Volume 55; Issue 8

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Applied Physics Letters
Volume 55; Issue 8

Applied Physics Letters

Volume 55; Issue 8

1

GaAs metal‐semiconductor field‐effect transistor with extremely low resistance nonalloyed ohmic contacts using an InAs/GaAs superlattice

Kumar, N. S., Chyi, J.‐I., Peng, C. K., Morkoc, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 441 KB

english, 1989

2

cw diode pumped 2.3 Î¼m fiber laser

Allen, R., Esterowitz, L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 499 KB

english, 1989

3

Heavily boron-doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2 source

T. L. Lin, R. W. Fathauer, P. J. Grunthaner

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 619 KB

english, 1989

4

On-line determination of alloy composition during ternary III/V molecular beam epitaxy

Tsao, J. Y., Brennan, T. M., Klem, J. F., Hammons, B. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 575 KB

english, 1989

5

High-power and high-speed 1.3 μm V-grooved inner-stripe lasers with new semi-insulating current confinement structures on p-InP substrates

Wada, H., Horikawa, H., Matsui, Y., Ogawa, Y., Kawai, Y.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 503 KB

english, 1989

6

Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces

Suemune, I., Kunitsugu, Y., Kan, Y., Yamanishi, M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 638 KB

english, 1989

7

Incident wavelength dependence of photocurrent bistability by external bias voltage control in a quantum well p-i-n diode

Tokuda, Yasunori, Kanamoto, Kyozo, Tsukada, Noriaki

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 504 KB

english, 1989

8

Direct observation of atomic planes in epitaxial multilayers by anodization spectroscopy

Blamire, M. G., Huang, K. H., Somekh, R. E., Kirk, E. C. G., Morris, G. W., Evetts, J. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 550 KB

english, 1989

9

Annealing in a PbO atmosphere for high Tc superconductivity of Bi-Sr-Ca-Cu-O films

Takano, Akihiro, Yoshimoto, Mamoru, Koinuma, Hideomi, Nagata, Hirotoshi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 506 KB

english, 1989

10

Microvoids in amorphous Si1−xCx:H alloys studied by small-angle x-ray scattering

Williamson, D. L., Mahan, A. H., Nelson, B. P., Crandall, R. S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 682 KB

english, 1989

11

Electroabsorption spectroscopy of amorphous Si/SiC quantum well structures

Hattori, K., Tsujishita, M., Okamoto, H., Hamakawa, Y.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 665 KB

english, 1989

12

Ballistic-electron-emission microscopy investigation of Schottky barrier interface formation

Hecht, M. H., Bell, L. D., Kaiser, W. J., Grunthaner, F. J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 746 KB

english, 1989

13

Raman scattering determination of strain in CdTe/ZnTe superlattices

Jackson, M. K., Miles, R. H., McGill, T. C., Faurie, J. P.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 651 KB

english, 1989

14

Disordering of ZnSe/ZnS strained-layer superlattices by Si ion implantation

Saitoh, Tohru, Yokogawa, Toshiya, Narusawa, Tadashi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 504 KB

english, 1989

15

Analysis of transients in pulse modulated semiconductor lasers biased near threshold

Mecozzi, A., Spano, P., D’Ottavi, A., Piazzolla, S.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 625 KB

english, 1989

16

Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures

Tabatabaie, N., Meynadier, M.-H., Nahory, R. E., Harbison, J. P., Florez, L. T.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 650 KB

english, 1989

17

Aluminum selective area deposition on Si using diethylaluminumchloride

Sasaoka, C., Mori, K., Kato, Y., Usui, A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 469 KB

english, 1989

18

Detecting transition regions in magneto-optical disk systems

Mansuripur, Masud

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 394 KB

english, 1989

19

Ultraviolet laser-induced low-temperature epitaxy of GaP

Sudarsan, U., Cody, N. W., Dosluoglu, T., Solanki, R.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 517 KB

english, 1989

20

Heterojunction field-effect transistors based on AlGaSb/InAs

Luo, L. F., Beresford, R., Wang, W. I., Munekata, H.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 498 KB

english, 1989

21

Solid phase epitaxy of a Ge-Si alloy on [111] Si through a Pd2Si layer

Hong, Q. Z., Zhu, J. G., Mayer, J. W.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 473 KB

english, 1989

22

Hole tunneling times in GaAs/AlAs double-barrier structures

Yu, E. T., Jackson, M. K., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 492 KB

english, 1989

23

Effect of chopping on laser penetration of metal targets

Kim, H. S., Domankevitz, Y., Kwok, H. S., Copley, J. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 532 KB

english, 1989

24

Comment on ‘‘Physical meaning of electron capture kinetics on DX centers’’ [Appl. Phys. Lett. 53, 1841 (1988)]

Caswell, N. S., Mooney, P. M.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 470 KB

english, 1989

25

Study of hydrogenation in GaSb/AlSb multiple quantum well structures by time-resolved luminescence

Capizzi, M., Coluzza, C., Frova, A., Cebulla, U., Forchel, A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 518 KB

english, 1989

26

Broadband long-wavelength operation (9700 Å≳λ≳8700 Å) of AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers in an external grating cavity

Hall, D. C., Major, J. S., Holonyak, N., Gavrilovic, P., Meehan, K., Stutius, W., Williams, J. E.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 546 KB

english, 1989

27

High-frequency performance of InGaAs metal-semiconductor-metal photodetectors at 1.55 and 1.3 μm wavelengths

Soole, J. B. D., Schumacher, H., LeBlanc, H. P., Bhat, R., Koza, M. A.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 596 KB

english, 1989

28

Tunable stimulated emission of radiation in GaAs doping superlattices

Schubert, E. F., van der Ziel, J. P., Cunningham, J. E., Harris, T. D.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 600 KB

english, 1989

29

Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy

Chen, W. K., Chen, J. F., Chen, J. C., Kim, H. M., Anthony, L., Wie, C. R., Liu, P. L.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 483 KB

english, 1989

30

Quasi-nondestructive readout of holographically stored information in photorefractive Bi12SiO20 crystals

Delboulbe, A., Fromont, C., Herriau, J. P., Mallick, S., Huignard, J. P.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 580 KB

english, 1989

31

Observation of competing arsenic removal channels in the Cl2+GaAs reaction

Hou, Hui-qi, Zhang, Zhuangjian, Chen, Shanhua, Su, Chaochin, Yan, Weiring, Vernon, Matt

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 645 KB

english, 1989

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