Volume 56; Issue 1

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Applied Physics Letters
Volume 56; Issue 1

Applied Physics Letters

Volume 56; Issue 1

1

Self‐mode‐locking of a semiconductor laser using positive feedback

Derickson, D. J., Helkey, R. J., Mar, A., Morton, P. A., Bowers, J. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 487 KB

english, 1990

2

Evaluation of carrier distributions in a depletion region of semiconductor measured by a capacitance-voltage profile method

Yeo, Y. K., Gainer, G. H., Kim, Jong Hyun, Hengehold, R. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 618 KB

english, 1990

3

Photo-oxidation of GaAs for in situ patterned-mask formation prior to chlorine gas etching

Taneya, M., Akita, K., Hidaka, H., Sugimoto, Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 613 KB

english, 1990

4

Plasma oxidation of SO2

Sardja, I., Dhali, S. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 423 KB

english, 1990

5

Cyclotron resonance measurements of the high electron mobility transistor

Chang, Chian-Sern, Fetterman, Harold R., Green, Arold

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 514 KB

english, 1990

6

Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates

Yamaguchi, Masafumi, Tachikawa, Masami, Sugo, Mitsuru, Kondo, Susumu, Itoh, Yoshio

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 512 KB

english, 1990

7

Variable resonator (variable Q) photopumped phonon-assisted quantum well laser operation

Holonyak, N., Nam, D. W., Vesely, E. J., Guido, L. J., Gavrilovic, P., Meehan, K., Stutius, W., Williams, J. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 569 KB

english, 1990

8

Logic inverter based on side mode injection locking in semiconductor lasers

Provost, J. G., Frey, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 506 KB

english, 1990

9

Impurity-induced disordering in fractional-layer growth on a (001) vicinal surface by metalorganic chemical vapor deposition

Saito, H., Fukui, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 473 KB

english, 1990

10

Misfit dislocation multiplication processes in Si1−xGex alloys for x

Tuppen, C. G., Gibbings, C. J., Hockly, M., Roberts, S. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 684 KB

english, 1990

11

Binary-optics miniature Talbot cavities for laser beam addition

Leger, J. R., Griswold, M. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 530 KB

english, 1990

12

Rapid thermal oxidation of GeSi strained layers

Nayak, D., Kamjoo, K., Woo, J. C. S., Park, J. S., Wang, K. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 637 KB

english, 1990

13

Fabrication of channel waveguides in polydiacetylenes: Composite diffused glass/polymer structures

Schlotter, N. E., Jackel, J. L., Townsend, Paul D., Baker, Gregory L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 533 KB

english, 1990

14

Electrical and optical evidence of resonant tunneling of holes in an n+in+ double-barrier diode structure under illumination

Vodjdani, N., Co^te, D., Thomas, D., Sermage, B., Bois, P., Costard, E., Nagle, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 571 KB

english, 1990

15

Use of cathodoluminescence microscopy to distinguish semiconducting from metallic phases in high Tc superconductors

Miller, J. H., Hunn, J. D., Holder, S. L., DiBianca, A. N., Bagnell, C. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 700 KB

english, 1990

16

TE/TM mode selective channel waveguides in GaAs/AlAs superlattice fabricated by SiO2 cap disordering

Suzuki, Yasuhiro, Iwamura, Hidetoshi, Mikami, Osamu

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 518 KB

english, 1990

17

Morphology and distribution of atomic steps on Si (001) studied with scanning tunneling microscopy

Dijkkamp, D., Hoeven, A. J., van Loenen, E. J., Lenssinck, J. M., Dieleman, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 752 KB

english, 1990

18

Granular Fe in a metallic matrix

Childress, J. R., Chien, C. L., Nathan, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 597 KB

english, 1990

19

Large magnetization induced in single crystalline iron films by high-dose nitrogen implantation

Nakajima, Kensuke, Okamoto, Shoichi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 474 KB

english, 1990

20

Magnetoresistance measurements of doping symmetry and strain effects in GaSb-AlSb quantum wells

Hansen, W., Smith, T. P., Piao, J., Beresford, R., Wang, W. I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 514 KB

english, 1990

21

Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy

Turco, F. S., Tamargo, M. C., Hwang, D. M., Nahory, R. E., Werner, J., Kash, K., Kapon, E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 565 KB

english, 1990

22

Demonstration of a grating-surface-emitting diode laser with low-threshold current density

Carlson, N. W., Evans, G. A., Bour, D. P., Liew, S. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 515 KB

english, 1990

23

Influence of spacer layer thickness on the current-voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes

Yoo, H. M., Goodnick, S. M., Arthur, J. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 525 KB

english, 1990

24

Metal/(100) GaAs interface: Case for a metal-insulator-semiconductor-like structure

Freeouf, J. L., Woodall, J. M., Brillson, L. J., Viturro, R. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 575 KB

english, 1990

25

Gain characteristics of strained quantum well lasers

Welch, D. F., Streifer, W., Schaus, C. F., Sun, S., Gourley, P. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 457 KB

english, 1990

26

Concentration dependence and interfacial instabilities during ion beam annealing of arsenic-doped silicon

Priolo, Francesco, Rimini, Emanuele, Spinella, Corrado, Ferla, Giuseppe

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 544 KB

english, 1990

27

Observation of AlGaAs/GaAs multiquantum well structure by scanning tunneling microscopy

Gómez-Rodríguez, J. M., Baró, A. M., Silveira, J. P., Vázquez, M., González, Y., Briones, F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 600 KB

english, 1990

28

Hydrogen-accelerated thermal donor formation in Czochralski silicon

Stein, H. J., Hahn, S. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 538 KB

english, 1990

29

Study of the interface of undoped and p-doped ZnSe with GaAs and AlAs

Kassel, L., Abad, H., Garland, J. W., Raccah, P. M., Potts, J. E., Haase, M. A., Cheng, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 604 KB

english, 1990

30

Carrier capture in intermixed quantum wires with sharp lateral confinement

Leier, H., Forchel, A., Maile, B. E., Mayer, G., Hommel, J., Weimann, G., Schlapp, W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 594 KB

english, 1990

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