Volume 56; Issue 22

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Applied Physics Letters
Volume 56; Issue 22

Applied Physics Letters

Volume 56; Issue 22

1

Epitaxy of Y‐Ba‐Cu‐O thin films grown on single‐crystal MgO

Ramesh, R., Hwang, D., Ravi, T. S., Inam, A., Barner, J. B., Nazar, L., Chan, S. W., Chen, C. Y., Dutta, B., Venkatesan, T., Wu, X. D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 702 KB

english, 1990

2

Optically induced electromagnetic radiation from semiconductor surfaces

Zhang, X.-C., Darrow, J. T., Hu, B. B., Auston, D. H., Schmidt, M. T., Tham, P., Yang, E. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 579 KB

english, 1990

3

Deactivation of the photoionization excitation mechanism of rare-earth intraion emission in ZnS

SÌwiaÌ§tek, K., Godlewski, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 559 KB

english, 1990

4

Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6

Pearton, S. J., Hobson, W. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 548 KB

english, 1990

5

Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin-dependent optical nonlinearity

Tackeuchi, Atsushi, Muto, Shunichi, Inata, Tsuguo, Fujii, Toshio

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 519 KB

english, 1990

6

In situ epitaxial growth of the GdBa2Cu3O7 superconducting thin films on (100) ZrO2 by magnetron sputtering

Yi, Huai-ren, Wang, Rui-lan, Li, Hong-cheng, Chen, Yaun, Yin, Bo, Ron, Xi-sheng, Li, Lin

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 507 KB

english, 1990

7

Bulk semiconductor saturable absorber for a NaCl color center laser

Soccolich, C. E., Islam, M. N., Young, M. G., Miller, B. I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 569 KB

english, 1990

8

Conductance statistics of small-area ohmic contacts on GaAs

Blanc, N., Guéret, P., Buchmann, P., Dätwyler, K., Vettiger, P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 494 KB

english, 1990

9

Long-lived dry-etched AlGaAs/GaAs ridge waveguide laser diodes

Harding, C. M., Waters, R. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 507 KB

english, 1990

10

Analysis of thin rod flexural acoustic wave gravimetric sensors

Jen, C. K., Oliveira, J. E. B., Yu, J. C. H., Dai, J. D., Bussiere, J. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 553 KB

english, 1990

11

High-efficiency intracavity frequency doubling of Ti:Al2O3 lasers with KNbO3 crystals

Wu, L. S., Looser, H., Günter, P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 569 KB

english, 1990

12

‘‘Mushroom’’ double-channel double-heterostructure lead chalcogenide lasers made by chemical etching

Schlereth, K.-H., Böttner, H., Tacke, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 658 KB

english, 1990

13

Novel spectral response of a coupled quantum well photodiode

Tokuda, Yasunori, Kanamoto, Kyozo, Tsukada, Noriaki

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 570 KB

english, 1990

14

Use of trilevel resists for high-resolution soft-x-ray projection lithography

Berreman, D. W., Bjorkholm, J. E., Becker, M., Eichner, L., Freeman, R. R., Jewell, T. E., Mansfield, W. M., MacDowell, A. A., O’Malley, M. L., Raab, E. L., Silfvast, W. T., Szeto, L. H., Tennant, D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 566 KB

english, 1990

15

Fluorinated thin SiO2 grown by rapid thermal processing

Ting, W., Lo, G. Q., Hsieh, T. Y., Kwong, D. L., Kuehne, John, Magee, Charles W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 514 KB

english, 1990

16

Fermi edge singularity in the luminescence of modulation-doped Ga0.47In0.53As/Al0.48In0.52As single heterojunctions

Zhang, Yong-Hang, Jiang, De-Sheng, Cingolani, R., Ploog, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 630 KB

english, 1990

17

High Tc Y-Ba-Cu-O thin films prepared by in situ low-temperature codeposition of Y, BaF2, and Cu on α-Al2O3 substrates

Chromik, Š., Hanic, F., Adam, R., Jergel, M., Liday, J., Beňačka, Š.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 519 KB

english, 1990

18

Chemical beam epitaxial growth of InAs using trimethylindium and arsine

Chiu, T. H., Ditzenberger, J. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 508 KB

english, 1990

19

Deep levels in edge-defined, film-fed grown silicon solar cells

Yang, Y., Mil’shtein, S., Borenstein, J. T., Hanoka, J. I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 481 KB

english, 1990

20

Surface preparation for the heteroepitactic growth of ceramic thin films

Norton, M. Grant, Summerfelt, Scott R., Carter, C. Barry

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 605 KB

english, 1990

21

Josephson weak links in thin films of YBa2Cu3O7−x induced by electrical pulses

Robbes, D., Miklich, A. H., Kingston, J. J., Lerch, Ph., Wellstood, F. C., Clarke, John

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 549 KB

english, 1990

22

Epitaxial Al Schottky contacts formed on (111) GaAs

Ueno, Kazuyoshi, Yoshida, Takayoshi, Hirose, Kazuyuki

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 553 KB

english, 1990

23

Model describing phosphorus diffusion gettering of transition elements in silicon

Schröter, W., Kühnapfel, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 471 KB

english, 1990

24

Planar array of superheated superconductors: An improved superheated superconducting granule detector

Le Gros, M., Da Silva, A., Turrell, B. G., Kotlicki, A., Drukier, A. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 498 KB

english, 1990

25

Dislocation generation of GaAs on Si in the cooling stage

Tachikawa, Masami, Mori, Hidefumi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 564 KB

english, 1990

26

Enhanced coercivities in die-upset Nd-Fe-B magnets with diffusion-alloyed additives (Zn, Cu, and Ni)

Fuerst, C. D., Brewer, E. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 499 KB

english, 1990

27

Room-temperature photopumped operation of an InGaAs-InP vertical cavity surface-emitting laser

Deppe, D. G., Singh, S., Dupuis, R. D., Gerrard, N. D., Zydzik, G. J., van der Ziel, J. P., Green, C. A., Pinzone, C. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 506 KB

english, 1990

28

Surface structure of (100) GaP grown by gas source molecular beam epitaxy

Baillargeon, J. N., Cheng, K. Y., Hsieh, K. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 607 KB

english, 1990

29

Influence of off-oriented substrates on the crystallinity of (Ca,Sr)F2 layers grown on Si (100)

Minemura, Tetsuroh, Asano, Junko, Tsutsui, Kazuo, Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 609 KB

english, 1990

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