Volume 55; Issue 24

Main
Applied Physics Letters
Volume 55; Issue 24

Applied Physics Letters

Volume 55; Issue 24

1

High-resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams

Ikarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 674 KB

english, 1989

2

Conformal vapor phase epitaxy

Pribat, D., Karapiperis, L., Collet, C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 587 KB

english, 1989

3

Radiation-induced formation of cavities in amorphous germanium

Wang, L. M., Birtcher, R. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 734 KB

english, 1989

4

Ethyldimethylindium for the growth of InGaAs-GaAs strained-layer lasers by metalorganic chemical vapor deposition

York, P. K., Beernink, K. J., Kim, J., Coleman, J. J., Fernández, G. E., Wayman, C. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 577 KB

english, 1989

5

Determination of tilted superlattice structure by atomic force microscopy

Chalmers, S. A., Gossard, A. C., Weisenhorn, A. L., Gould, S. A. C., Drake, B., Hansma, P. K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 680 KB

english, 1989

6

Growth of InGaAs in a hot-walled vapor phase epitaxy reactor using a trimethylarsenic source

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 584 KB

english, 1989

7

Au-Ag ion mixing rate—disagreement with theory resolved

Bo̸rgesen, P., Lilienfeld, D. A., Johnson, H. H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 584 KB

english, 1989

8

Homogeneous width of exciton absorption spectra in CuCl microcrystals

Masumoto, Yasuaki, Wamura, Tetsuro, Iwaki, Atsushi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 604 KB

english, 1989

9

Fermi level movement for n- and p-GaAs interfaces: Effects of temperature and dopant concentration

Anderson, Steven G., Aldao, C. M., Waddill, G. D., Vitomirov, I. M., Capasso, C., Weaver, J. H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 635 KB

english, 1989

10

Electrical activation curve of silicon implanted in GaAs

Morrow, Richard A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 573 KB

english, 1989

11

Characterization of cladded glass fibers using acoustic microscopy

Jen, C. K., Neron, C., Bussiere, J. F., Li, L., Lowe, R., Kushibiki, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 629 KB

english, 1989

12

Enhanced magneto-optic Kerr effects in thin magnetic/metallic layered structures

McGahan, William A., Chen, Liang-Yao, Shan, Z. S., Sellmyer, D. J., Woollam, John A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 519 KB

english, 1989

13

New x-ray source for lithography

Sprangle, P., Hafizi, B., Mako, F.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 492 KB

english, 1989

14

Reassessment of the rate constant for electron collision quenching of KrF(B)

Kushner, Mark J., Hanson, David E., Schneider, Barry I.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 606 KB

english, 1989

15

Evaluation of AlOx barrier thickness in Nb Josephson junctions using anodization profiles

Imamura, Takeshi, Hasuo, Shinya

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 513 KB

english, 1989

16

Identification of hole transitions at the neutral interstitial manganese center in silicon

Bever, T., Emanuelsson, P., Kleverman, M., Grimmeiss, H. G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 556 KB

english, 1989

17

Etch rate enhancement of photoresist in nitrogen-containing plasmas

Premachandran, V.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 459 KB

english, 1989

18

Magnetic microstructure of the (0001) surface of hcp cobalt

Unguris, J., Scheinfein, M. R., Celotta, R. J., Pierce, D. T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 516 KB

english, 1989

19

Quasi-ballistic resonant tunneling of minority electrons into the excited states of a quantum well

Vengurlekar, A. S., Capasso, F., Sen, S., Hutchinson, A. L., Chu, S. N. G., Sivco, D., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 602 KB

english, 1989

20

Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy

Zalm, P. C., van de Walle, G. F. A., Gravesteijn, D. J., van Gorkum, A. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 512 KB

english, 1989

21

Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers

Tai, K., Fischer, R. J., Seabury, C. W., Olsson, N. A., Huo, T-C. D., Ota, Y., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 477 KB

english, 1989

22

New model for damage accumulation in Si during self-ion irradiation

Holland, O. W., Pennycook, S. J., Albert, Gerald L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 624 KB

english, 1989

23

Scaling law for temporal dispersion of a short electron pulse across a diode in space-charge regime

Girardeau-Montaut, C., Girardeau-Montaut, J. P., Leboutet, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 409 KB

english, 1989

24

Interface atomic structure of Si/SiO2/Si formed by molecular beam deposition

Sakai, Akira, Tatsumi, Toru, Niino, Taeko, Hirayama, Hiroyuki, Ishida, Koichi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 636 KB

english, 1989

25

Initial stages of growth of GaAs on silicon (211) substrates by migration-enhanced molecular beam epitaxy

Fotiadis, L., Kaplan, R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 564 KB

english, 1989

26

Photothermal deflection spectroscopy of heat-treated GaAs, InP, and InGaAsP alloys

Kumar, A. Shailendra, Narasimhan, K. L., Rajalakshmi, R., Chandvankar, S. S., Arora, B. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 359 KB

english, 1989

27

Electrically controlled surface bistability in nematic liquid crystals

Barberi, R., Boix, M., Durand, G.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 543 KB

english, 1989

28

Γ- and X-band contributions to nonresonant tunneling in GaAs/Al0.35Ga0.65As double quantum wells

Alexander, M. G. W., Nido, M., Reimann, K., Rühle, W. W., Köhler, K.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 642 KB

english, 1989

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@1delivery.pm

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски