Volume 56; Issue 18

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Applied Physics Letters
Volume 56; Issue 18

Applied Physics Letters

Volume 56; Issue 18

1

Superconductor film growth on LaGaO3 substrates by liquid phase epitaxy

Belt, R. F., Ings, J., Diercks, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 283 KB

english, 1990

2

Femtosecond gain dynamics in InGaAsP optical amplifiers

Hall, K. L., Mark, J., Ippen, E. P., Eisenstein, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 541 KB

english, 1990

3

Simple reflection technique for measuring the electro-optic coefficient of poled polymers

Teng, C. C., Man, H. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 475 KB

english, 1990

4

Alignment of liquid crystal on a polarizing metal film

Armitage Development Division, David

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 438 KB

english, 1990

5

Absence of 13C incorporation in 13CCl4-doped InP grown by metalorganic chemical vapor deposition

Cunningham, B. T., Baker, J. E., Stockman, S. A., Stillman, G. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 602 KB

english, 1990

6

Heteroepitaxial growth of InxGa1−xAs on graphoepitaxially grown germanium

Kanata, T., Takakura, H., Matsunaga, M., Hamakawa, Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 576 KB

english, 1990

7

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

Larsson, A., Cody, J., Forouhar, S., Lang, R. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 568 KB

english, 1990

8

Design of superlattice termination layers

Coon, D. D., Sorar, E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 549 KB

english, 1990

9

Holographic image storage in iron-doped lithium niobate fibers

Yoshinaga, Hisao, Kitayama, Ken-ichi, Oguri, Hitoshi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 469 KB

english, 1990

10

Deposition of diamond films at low pressures and their characterization by positron annihilation, Raman, scanning electron microscopy, and x-ray photoelectron spectroscopy

Sharma, S. C., Dark, C. A., Hyer, R. C., Green, M., Black, T. D., Chourasia, A. R., Chopra, D. R., Mishra, K. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 642 KB

english, 1990

11

Balanced phase matching in segmented KTiOPO4 waveguides

Bierlein, J. D., Laubacher, D. B., Brown, J. B., van der Poel, C. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 636 KB

english, 1990

12

Trajectory domains in a wide-well double-barrier tunneling structure in crossed electric and magnetic fields

Martin, K. P., Ben Amor, S., Rascol, J. J. L., Higgins, R. J., Potter, R. C., Hier, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 599 KB

english, 1990

13

High-brightness pseudospark-produced electron beam

Boggasch, E., Rhee, M. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 537 KB

english, 1990

14

Layer disordering of n-type (Se) and p-type (C) AlxGa1−xAs-GaAs superlattices by S diffusion

Major, J. S., Dallesasse, J. M., Guido, L. J., Baker, J. E., Plano, W. E., Sugg, A. R., Vesely, E. J., Richard, T. A., Holonyak, N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 680 KB

english, 1990

15

Imaging metal atoms in air and water using the atomic force microscope

Manne, S., Butt, H. J., Gould, S. A. C., Hansma, P. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 529 KB

english, 1990

16

Intrinsic bistability in an optically pumped quantum well structure

Zrenner, A., Worlock, J. M., Florez, L. T., Harbison, J. P., Lyon, S. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 509 KB

english, 1990

17

In situ laser deposition of Y1Ba2Cu3O7−x high Tc superconducting thin films with SrTiO3 underlayers

Wiener-Avnear, E., Kerber, G. L., McFall, J. E., Spargo, J. W., Toth, A. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 589 KB

english, 1990

18

Photothermal imaging of copper-decorated grain boundary in silicon

Inglehart, L. J., Broniatowski, A., Fournier, D., Boccara, A. C., Lepoutre, F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 460 KB

english, 1990

19

Erratum: High-pressure vapor transport of ZnGeP2 [Appl. Phys. Lett. 56, 271 (1990)]

Xing, G. C., Bachmann, K. J., Posthill, J. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 246 KB

english, 1990

20

Fabrication of Tl-Ca-Ba-Cu-O superconducting thin films on LaAlO3 substrates

Subramanyam, G., Radpour, F., Kapoor, V. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 495 KB

english, 1990

21

Transient diffusion of low-concentration B in Si due to 29Si implantation damage

Packan, P. A., Plummer, J. D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 483 KB

english, 1990

22

Erratum: Role of in situ rapid isothermal processing in the solid phase epitaxial growth of II-A fluoride films on (100) and (111) InP [Appl. Phys. Lett. 56, 247 (1990)]

Singh, R., Thakur, R. P. S., Kumar, A., Chou, P., Narayan, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 246 KB

english, 1990

23

Ion channeling investigation of the lattice location of Sn atoms in GaAs thin films grown by molecular beam epitaxy

Yu, Kin Man, Lee, Henry P., Wang, S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 511 KB

english, 1990

24

Shallow junction formation by dopant diffusion from in situ doped polycrystalline silicon chemically vapor deposited in a rapid thermal processor

Hsieh, T. Y., Chun, H. G., Kwong, D. L., Spratt, D. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 574 KB

english, 1990

25

Effects of carrier mass differences on the current-voltage characteristics of resonant tunneling structures

Ohno, H., Mendez, E. E., Wang, W. I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 591 KB

english, 1990

26

High-power operation of heterobarrier blocking structure InGaAlP visible light laser diodes

Itaya, K., Watanabe, Y., Ishikawa, M., Hatakoshi, G., Uematsu, Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 399 KB

english, 1990

27

Possible contribution of SiH2 and SiH3 in the plasma-induced deposition of amorphous silicon from silane

Vepřek, Stan, Vepřek-Heijman, Maritza G. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 592 KB

english, 1990

28

Relaxed GexSi1−x films grown by rapid thermal processing chemical vapor deposition

Jung, K. H., Kim, Y. M., Kwong, D. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 613 KB

english, 1990

29

Integrated waveguide/photodiodes using vertical impedance matching

Deri, R. J., Yasuoka, N., Makiuchi, M., Wada, O., Kuramata, A., Hamaguchi, H., Hawkins, R. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 616 KB

english, 1990

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