Volume 56; Issue 14

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Applied Physics Letters
Volume 56; Issue 14

Applied Physics Letters

Volume 56; Issue 14

1

Ultrashallow, high doping of boron using molecular layer doping

Nishizawa, J., Aoki, K., Akamine, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 480 KB

english, 1990

2

Quantum well superluminescent diode with very wide emission spectrum

Chen, T. R., Eng, L., Zhuang, Y. H., Yariv, A., Kwong, N. S., Chen, P. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 448 KB

english, 1990

3

Role of two-photon absorption in ultrafast semiconductor optical switching devices

Aitchison, J. S., Oliver, M. K., Kapon, E., Colas, E., Smith, P. W. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 542 KB

english, 1990

4

Epitaxial growth of CeO2 layers on silicon

Inoue, T., Yamamoto, Y., Koyama, S., Suzuki, S., Ueda, Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 466 KB

english, 1990

5

Rapid thermal anneal of hydrogen-implanted metal-silicon nitride-silicon dioxide-silicon structure

Panwar, B. S., Bhattacharyya, A. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 501 KB

english, 1990

6

Electroluminescence and high-field domains in GaAs/AlGaAs superlattices

Helm, M., Golub, J. E., Colas, E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 585 KB

english, 1990

7

Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films

Curry, Sean E., Lenahan, P. M., Krick, D. T., Kanicki, J., Kirk, C. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 639 KB

english, 1990

8

Vapor-deposited superconducting YBa2Cu3O7−δ lines: Effect of thickness and width on morphology

Phillips, J. R., Mayer, J. W., Martin, J. A., Nastasi, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 745 KB

english, 1990

9

Electrical and structural properties of shallow p+ junctions formed by dual (Ga/B) ion implantation

Mei, P., Jalali, B., Yang, E. S., Stoffel, N. G., Hart, D. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 532 KB

english, 1990

10

Direct observation of glide dislocations in a KCl crystal by the light scattering method

Kataoka, T., Ohji, H., Kishida, K., Azuma, K., Yamada, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 638 KB

english, 1990

11

Control of internal stress and Young’s modulus of Si3N4 and polycrystalline silicon thin films using the ion implantation technique

Tabata, Osamu, Sugiyama, Susumu, Takigawa, Mitsuharu

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 555 KB

english, 1990

12

Intersubband infrared absorption in GexSi1−x/Si superlattice by photocurrent measurement

Karunasiri, R. P. G., Park, J. S., Wang, K. L., Cheng, Li-Jen

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 573 KB

english, 1990

13

In situ low-temperature deposition and properties of Bi(Pb)-Sr-Ca-Cu-O thin films prepared by magnetron sputtering

Jedamzik, D., Barnard, B. R., Harrison, M. R., Freeman, W. G., Howard, P. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 538 KB

english, 1990

14

45° waveguide isolators with phase mismatch

Dammann, H., Pross, E., Rabe, G., Tolksdorf, W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 618 KB

english, 1990

15

Microstructure of epitactically grown GaAs/ErAs/GaAs

Zhu, Jane G., Carter, C. Barry, Palmstro̸m, Chris J., Mounier, Suzanne

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 742 KB

english, 1990

16

Preparation of highly coercive Sm-Fe-Ti by rapid quenching

Katter, M., Wecker, J., Schultz, L., Grössinger, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 601 KB

english, 1990

17

Growth of improved quality 3C-SiC films on 6H-SiC substrates

Powell, J. A., Larkin, D. J., Matus, L. G., Choyke, W. J., Bradshaw, J. L., Henderson, L., Yoganathan, M., Yang, J., Pirouz, P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 670 KB

english, 1990

18

Role of substrate threading dislocation density in relaxation of highly strained InGaAs/GaAs quantum well structures

Klem, J. F., Fu, W. S., Gourley, P. L., Jones, E. D., Brennan, T. M., Lott, J. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 623 KB

english, 1990

19

Surface-enhanced Raman spectroscopy of chemical vapor deposited diamond films

Knight, Diane S., Weimer, Ronald, Pilione, Lawrence, White, William B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 418 KB

english, 1990

20

Double-heterostructure optoelectronic switch as a single quantum well laser

Taylor, G. W., Cooke, P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 520 KB

english, 1990

21

In situ detection of methyl radicals in laser chemical vapor deposition environment by resonance ionization spectroscopy

Okada, Tatsuo, Andou, Hiroyuki, Moriyama, Yoshio, Maeda, Mitsuo

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 439 KB

english, 1990

22

Effects of rapid thermal annealing and SiO2 encapsulation on GaInAs/AlInAs heterostructures

O’Brien, S., Shealy, J. R., Bour, D. P., Elbaum, L., Chi, J. Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 533 KB

english, 1990

23

Directional etching of Si with perfect selectivity to SiO2 using an ultraclean electron cyclotron resonance plasma

Matsuura, Takashi, Uetake, Hiroaki, Ohmi, Tadahiro, Murota, Junichi, Fukuda, Koichi, Mikoshiba, Nobuo, Kawashima, Tadashi, Yamashita, Yoshihiro

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 601 KB

english, 1990

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