Volume 56; Issue 20

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Applied Physics Letters
Volume 56; Issue 20

Applied Physics Letters

Volume 56; Issue 20

1

Modification of hydrogen‐passivated silicon by a scanning tunneling microscope operating in air

Dagata, J. A., Schneir, J., Harary, H. H., Evans, C. J., Postek, M. T., Bennett, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 683 KB

english, 1990

2

Oriented cubic nucleations and local epitaxy during diamond growth on silicon {100} substrates

D. G. Jeng, H. S. Tuan, R. F. Salat, G. J. Fricano

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 594 KB

english, 1990

3

Stability of crystals that grow or evaporate by step propagation

Ghez, R., Cohen, H. G., Keller, Joseph B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 537 KB

english, 1990

4

High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

Arent, D. J., Brovelli, L., Jäckel, H., Marclay, E., Meier, H. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 598 KB

english, 1990

5

Efficient techniques for computer simulations of heteroepitaxial growth

Carson, C. L., Bernholc, J., Faux, D., Hall, C. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 689 KB

english, 1990

6

Correlation between midgap interface state density and thickness-averaged oxide stress and strain at Si/SiO2 interfaces formed by thermal oxidation of Si

Bjorkman, C. H., Fitch, J. T., Lucovsky, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 563 KB

english, 1990

7

Grain boundary observation in polycrystalline CdSe by photoelectrochemical etching techniques

Sugiura, Takashi, Hida, Masanobu, Minoura, Hideki, Ueno, Yasusada

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 556 KB

english, 1990

8

Interpretation of the fragmentation phenomenon in single-filament composite experiments

Wagner, H. D., Eitan, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 640 KB

english, 1990

9

Uniform refractive index cladding for LiNbO3 single-crystal fibers

Sudo, S., Yokohama, I., Cordova-Plaza, A., Fejer, M. M., Byer, R. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 559 KB

english, 1990

10

X-ray analysis of GaAs surface reconstructions in H2 and N2 atmospheres

Kisker, D. W., Fuoss, P. H., Tokuda, K. L., Renaud, G., Brennan, S., Kahn, J. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 595 KB

english, 1990

11

Voltage-dependent scanning tunneling microscopy images of liquid crystals on graphite

Mizutani, W., Shigeno, M., Ono, M., Kajimura, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 655 KB

english, 1990

12

Fabrication of IrSi3/p-Si Schottky diodes by a molecular beam epitaxy technique

Lin, T. L., Iannelli, J. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 555 KB

english, 1990

13

Effect of a magnetic field on the gate current in heterostructure field-effect transistors

Chen, You-jun, Dahlberg, E. Dan, Shur, M., Akinwande, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 505 KB

english, 1990

14

Comparison of simultaneous multiple wavelength lasing in various neodymium host crystals at transitions from 4F3/2–4I11/2 and 4F3/2–4I13/2

Shen, H. Y., Zeng, R. R., Zhou, Y. P., Yu, G. F., Huang, C. H., Zeng, Z. D., Zhang, W. J., Ye, Q. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 457 KB

english, 1990

15

Low threshold current implanted-planar buried-heterostructure graded-index separate confinement heterostructure laser in GaAs/AlGaAs

Vawter, G. Allen, Myers, D. R., Brennan, Tom M., Hammons, B. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 556 KB

english, 1990

16

Large Stark shifts of the local to global state intersubband transitions in step quantum wells

Mii, Y. J., Karunasiri, R. P. G., Wang, K. L., Chen, M., Yuh, P. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 579 KB

english, 1990

17

Stress-corrosion cracking in silicon

Thouless, M. D., Cook, R. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 569 KB

english, 1990

18

Conformal vapor phase growth of submicron thick (100) GaAs films

Pribat, D., Collet, C., Legagneux, P., Karapiperis, L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 631 KB

english, 1990

19

Ti silicide formation on thin-film silicon on insulator

Lin, Chenglu, Zhou, Wei, Zou, Shichang, Hemment, P. L. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 507 KB

english, 1990

20

Increase in the flux-pinning energy of YBa2Cu3O7−δ by shock compaction

Weir, S. T., Nellis, W. J., Kramer, M. J., Seaman, C. L., Early, E. A., Maple, M. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 671 KB

english, 1990

21

Thermally induced epitaxial recrystallization of NiSi2 and CoSi2

Ridgway, M. C., Elliman, R. G., Thornton, R. P., Williams, J. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 588 KB

english, 1990

22

Downstream plasma-enhanced diamond film deposition

Pickrell, David J., Zhu, Wei, Badzian, Andrzej R., Messier, Russell, Newnham, Robert E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 692 KB

english, 1990

23

Tunneling in semiconductor heterostructures studied by subpicosecond four-wave mixing

Leo, Karl, Shah, Jagdeep, Göbel, Ernst O., Damen, Theo C., Köhler, Klaus, Ganser, Peter

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 548 KB

english, 1990

24

Time-resolved investigations of sidewall recombination in dry-etched GaAs wires

Mayer, G., Maile, B. E., Germann, R., Forchel, A., Grambow, P., Meier, H. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 512 KB

english, 1990

25

Preparation of magnetic tips for a scanning force microscope

den Boef, A. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 590 KB

english, 1990

26

Misfit In0.18Ga0.82As/GaAs metal-semiconductor field-effect transistors with improved Schottky gate characteristics

Wang, G. W., Kaliski, R., Kuang, J. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 513 KB

english, 1990

27

Hydrogen beam stimulated low-temperature dissociation of organometallics—application for lowering the growth temperature in a metalorganic chemical vapor deposition process

Jagannathan, G. V., Andrews, Merrill L., Habig, Alec T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 574 KB

english, 1990

28

Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures

Chan, K. T., Lightner, M. J., Patterson, G. A., Yu, K. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 515 KB

english, 1990

29

Stimulated visible light emission from ultrathin GaAs single and multiple quantum wells sandwiched between indirect-gap (Al0.49Ga0.51As) confining layers

Lee, J. H., Hsieh, K. Y., Hwang, Y. L., Kolbas, R. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 582 KB

english, 1990

30

In situ processing of textured superconducting thin film of Bi(-Pb)-Ca-Sr-Cu-O by excimer laser ablation

Kumar, Ashok, Ganapathi, L., Narayan, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 548 KB

english, 1990

31

Flux creep and irreversibility line in high-temperature oxide superconductors

Matsushita, T., Fujiyoshi, T., Toko, K., Yamafuji, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 541 KB

english, 1990

32

X-ray streak camera with 2 ps response

Murnane, M. M., Kapteyn, H. C., Falcone, R. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 654 KB

english, 1990

33

p-type conductivity control of ZnSe highly doped with nitrogen by metalorganic molecular beam epitaxy

Taike, A., Migita, M., Yamamoto, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 497 KB

english, 1990

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