Volume 54; Issue 9

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Applied Physics Letters
Volume 54; Issue 9

Applied Physics Letters

Volume 54; Issue 9

1

Intersubband absorption in strained InxGa1âxAs/Al0.4Ga0.6As (0â¤xâ¤0.15) multiquantum wells

Zhou, X., Bhattacharya, P. K., Hugo, G., Hong, S. C., Gulari, E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 525 KB

english, 1989

2

Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×106 cm2/V s

Sajoto, T., Santos, M., Heremans, J. J., Shayegan, M., Heiblum, M., Weckwerth, M. V., Meirav, U.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 507 KB

english, 1989

3

Molecular beam epitaxy growth of CoSi2 at room temperature

Tung, R. T., Schrey, F.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 650 KB

english, 1989

4

Folded acoustic phonons in InAs-AlAs strained-layer superlattices

Recio, M., Armelles, G., Ruiz, A., Mazuelas, A., Briones, F.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 455 KB

english, 1989

5

New mechanism for diffusion of ion-implanted boron in Si at high concentration

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 631 KB

english, 1989

6

Growth of (111) CdTe on tilted (001) GaAs

Cibert, J., Gobil, Y., Saminadayar, K., Tatarenko, S., Chami, A., Feuillet, G., Dang, Le Si, Ligeon, E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 656 KB

english, 1989

7

Study of the SiO2/Si interface endurance property during rapid thermal nitridation and reoxidation processing

Shih, D. K., Kwong, D. L., Lee, S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 685 KB

english, 1989

8

Characteristics of electron spin resonance in hydrogenated amorphous silicon-carbon/hydrogenated amorphous silicon heterojunctions

Chen, Guanghua, Sun, Guosheng, Zhang, Fangqing

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 558 KB

english, 1989

9

Optically enhanced photoconductivity in semi-insulating gallium arsenide

Desnica, U. V., Šantić, B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 570 KB

english, 1989

10

Grain boundary amorphization reaction in thin films of elemental Cu and Y

Johnson, R. W., Ahn, C. C., Ratner, E. R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 712 KB

english, 1989

11

Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si

Fahey, P., Iyer, S. S., Scilla, G. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 576 KB

english, 1989

12

Confined phonons in (GaAs)n1(AlAs)n2 superlattices grown along the [012] direction

Popović, Z. V., Cardona, M., Tapfer, L., Ploog, K., Richter, E., Strauch, D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 586 KB

english, 1989

13

Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3-dimethylaminopropyl) indium as a new indium source

Molassioti, A., Moser, M., Stapor, A., Scholz, F., Hostalek, M., Pohl, L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 370 KB

english, 1989

14

Properties of Si layers grown by molecular beam epitaxy at very low temperatures

Jorke, H., Kibbel, H., Schäffler, F., Casel, A., Herzog, H.-J., Kasper, E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 491 KB

english, 1989

15

Linear and nonlinear optical properties of flux-grown KTiOAsO4

Bierlein, John D., Vanherzeele, Herman, Ballman, A. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 507 KB

english, 1989

16

Diode laser pumped blue-light source based on intracavity sum frequency generation

Risk, W. P., Lenth, W.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 609 KB

english, 1989

17

Characterization of the focused output from a selenium soft x-ray laser

Nilson, D. G., Brown, S. B., Keane, C. J., MacGowan, B. J., Matthews, D. L., Trebes, J. E., Wood, O. R., Silfvast, W. T., Al-Salameh, D. Y., Harvey, T. E., Maloney, P. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 569 KB

english, 1989

18

Single target sputtering of superconducting YBa2Cu3O7−δ thin films on Si (100)

Migliuolo, M., Stamper, A. K., Greve, D. W., Schlesinger, T. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 513 KB

english, 1989

19

Influence of temperature on electron transport in bipolar devices

Bardyszewski, Witold, Yevick, David

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 475 KB

english, 1989

20

Scaling size distribution of oxide defects, trema-fractal oxide layer, and breakdown statistics of metal-oxide-semiconductor devices

Yadava, R. D. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 544 KB

english, 1989

21

Redistribution of deep levels in semi-insulating GaAs wafer by rapid thermal processing

Usami, Akira, Kitagawa, Akio, Wada, Takao

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 498 KB

english, 1989

22

Thermal annealing and zinc doping effects on the lattice constant of organometallic vapor phase grown GaAs epilayers on heavily In-doped substrates

Imai, Tetsuji, Fuke, Shunro, Mori, Katsumi, Kuwahara, Kazuhiro

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 630 KB

english, 1989

23

Empirical photoablation rate model exemplified with the etching of polyphenylquinoxaline

Lazare, Sylvain, Granier, Vincent

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 432 KB

english, 1989

24

High-field transport in GaAs transistors

Berthold, K., Levi, A. F. J., Walker, J., Malik, R. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 494 KB

english, 1989

25

Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds

Marioton, B. P. R., Tan, T. Y., Gösele, U.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 542 KB

english, 1989

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