Volume 55; Issue 20

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Applied Physics Letters
Volume 55; Issue 20

Applied Physics Letters

Volume 55; Issue 20

1

Bessel beam ultrasonic transducer: Fabrication method and experimental results

Hsu, D. K., Margetan, F. J., Thompson, D. O.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 624 KB

english, 1989

2

Structure of hexagonal and cubic CdS heteroepitaxial layers on GaAs studied by transmission electron microscopy

Cullis, A. G., Smith, P. W., Parbrook, P. J., Cockayne, B., Wright, P. J., Williams, G. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 782 KB

english, 1989

3

In situ growth rate measurements during molecular beam epitaxy using an optical pyrometer

SpringThorpe, A. J., Humphreys, T. P., Majeed, A., Moore, W. T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 512 KB

english, 1989

4

Performance limitations of GaAs/AlGaAs infrared superlattices

Kinch, M. A., Yariv, A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 514 KB

english, 1989

5

Common path scanning heterodyne optical profilometer for absolute phase measurement

Offside, M. J., Somekh, M. G., See, C. W.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 504 KB

english, 1989

6

Spatial imaging of the critical current density in epitaxial Y1Ba2Cu3O7 films

Gross, R., Hipler, K., Mannhart, J., Huebener, R. P., Chaudhari, P., Dimos, D., Tsuei, C. C., Schubert, J., Poppe, U.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 655 KB

english, 1989

7

High-power, narrow single-lobe operation from 20-element phase-locked arrays of antiguides

Mawst, L. J., Botez, D., Jansen, M., Roth, T. J., Peterson, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 618 KB

english, 1989

8

Response to ‘‘Comment on ‘Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron miscroscopy’ ’’ [Appl. Phys. Lett. 55, 2147 (1989)]

Reithmaier, J.-P., Cerva, H., Lösch, R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 459 KB

english, 1989

9

Wiggler focused relativistic sheet beam propagation in a planar free-electron laser configuration

Radack, D. J., Booske, J. H., Carmel, Y., Destler, W. W.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 624 KB

english, 1989

10

Superconducting (Bi,Pb)-Ca-Sr-Cu-O thin films prepared in situ by laser ablation

Ivanov, Z., Brorsson, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 559 KB

english, 1989

11

Analysis of discontinuities in quantum waveguide structures

Weisshaar, A., Lary, J., Goodnick, S. M., Tripathi, V. K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 581 KB

english, 1989

12

Single-crystal growth of CoSi2 (110) on Si (110)

Yalisove, S. M., Eaglesham, D. J., Tung, R. T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 701 KB

english, 1989

13

Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs

George, T., Weber, E. R., Nozaki, S., Murray, J. J., Wu, A. T., Umeno, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 563 KB

english, 1989

14

Scanning tunneling microscopy investigations of the local structure of Tl2Ba2CaCu2O8 single crystals

Wu, X. L., Lieber, C. M., Ginley, D. S., Baughman, R. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 640 KB

english, 1989

15

Switching effect in organic charge transfer complex crystals

Iwasa, Y., Koda, T., Tokura, Y., Koshihara, S., Iwasawa, N., Saito, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 568 KB

english, 1989

16

1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy

Galtier, P., Pocholle, J. P., Charasse, M. N., de Cremoux, B., Hirtz, J. P., Groussin, B., Benyattou, T., Guillot, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 556 KB

english, 1989

17

Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP

Loualiche, S., Ginudi, A., Le Corre, A., Lecrosnier, D., Vaudry, C., Henry, L., Guillemot, C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 484 KB

english, 1989

18

Zinc-blende MnTe: Epilayers and quantum well structures

Durbin, S. M., Han, J., O, Sungki, Kobayashi, M., Menke, D. R., Gunshor, R. L., Fu, Q., Pelekanos, N., Nurmikko, A. V., Li, D., Gonsalves, J., Otsuka, N.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 581 KB

english, 1989

19

Thermal characteristics of a split-disk geometry glass laser amplifier

Kim, Byung-Tai, Nakatsuka, Masahiro, Kanabe, Tadashi, Nakai, Sadao

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 478 KB

english, 1989

20

Transition metal silicide precipitation in silicon induced by rapid thermal processing and free-surface gettering

Kola, R. R., Rozgonyi, G. A., Li, J., Rogers, W. B., Tan, T. Y., Bean, K. E., Lindberg, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 640 KB

english, 1989

21

Picosecond laser sputtering of sapphire at 266 nm

Tam, A. C., Brand, J. L., Cheng, D. C., Zapka, W.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 581 KB

english, 1989

22

Model for the diffusion of zinc in gallium arsenide

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 570 KB

english, 1989

23

New shallow donors in high-purity silicon single crystal

Yu, Zhiyi, Huang, Y. X., Shen, S. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 483 KB

english, 1989

24

One electron in an orthogonalized cylindrical Penning trap

Tan, Joseph, Gabrielse, Gerald

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 504 KB

english, 1989

25

Nanosecond optical quenching of photoconductivity in a bulk GaAs switch

Mazzola, M. S., Schoenbach, K. H., Lakdawala, V. K., Ko, S. T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 523 KB

english, 1989

26

Direct areal density measurement by activation technique for plastic hollow shell implosion experiments

Nakaishi, H., Miyanaga, N., Setsuhara, Y., Azechi, H., Takagi, M., Saito, M., Yamanaka, M., Yamanaka, T., Nakai, S., Kobayashi, K., Kimura, I.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 625 KB

english, 1989

27

Molecular beam epitaxy of superconducting (Rb,Ba)BiO3

Hellman, E. S., Hartford, E. H., Fleming, R. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 643 KB

english, 1989

28

New-type xerographic multiduplication using organopolysilane-based memory photoreceptor drawn by ultraviolet image exposure

Yokoyama, Kenji, Yokoyama, Masaaki

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 524 KB

english, 1989

29

Properties of sputtered superconducting films of Bi2Sr2CaCu2Ox made by low-temperature in situ growth

Kampwirth, R. T., Andersen, P. H., McDonald, D. B., Miller, D. J., Gray, K. E., Sungaila, Z. F., Balachandran, U., Wagner, A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 654 KB

english, 1989

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