Volume 55; Issue 17

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Applied Physics Letters
Volume 55; Issue 17

Applied Physics Letters

Volume 55; Issue 17

1

Wet chemical techniques for passivation of YBa2Cu3O7-x

Vasquez, R. P., Foote, M. C., Hunt, B. D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 636 KB

english, 1989

2

Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes

Brown, E. R., Sollner, T. C. L. G., Parker, C. D., Goodhue, W. D., Chen, C. L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 717 KB

english, 1989

3

AlxGa1âxN polarity determination by x-ray diffraction

Horning, R. D., Goldenberg, B. L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 611 KB

english, 1989

4

27.6% efficiency (1 sun, air mass 1.5) monolithic Al0.37Ga0.63As/GaAs two-junction cascade solar cell with prismatic cover glass

Chung, B.-C., Virshup, G. F., Hikido, S., Kaminar, N. R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 561 KB

english, 1989

5

Nanometer-scale hole formation on graphite using a scanning tunneling microscope

Albrecht, T. R., Dovek, M. M., Kirk, M. D., Lang, C. A., Quate, C. F., Smith, D. P. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 694 KB

english, 1989

6

X-ray interference measurement of ultrathin semiconductor layers

Wie, C. R., Chen, J. C., Kim, H. M., Liu, P. L., Choi, Y.-W., Hwang, D. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 581 KB

english, 1989

7

Image formation in a superresolution phase conjugate scanning microscope

Johnson, K. M., Cathey, W. T., Mao, C. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 551 KB

english, 1989

8

Double waveguide in LiNbO3 by ion implantation

Chandler, P. J., Zhang, L., Townsend, P. D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 538 KB

english, 1989

9

Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells

Grundmann, M., Lienert, U., Bimberg, D., Fischer-Colbrie, A., Miller, J. N.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 635 KB

english, 1989

10

Resistance of very small area ohmic contacts on GaAs

Guéret, P., Buchmann, P., Daetwyler, K., Vettiger, P.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 540 KB

english, 1989

11

Zn diffusion enhancement of interdiffusion in a GaInAsP-InP heterostructure

Park, H.-H., Kang, B. K., Nam, E. S., Lee, Y. T., Kim, J. H., Kwon, O’D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 621 KB

english, 1989

12

New model for dopant redistribution at interfaces

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 532 KB

english, 1989

13

Differential photoconductive sampling with a resolution independent of carrier lifetime

Paslaski, J., Yariv, A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 622 KB

english, 1989

14

Theory and experiment of the parasitic-free frequency response measurement technique using facet-pumped optical modulation in semiconductor diode lasers

Lange, C. H., Su, C. B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 593 KB

english, 1989

15

Excimer and CO2 laser interactions with foamed polystyrene

Duley, W. W., Allan, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 632 KB

english, 1989

16

Helical resonators containing high Tc ceramic superconductors

Peterson, G. E., Stawicki, R. P., McN. Alford, N.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 596 KB

english, 1989

17

Growth of YBaCuO thin films on random and (100) aligned ZrO2 substrates

Li, Q., Meyer, O., Xi, X. X., Geerk, J., Linker, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 501 KB

english, 1989

18

Reflection high-energy electron diffraction intensity oscillation induced by electric current during Si epitaxial growth on Si (001) 2×1 surfaces

Nishimori, K., Tokutaka, H., Tamon, T., Kishida, S., Ishihara, N.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 478 KB

english, 1989

19

Growth of Al on GaAs(001): Observation of interfacial submonolayer structure

Donner, S. K., Blumenthal, Rik, Herman, J. L., Trehan, Rajender, Furman, Ehud, Winograd, Nicholas

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 607 KB

english, 1989

20

Interfacial work functions and extrinsic silicon infrared photocathodes

Coon, D. D., Devaty, R. P., Perera, A. G. U., Sherriff, R. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 574 KB

english, 1989

21

Effect of heat treatments on the electrical resistivity of Sb-doped amorphous Si films deposited by molecular beam on (100) Si

Komem, Y., Arienzo, M., Iyer, S. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 585 KB

english, 1989

22

High-frequency study of nonequilibrium transport in heterostructure bipolar transistors

Chen, Y. K., Levi, A. F. J., Nottenburg, R. N., Beton, P. H., Panish, M. B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 486 KB

english, 1989

23

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

Abernathy, C. R., Pearton, S. J., Caruso, R., Ren, F., Kovalchik, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 527 KB

english, 1989

24

Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy

Posthill, J. B., Markunas, R. J., Humphreys, T. P., Nemanich, R. J., Das, K., Parikh, N. R., Ross, P. L., Miner, C. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 597 KB

english, 1989

25

Elastic constants of sodalite Na4Al3Si3O12Cl

Li, Zhuang, Nevitt, M. V., Ghose, Subrata

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 389 KB

english, 1989

26

Dependence of optimal growth temperature on carbon content in hydrogenated amorphous silicon carbide alloys

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 551 KB

english, 1989

27

Transient grating dynamics in Cd1−xMnxTe diluted magnetic semiconductor superlattices

Harwit, Alex, Ritter, M. B., Hong, J. M., Awschalom, D. D., Chang, L. L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 543 KB

english, 1989

28

Enhanced corrosion resistance in noble metal containing amorphous chromium alloys

Tenhover, M., Shreve, G. A., Henderson, R. S., Lukco, D. B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 478 KB

english, 1989

29

Interference filters using indium phosphide-based epitaxial layers grown by metalorganic vapor phase epitaxy

Ritchie, S., Spurdens, P. C., Hewett, N. P., Aylett, M. R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 447 KB

english, 1989

30

Electron capture by DX centers in AlGaAs and related compounds

Izpura, I., Muñoz, E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 568 KB

english, 1989

31

Quantum-switched heterojunction bipolar transistor

Wu, Ming C., Tsang, W. T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 611 KB

english, 1989

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