Volume 55; Issue 12

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Applied Physics Letters
Volume 55; Issue 12

Applied Physics Letters

Volume 55; Issue 12

1

Calculation of the electron wave function in a graded‐channel double‐heterojunction modulation‐doped field‐effect transistor

Mui, D. S. L., Patil, M. B., Morkoc, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 541 KB

english, 1989

2

Anisotropic transport and nonparabolic miniband in a novel in‐plane superlattice consisting of a grid‐inserted selectively doped heterojunction

Motohisa, J., Tanaka, M., Sakaki, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 675 KB

english, 1989

3

Single quantum well photoluminescence in ZnSe/GaAs/AlGaAs grown by migration‐enhanced epitaxy

Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 662 KB

english, 1989

4

Band offsets and deep defect distribution in hydrogenated amorphous silicon-crystalline silicon heterostructures

Essick, John M., Cohen, J. David

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 576 KB

english, 1989

5

Asymmetric dual quantum well laser—wavelength switching controlled by injection current

Ikeda, Sotomitsu, Shimizu, Akira, Hara, Toshitami

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 567 KB

english, 1989

6

Thermodynamics approach to catastrophic optical mirror damage of AlGaAs single quantum well lasers

Moser, A., Latta, E.-E., Webb, D. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 658 KB

english, 1989

7

Fast photothermal measurement system for inspection of weak adhesion defects

Hartikainen, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 587 KB

english, 1989

8

Low-temperature photoluminescence from CdTe grown by hot-wall epitaxy on GaAs

Lischka, K., Schmidt, T., Pesek, A., Sitter, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 548 KB

english, 1989

9

Dehydrogenation—a simple method of synthesizing metallic glasses

Tsai, Rung-Ywan, Wu, Shinn-Tyan

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 630 KB

english, 1989

10

Metalorganic chemical vapor deposition of Tl2CaBa2Cu2Oy superconducting thin films on sapphire

Zhang, K., Boyd, E. P., Kwak, B. S., Wright, A. C., Erbil, A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 664 KB

english, 1989

11

Noncritically phase-matched frequency doubling using 994 nm dye and diode laser radiation in KTiOPO4

Risk, W. P., Payne, R. N., Lenth, W., Harder, C., Meier, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 607 KB

english, 1989

12

Zone-melting recrystallization with enhanced radiative heating for preparation of subboundary-free silicon-on-insulator thin films

Chen, C. K., Im, J. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 589 KB

english, 1989

13

Laser-induced chemical vapor deposition of aluminum

Baum, Thomas H., Larson, Carl E., Jackson, Robert L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 637 KB

english, 1989

14

Silicon crystallite formation in ion-implanted quartz

Ramabadran, Uma B., Jackson, Howard E., Farlow, G. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 533 KB

english, 1989

15

All-optical switching in nonlinear X junctions

Sabini, J. P., Finlayson, N., Stegeman, G. I.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 580 KB

english, 1989

16

Quantum-confined field-effect light emitters with high-speed switching capability

Kan, Y., Yamanishi, M., Okuda, M., Mukaiyama, K., Ohnishi, T., Kawamoto, M., Suemune, I.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 570 KB

english, 1989

17

Stacking fault induced relative dipole at type A/B NiSi2/Si (111) interfaces and its correlation to the Si (111) 7×7 subunit cell structures

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 590 KB

english, 1989

18

Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures

Cullis, A. G., Chew, N. G., Whitehouse, C. R., Jacobson, D. C., Poate, J. M., Pearton, S. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 684 KB

english, 1989

19

Fabrication of integrated optical structures in polydiacetylene films by irreversible photoinduced bleaching

Rochford, K. B., Zanoni, R., Gong, Q., Stegeman, G. I.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 558 KB

english, 1989

20

Epitaxial growth of YBa2Cu3O7−δ thin films on LiNbO3 substrates

Lee, S. G., Koren, G., Gupta, A., Segmüller, Armin, Chi, C. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 506 KB

english, 1989

21

Effect of oxygen partial pressure on the transformation between high Tc and low Tc phases in a Bi-Pb-Sr-Ca-Cu-O system

Lee, H. K., Lee, K. W., Ha, D. H., Park, K., Park, J. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 519 KB

english, 1989

22

Anisotropic thermionic emission of electrons contained in GaAs/AlAs floating gate device structures

Lott, J. A., Klem, J. F., Weaver, H. T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 506 KB

english, 1989

23

Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces

Olson, J. M., Ahrenkiel, R. K., Dunlavy, D. J., Keyes, Brian, Kibbler, A. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 571 KB

english, 1989

24

Kinetics of pressure-dependent gradual degradation of semiconductor lasers and light-emitting diodes

Khait, Yu. L., Salzman, J., Beserman, R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 557 KB

english, 1989

25

Enhancement of modulation bandwidth in InGaAs strained-layer single quantum well lasers

Lau, K. Y., Xin, S., Wang, W. I., Bar-Chaim, N., Mittelstein, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 534 KB

english, 1989

26

Efficient frequency doubling of a mode-locked diode-laser-pumped Nd:YAG laser

Maker, G. T., Ferguson, A. I.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 544 KB

english, 1989

27

Surface stress effects on the critical film thickness for epitaxy

Cammarata, R. C., Sieradzki, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 444 KB

english, 1989

28

Temperature dependence of spontaneous emission in GaAs-AlGaAs quantum well lasers

Blood, P., Kucharska, A. I., Foxon, C. T., Griffiths, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 539 KB

english, 1989

29

Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe

Rajakarunanayake, Y., Cole, B. H., McCaldin, J. O., Chow, D. H., Söderström, J. R., McGill, T. C., Jones, C. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 585 KB

english, 1989

30

Using a hydrogen ambient to eliminate interfacial boron spikes in reduced temperature silicon epitaxy

Robbins, D. J., Pidduck, A. J., Glasper, J. L., Young, I. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 563 KB

english, 1989

31

Direct observation of GaAs atomic layer epitaxy by reflection high-energy electron diffraction

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 623 KB

english, 1989

32

Effects of Fe on the superconductivity of 110 K phase superconductor Bi-Pb-Sr-Ca-Cu-O

Sun, Yuping, Jiang, Jianyi, Zheng, Fanchun, Yin, Huaqing, Du, Jiaju

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 425 KB

english, 1989

33

Bi4Ca3Sr3Cu4Oy ceramic fibers from crystallization of glasses

Zheng, Haixing, Hu, Yi, Mackenzie, J. D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 613 KB

english, 1989

34

Integrable parametric waveguide spectrometer—a nonlinear optical device capable of resolving modes of semiconductor lasers

Vakhshoori, D., Walker, J., Dijaili, S., Wang, S., Smith, J. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 605 KB

english, 1989

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