Volume 56; Issue 25

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Applied Physics Letters
Volume 56; Issue 25

Applied Physics Letters

Volume 56; Issue 25

1

Transmission through a bend in an electron waveguide

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 521 KB

english, 1990

2

Schottky barrier contacts on defect‐free GaAs (110)

Liliental‐Weber, Zuzanna, Weber, E. R., Washburn, J., Weaver, J. H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 717 KB

english, 1990

3

Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers

Tai, K., Yang, L., Wang, Y. H., Wynn, J. D., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 599 KB

english, 1990

4

Temperature dependence of the electronic coherence of GaAs-GaAlAs superlattices

Mendez, E. E., AgulloÌ-Rueda, F., Hong, J. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 572 KB

english, 1990

5

Room-temperature oxidation of silicon catalyzed by Cu3Si

Harper, J. M. E., Charai, A., Stolt, L., d’Heurle, F. M., Fryer, P. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 564 KB

english, 1990

6

Deposition of (100) oriented MgO thin films on sapphire by a spray pyrolysis method

DeSisto, W. J., Henry, R. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 575 KB

english, 1990

7

1.5 μm InGaAsP/InP buried crescent superluminescent diode on a p-InP substrate

Chen, T. R., Zhuang, Y. H., Xu, Y. J., Yariv, A., Kwong, N. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 456 KB

english, 1990

8

Optical generation of picosecond electrical pulses in asymmetric quantum well structures placed in a transverse magnetic field

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 571 KB

english, 1990

9

Electrically inactive grain boundaries in rapid thermal annealed boron-implanted polycrystalline silicon films

Almaggoussi, A., Sicart, J., Robert, J. L., Chaussemy, G., Laugier, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 558 KB

english, 1990

10

Optimization of stripe width for low-threshold operation of quantum well laser diodes

Osinski, J. S., Dzurko, K. M., Hummel, S. G., Dapkus, P. D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 598 KB

english, 1990

11

YBaCuO input coils with low Tc and high Tc SQUIDs

Oh, B., Koch, R. H., Gallagher, W. J., Foglietti, V., Koren, G., Gupta, A., Lee, W. Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 640 KB

english, 1990

12

Slow wave propagation in air-filled porous materials and natural rocks

Nagy, Peter B., Adler, Laszlo, Bonner, Brian P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 577 KB

english, 1990

13

Low-threshold GaAs/AlGaAs graded-index separate confinement heterostructure lasers grown by molecular beam epitaxy on oxide-masked Si substrates

Burns, Geoffrey F., Blanck, Hervé, Fonstad, Clifton G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 620 KB

english, 1990

14

Molecular beam epitaxy versus chemical vapor deposition of silicon on sapphire

Richmond, Eliezer Dovid, Twigg, Mark E., Qadri, Syed, Pellegrino, Joseph G., Duffey, Michael T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 573 KB

english, 1990

15

Improved minority-carrier lifetime in Si/SiGe heterojunction bipolar transistors grown by molecular beam epitaxy

Higashi, G. S., Bean, J. C., Buescher, C., Yadvish, R., Temkin, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 416 KB

english, 1990

16

Observation of silicon wafer emissivity in rapid thermal processing chambers for pyrometric temperature monitoring

Nulman, J., Antonio, S., Blonigan, W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 454 KB

english, 1990

17

Diffusion of hydrogen in low-pressure chemical vapor deposited silicon nitride films

Bik, W. M. Arnold, Linssen, R. N. H., Habraken, F. H. P. M., van der Weg, W. F., Kuiper, A. E. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 517 KB

english, 1990

18

Characterization of nanostructures by reflection electron microscopy

Scherer, A., Van der Gaag, B. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 595 KB

english, 1990

19

Production of highly oxidized As on GaAs (110) at 20 K

Anderson, Steven G., Seo, J. M., Komeda, T., Capasso, C., Weaver, J. H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 595 KB

english, 1990

20

Precision AlGaAs Bragg reflectors fabricated by phase-locked epitaxy

Walker, J. D., Malloy, K., Wang, S., Smith, J. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 606 KB

english, 1990

21

Copper microcircuit repair of opens using thermally driven exchange plating

von Gutfeld, R. J., Vigliotti, D. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 568 KB

english, 1990

22

Formation of single-phase PtAs2 films on GaAs by selective oxidation and etching

Weiss, Eliezer, Keller, Robert C., Kniffin, Margaret L., Helms, C. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 498 KB

english, 1990

23

High-speed laser direct writing of tungsten conductors from W(CO)6

Nambu, Y., Morishige, Y., Kishida, S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 570 KB

english, 1990

24

Real-time observation of molecular beam epitaxy growth on mesa-etched GaAs substrates by scanning microprobe reflection high-energy electron diffraction

Hata, M., Isu, T., Watanabe, A., Katayama, Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 477 KB

english, 1990

25

Real-space transfer in three-terminal InGaAs/InAlAs/InGaAs heterostructure devices

Mensz, Piotr M., Luryi, Serge, Cho, Alfred Y., Sivco, Deborah L., Ren, Fan

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 606 KB

english, 1990

26

High-conductance customized copper interconnections produced by laser seeding and selective electrodeposition

Gupta, Arunava, Chen, C. Julian

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 539 KB

english, 1990

27

Study of inversion layer mobility in metal-oxide-semiconductor field-effect transistors with reoxidized nitrided oxides

Lo, G. Q., Ting, W. C., Kwong, D. L., Lee, S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 628 KB

english, 1990

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