Kerry J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 560 KB

english, 1989

11

Surface recombination current and emitter compositional grading in Npn and Pnp GaAs/AlxGa1−xAs heterojunction bipolar transistors

de Lyon, T. J., Casey, H. C., Enquist, P. M., Hutchby, J. A., SpringThorpe, A. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 595 KB

english, 1989

12

Spin-polarized photoemission from AlGaAs/GaAs heterojunction: A convenient highly polarized electron source

Ciccacci, F., Drouhin, H.-J., Hermann, C., Houdré, R., Lampel, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 523 KB

english, 1989

13

High-power traveling-wave tube amplifier

Shiffler, D., Nation, John A., Wharton, C. B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 514 KB

english, 1989

14

Franz–Keldysh oscillations originating from a well-controlled electric field in the GaAs depletion region

Van Hoof, C., Deneffe, K., De Boeck, J., Arent, D. J., Borghs, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 559 KB

english, 1989

15

Magnetic flux motion and its influence on transport properties of the high Tc oxide superconductors

Sun, J. Z., Char, K., Hahn, M. R., Geballe, T. H., Kapitulnik, A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 612 KB

english, 1989

16

High-power discharge-pumped F2 molecular laser

Yamada, Kawakatsu, Miyazaki, Kenzo, Hasama, Toshifumi, Sato, Takuzo

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 602 KB

english, 1989

17

Erratum: Surface-emitting, multiple quantum well GaAs/AlGaAs laser with wavelength-resonant periodic gain medium [Appl. Phys. Lett. 53, 1678 (1988)]

Raja, M. Y. A., Brueck, S. R. J., Osiński, M., Schaus, C. F., McInerney, J. G., Brennan, T. M., Hammons, B. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 229 KB

english, 1989

18

Radiative recombination in PbTe quantum wells

Heyen, E. T., Hagerott, M., Nurmikko, A. V., Partin, D. L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 594 KB

english, 1989

19

Tunnel injection into a Wannier–Stark ladder

England, P., Helm, M., Hayes, J. R., Harbison, J. P., Colas, E., Florez, L. T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 550 KB

english, 1989

20

Rapid thermal annealing: An efficient means to reveal chromium profiles in Si after diffusion and gettering

Zhu, J., Chaussemy, G., Barbier, D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 485 KB

english, 1989

21

Threshold voltage shift of amorphous silicon thin-film transistors by step doping

Matsumoto, T., Mishima, Y., Yanai, K., Oki, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 432 KB

english, 1989

22

Minority-carrier lifetimes in undoped AlGaAs/GaAs multiple quantum wells

Hariz, A., Dapkus, P. Daniel, Lee, H. C., Menu, E. P., DenBaars, S. P.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 503 KB

english, 1989

23

Properties of ultrathin thermal nitrides in silicon Schottky barrier structures

Sobolewski, M. A., Helms, C. R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 552 KB

english, 1989

24

Low-resistance contacts on YBa2Cu3O7−δ ceramics prepared by direct wire bonding methods

Suzuki, Yoshihiko, Kusaka, Tadaoki, Aoyama, Takahiro, Yotsuya, Tsutom, Ogawa, Soichi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 532 KB

english, 1989

25

Effects of annealing on TlBaCaCuO thin films

Denhoff, M. W., Grant, P., Qiu, C. X., Shih, I., Robinson, P. T., Sproule, I., Mitchell, D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 676 KB

english, 1989

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