Volume 55; Issue 15

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Applied Physics Letters
Volume 55; Issue 15

Applied Physics Letters

Volume 55; Issue 15

1

Antiphase domain boundary formation in single‐crystal chalcopyrite‐structure ZnGeAs2 grown on GaAs

Solomon, G. S., Posthill, J. B., Timmons, M. L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 643 KB

english, 1989

2

Photoluminescence studies of Siâ(100) doped with low-energy (â¤1000 eV) As+ ions during molecular beam epitaxy

NoeÌl, J.-P., Greene, J. E., Rowell, N. L., Kechang, S., Houghton, D. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 727 KB

english, 1989

3

Organic electroluminescent device having a hole conductor as an emitting layer

Adachi, Chihaya, Tsutsui, Tetsuo, Saito, Shogo

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 584 KB

english, 1989

4

New high-efficiency quasi-continuous operation of an ArF(BâX) excimer lamp excited by microwave discharge

Kumagai, Hiroshi, Obara, Minoru

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 416 KB

english, 1989

5

Quantum-confined Stark effect in very small semiconductor crystallites

F. Hache, D. Ricard, C. Flytzanis

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 564 KB

english, 1989

6

Heteroepitaxial In0.1Ga0.9As metal-semiconductor field-effect transistors fabricated on GaAs and Si substrates

Wang, G. W., Ito, C., Feng, M., Kaliski, R., McIntyre, D., Lau, C., Eu, V. K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 586 KB

english, 1989

7

Superconducting properties of Ba2YCu3O7−x thin films prepared by chemical vapor deposition on SrTiO3 and a metal substrate

Yamaguchi, Taichi, Aoki, Shinya, Sadakata, Nobuyuki, Kohno, Osamu, Osanai, Hiroshi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 488 KB

english, 1989

8

200 MW S-band Dielectric Cherenkov Maser oscillator

Main, William, Cherry, Randall, Garate, Eusebio

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 510 KB

english, 1989

9

Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers

Bour, D. P., Martinelli, Ramon U., Gilbert, D. B., Elbaum, L., Harvey, M. G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 633 KB

english, 1989

10

Resonant tunneling through X-valley states in GaAs/AlAs/GaAs single-barrier heterostructures

Beresford, R., Luo, L. F., Wang, W. I., Mendez, E. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 532 KB

english, 1989

11

Use of cation-stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxy

Arias, José, Singh, Jasprit

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 593 KB

english, 1989

12

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

Kim, Jae-Hoon, Lang, Robert J., Radhakrishnan, Gouri, Katz, Joseph, Narayanan, Authi A., Craig, Richard R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 566 KB

english, 1989

13

Photoluminescence and space-charge distribution in a double-barrier diode under operation

Vodjdani, N., Chevoir, F., Thomas, D., Cote, D., Bois, P., Costard, E., Delaitre, S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 579 KB

english, 1989

14

Amorphous phase formation by solid-state reaction between polycrystalline Co thin films and single-crystal GaAs

Shiau, F. Y., Chang, Y. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 621 KB

english, 1989

15

Dislocations in In0.1Ga0.9As/GaAs multilayers epitaxially grown on Si substrates

Morita, Tatsuo, Furukawa, M., Shimizu, M., Nakajima, Y., Sakurai, T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 437 KB

english, 1989

16

Magnetic measurements of superconducting glass-ceramic fine rods in Bi1Ca1Sr1Cu2Al0.5Ox prepared under a temperature gradient

Higashida, Yutaka, Yokoyama, Hisanori, Michishita, Kazuo, Kubo, Yukio, Yoshida, Hiroshi, Abe, Yoshihiro, Hosono, Hideo

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 513 KB

english, 1989

17

Injection in a continuum miniband: Observation of negative transconductance in a superlattice-base transistor

Beltram, Fabio, Capasso, Federico, Hutchinson, Albert L., Malik, Roger J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 478 KB

english, 1989

18

Efficient fiber coupling to low-loss diluted multiple quantum well optical waveguides

Deri, R. J., Yasuoka, N., Makiuchi, M., Kuramata, A., Wada, O.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 521 KB

english, 1989

19

Concept, design, and use of the photoacoustic heat pipe cell

Jalink, Henk, Bicanic, Dane

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 465 KB

english, 1989

20

Homogeneous and interfacial heat releases in amorphous silicon

Donovan, E. P., Spaepen, F., Poate, J. M., Jacobson, D. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 572 KB

english, 1989

21

Misfit accommodation in a lattice-mismatched HgTe-CdTe superlattice/HgCdTe heterostructure grown by molecular beam epitaxy

Hanlon, T. R., Koestner, R. J., Liu, H.-Y.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 516 KB

english, 1989

22

Chemical vapor deposition of single-crystal films of cubic SiC on patterned Si substrates

Shigeta, Mitsuhiro, Fujii, Yoshihisa, Furukawa, Katsuki, Suzuki, Akira, Nakajima, Shigeo

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 561 KB

english, 1989

23

Si-Si1−xGex n-type resonant tunnel structures

Rajakarunanayake, Y., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 567 KB

english, 1989

24

Barrier tuning by means of a quantum, interface-induced dipole in a doping layer

Müller, G., Zrenner, A., Koch, F., Ploog, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 497 KB

english, 1989

25

Zinc delta doping of GaAs by organometallic vapor phase epitaxy

Hobson, W. S., Pearton, S. J., Schubert, E. F., Cabaniss, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 545 KB

english, 1989

26

Shock wave induced changes in superconductivity in YBa2Cu3O7−δ

Murr, L. E., Niou, C. S., Jin, S., Tiefel, T. H., James, A. C. W. P., Sherwood, R. C., Siegrist, T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 637 KB

english, 1989

27

Microcrystallite size dependence of absorption and photoluminescence spectra in CdSxSe1−x-doped glass

Shinojima, H., Yumoto, J., Uesugi, N., Omi, S., Asahara, Y.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 576 KB

english, 1989

28

Thermal stability of the Cu/Pd/Si metallurgy

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 555 KB

english, 1989

29

Kinetics aspects of TiSi2 deposition without silicon consumption

Bensahel, D., Regolini, J. L., Mercier, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 650 KB

english, 1989

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