Volume 55; Issue 14

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Applied Physics Letters
Volume 55; Issue 14

Applied Physics Letters

Volume 55; Issue 14

1

Soft and hard ionization thresholds in Si and GaAs

Sano, Nobuyuki, Aoki, Takahiro, Yoshii, Akira

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 544 KB

english, 1989

2

Extremely low resistivity erbium ohmic contacts to n‐type silicon

Janega, P. L., McCaffrey, J., Landheer, D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 539 KB

english, 1989

3

High quality electron system with variable electron layer thickness in a parabolic quantum well

Sajoto, T., Jo, J., Santos, M., Shayegan, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 608 KB

english, 1989

4

Combined effect of strained-layer superlattice and annealing in defects reduction in GaAs grown on Si substrates

El-Masry, N. A., Tarn, J. C. L., Bedair, S. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 626 KB

english, 1989

5

Performance of dc SQUIDs with resistively shunted inductance

Foglietti, V., Gallagher, W. J., Ketchen, M. B., Kleinsasser, A. W., Koch, R. H., Sandstrom, R. L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 639 KB

english, 1989

6

Hydrogen passivation of electrically active defects in diamond

Landstrass, M. I., Ravi, K. V.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 531 KB

english, 1989

7

Luminescence of the DX center in AlGaAs

Alaya, S., Maaref, H., Bourgoin, J. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 560 KB

english, 1989

8

Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity-induced disordering

Wolf, T., Shieh, C.-L., Engelmann, R., Alavi, K., Mantz, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 666 KB

english, 1989

9

Effect of Pb and Sb substitutions on superconducting Bi-Sr-Ca-Cu-O prepared by oxidation of liquid-quenched precursor alloys

Luo, J. S., Michel, D., Chevalier, J-P.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 570 KB

english, 1989

10

Magnetic field controlled levitation and suspension of a magnet above and below type II superconductors

Takamori, Takeshi, Boland, John J., Dove, Derek B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 651 KB

english, 1989

11

Effect of water vapor on a CH4-H2 discharge plasma

Lockwood, R. B., Miers, R. E., Anderson, L. W., Lawler, J. E., Lin, Chun C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 570 KB

english, 1989

12

Doping of diamond by coimplantation of carbon and boron

Sandhu, G. S., Swanson, M. L., Chu, W. K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 590 KB

english, 1989

13

Electronic states in lateral structures on modulation-doped heterointerfaces

Tokura, Y., Tsubaki, K., Susa, N.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 575 KB

english, 1989

14

Pendant benzene in hydrogenated diamond-like carbon

Tamor, M. A., Wu, C. H., Carter, R. O., Lindsay, N. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 612 KB

english, 1989

15

Structure and stability of metastable α-Sn

Asom, M. T., Kortan, A. R., Kimerling, L. C., Farrow, R. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 686 KB

english, 1989

16

Laser writing of high-purity gold lines

Jubber, M., Wilson, J. I. B., Davidson, J. L., Fernie, P. A., John, P.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 565 KB

english, 1989

17

Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAs

Clausen, E. M., Craighead, H. G., Worlock, J. M., Harbison, J. P., Schiavone, L. M., Florez, L., Van der Gaag, B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 677 KB

english, 1989

18

High-gain lateral hot-electron device

Palevski, A., Umbach, C. P., Heiblum, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 620 KB

english, 1989

19

New class of unstable orbits of the equilibrium electrons in free-electron lasers

Zhang, Shi-Chang, Zhang, Zhong

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 382 KB

english, 1989

20

Critical temperature enhancement of Bi2Sr2CaCu2Ox by phenolization

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 473 KB

english, 1989

21

New and simple optical method for in situ etch rate determination and endpoint detection

Heinrich, F., Stoll, H.-P., Scheer, H.-C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 444 KB

english, 1989

22

Plan-view transmission electron diffraction measurement of roughness at buried Si/SiO2 interfaces

Gibson, J. M., Lanzerotti, M. Y., Elser, V.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 578 KB

english, 1989

23

Zero resistance at 132 K in lead-free Bi1.9Sb0.1Sr2Ca2Cu3Oy

Chandrachood, M. R., Mulla, I. S., Sinha, A. P. B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 316 KB

english, 1989

24

High-density Bi-Pb-Sr-Ca-Cu-O superconductor prepared by rapid thermal melt processing

Moon, B. M., Lalevic, B., Kear, B. H., McCandlish, L. E., Safari, A., Meskoob, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 516 KB

english, 1989

25

Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy

Eng, L. E., Chen, T. R., Sanders, S., Zhuang, Y. H., Zhao, B., Yariv, A., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 397 KB

english, 1989

26

InGaAs/GaAs strained quantum wells with a 1.3 μm band edge at room temperature

Melman, P., Elman, B., Jagannath, C., Koteles, Emil S., Silletti, A., Dugger, D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 486 KB

english, 1989

27

Bias-controlled intersubband wavelength switching in a GaAs/AlGaAs quantum well laser

Berthold, K., Levi, A. F. J., Pearton, S. J., Malik, R. J., Jan, W. Y., Cunningham, J. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 518 KB

english, 1989

28

Pressure dependence of DX center mobility in highly doped GaAs

O’Reilly, E. P.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 581 KB

english, 1989

29

Complete single lateral 180° phase mode operation for AlGaAs phased array lasers

Sagawa, M., Kajimura, T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 417 KB

english, 1989

30

Fabrication of quasi-zero-dimensional submicron dot array and capacitance spectroscopy in a GaAs/AlGaAs heterostructure

Fang, H., Zeller, R., Stiles, P. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 687 KB

english, 1989

31

Multiple quantum well optical waveguides with large absorption edge blue shift produced by boron and fluorine impurity-induced disordering

O’Neill, M., Bryce, A. C., Marsh, J. H., De La Rue, R. M., Roberts, J. S., Jeynes, C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 624 KB

english, 1989

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