Volume 55; Issue 2

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Applied Physics Letters
Volume 55; Issue 2

Applied Physics Letters

Volume 55; Issue 2

1

High-precision band-gap determination of Al0.48In0.52As with optical and structural methods

Oertel, D., Bimberg, D., Bauer, R. K., Carey, K. W.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 503 KB

english, 1989

2

Electroluminescence from sulfur impurities in a p-n junction formed in epitaxial silicon

Bradfield, P. L., Brown, T. G., Hall, D. G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 538 KB

english, 1989

3

Epitaxial growth of thin films of BaTiO3 using excimer laser ablation

Davis, G. M., Gower, M. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 649 KB

english, 1989

4

Observation of soliton-like envelope modulations generated in an anisotropic quartz plate by metallic interdigital transducers

M. Planat, M. Hoummady

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 545 KB

english, 1989

5

Scanning capacitance microscopy on a 25 nm scale

C. C. Williams, W. P. Hough, S. A. Rishton

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 587 KB

english, 1989

6

Formation of quasicrystals by mechanical alloying

Eckert, J., Schultz, L., Urban, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 542 KB

english, 1989

7

Fast anisotropic etching of silicon in an inductively coupled plasma reactor

Perry, A. J., Boswell, R. W.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 578 KB

english, 1989

8

New type of compensation wall in ferrimagnetic double layers

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 476 KB

english, 1989

9

Strong enhancement of the photoluminescence of n-type indium phosphide under a cathodic polarization

Etcheberry, A., Vigneron, J., Sculfort, J. L., Gautron, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 541 KB

english, 1989

10

Gallium phosphide microlenses by mass transport

Liau, Z. L., Diadiuk, V., Walpole, J. N., Mull, D. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 741 KB

english, 1989

11

Magnetization and flux creep in textured Bi(Pb)-Sr-Ca-Cu-O oxide superconductors

Kumakura, H., Togano, K., Yanagisawa, E., Maeda, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 512 KB

english, 1989

12

Influence of the DX center on the capacitance-voltage characteristics of δ-doped GaAs

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 588 KB

english, 1989

13

Universal resputtering curve

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 565 KB

english, 1989

14

YbBa2Cu3O7 epitaxial films grown by a Ag-enhanced liquid gas solidification process

Chen, H. S., Kortan, A. R., Thiel, F. A., Kimerling, L. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 550 KB

english, 1989

15

Capture cross section of Si-SiO2 interface states generated during electron injection

Vuillaume, D., Bouchakour, R., Jourdain, M., Bourgoin, J. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 637 KB

english, 1989

16

Nondestructive multiple breakdown events in very thin SiO2 films

Suñé, J., Farrés, E., Placencia, I., Barniol, N., Martín, F., Aymerich, X.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 522 KB

english, 1989

17

Low-temperature growth of HgTe and HgCdTe using methylallyltelluride

Ghandhi, S. K., Bhat, I. B., Ehsani, H., Nucciarone, D., Miller, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 553 KB

english, 1989

18

Generation of picosecond electrical pulses by a pulse-forming optoelectronic device

Sano, E., Nagatsuma, T., Shibata, T., Iwata, A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 427 KB

english, 1989

19

Erratum: Exchange interactions in quantum well subbands [Appl. Phys. Lett. 53, 1931 (1988)]

Bandara, K. M. S. V., Coon, D. D., O, Byungsung, Lin, Y. F., Francombe, M. H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 210 KB

english, 1989

20

Preparation of Y-Ba-Cu-O high Tc superconducting thin films by plasma-assisted organometallic chemical vapor deposition

Bai, G. R., Tao, W., Wang, R., Xie, L. M., Zhang, X. K., Huang, J., Qian, C. T., Zhou, W. K., Ye, C. Q., Ren, J. G., Li, Y. Q., Luo, W. M., Chen, J. B.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 500 KB

english, 1989

21

Grain growth and size distribution in ion-irradiated chemical vapor deposited amorphous silicon

Spinella, C., Lombardo, S., Campisano, S. U.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 515 KB

english, 1989

22

Magneto-optics of a quasi-zero-dimensional electron gas

Liu, C. T., Nakamura, K., Tsui, D. C., Ismail, K., Antoniadis, D. A., Smith, Henry I.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 520 KB

english, 1989

23

Lattice site location of europium in LiNbO3 by Rutherford backscattering channeling experiments

Rebouta, L., Soares, J. C., da Silva, M. F., Sanz-García, J. A., Diéguez, E., Agulló-López, F.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 401 KB

english, 1989

24

Migration-enhanced epitaxy on a (111)B oriented GaAs substrate

Imamoto, H., Sato, F., Imanaka, K., Shimura, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 406 KB

english, 1989

25

Electron beam lithography using surface reactions with ClF3

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 444 KB

english, 1989

26

High doping of phosphorus in Si using gas source molecular beam epitaxy

Hirayama, Hiroyuki, Tatsumi, Toru

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 473 KB

english, 1989

27

Y-Ba-Cu-O superconducting films produced by long-pulse laser vaporization

Balooch, M., Olander, D. R., Russo, R. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 564 KB

english, 1989

28

Laser bilayer etching of GaAs surfaces

Maki, P. A., Ehrlich, D. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 585 KB

english, 1989

29

Far-infrared photovoltaic effect in a Landau level diode

Liu, C. T., Kane, B. E., Tsui, D. C., Weimann, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 502 KB

english, 1989

30

Depolarization field and ionic effects on the bistability of surface-stabilized ferroelectric liquid-crystal devices

Yang, K. H., Chieu, T. C., Osofsky, S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 502 KB

english, 1989

31

Observation of electron resonant tunneling in a lateral dual-gate resonant tunneling field-effect transistor

Chou, S. Y., Allee, D. R., Pease, R. F. W., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 554 KB

english, 1989

32

Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation

Rogers, W. Boyd, Massoud, Hisham Z.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 668 KB

english, 1989

33

High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy

Nottenburg, R. N., Chen, Y. K., Tanbun-Ek, T., Logan, R. A., Humphrey, D. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 510 KB

english, 1989

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