Volume 56; Issue 3

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Applied Physics Letters
Volume 56; Issue 3

Applied Physics Letters

Volume 56; Issue 3

1

Formation of silicon tips with

Marcus, R. B., Ravi, T. S., Gmitter, T., Chin, K., Liu, D., Orvis, W. J., Ciarlo, D. R., Hunt, C. E., Trujillo, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 674 KB

english, 1990

2

Critical thickness in epitaxial CdTe/ZnTe

Cibert, J., Gobil, Y., Dang, Le Si, Tatarenko, S., Feuillet, G., Jouneau, P. H., Saminadayar, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 596 KB

english, 1990

3

High-pressure vapor transport of ZnGeP2

Xing, G. C., Bachmann, K. J., Posthill, J. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 515 KB

english, 1990

4

A 970 nm strained-layer InGaAs/GaAlAs quantum well laser for pumping an erbium-doped optical fiber amplifier

Wu, Ming C., Olsson, N. A., Sivco, D., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 549 KB

english, 1990

5

Strain mapping in [111] and [001] InGaAs/GaAs superlattices

Venkateswaran, U. D., Cui, L. J., Li, M., Weinstein, B. A., Elcess, K., Fonstad, C. G., Mailhiot, C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 617 KB

english, 1990

6

Enhancement of the guided-wave second-harmonic generation in the form of Cerenkov radiation

Hayata, K., Yanagawa, K., Koshiba, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 542 KB

english, 1990

7

Direct correlation between reflection electron diffraction intensity behavior during the growth of AlxGa1−xAs/GaAs quantum wells and their photoluminescence properties

Deparis, C., Massies, J., Neu, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 601 KB

english, 1990

8

Creation of strong pinning sites by x-ray irradiation for Gd1Ba2Cu3O7−x superconducting thin films

Kohiki, Shigemi, Hatta, Shin-ichiro, Setsune, Kentaro, Wasa, Kiyotaka, Higashi, Yasuhiro, Fukushima, Sei, Gohshi, Yohichi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 520 KB

english, 1990

9

Carrier decay in GaAs quantum wells

Pickin, William, David, J. P. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 562 KB

english, 1990

10

Solitary wave emission from a nonlinear slab waveguide in three dimensions

Heatley, D. R., Wright, E. M., Stegeman, G. I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 539 KB

english, 1990

11

Erratum: Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111) [Appl. Phys. Lett. 52, 619 (1988)]

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 297 KB

english, 1990

12

Role of in situ rapid isothermal processing in the solid phase epitaxial growth of II-A fluoride films on (100) and (111) InP

Singh, R., Thakur, R. P. S., Kumar, A., Chou, P., Narayan, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 569 KB

english, 1990

13

In situ epitaxial growth of Bi2(Sr,Ca)3Cu2Ox films by ion beam sputtering with an atomic oxygen source

Fujita, J., Yoshitake, T., Igarashi, H., Satoh, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 605 KB

english, 1990

14

Transconductance degradation and interface state generation in metal-oxide-semiconductor field-effect transistors with oxynitride gate dielectrics under hot-carrier stress

Lo, G. Q., Ting, W. C., Shih, D. K., Kwong, D. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 505 KB

english, 1990

15

Changes in refractive index of fluoride glass fibers during fiber fabrication processes

Nakai, T., Norimatsu, N., Noda, Y., Shinbori, O., Mimura, Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 542 KB

english, 1990

16

Antiphase domain free growth of GaAs on Ge in GaAs/Ge/GaAs heterostructures

Strite, S., Biswas, D., Kumar, N. S., Fradkin, M., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 528 KB

english, 1990

17

High-purity GaSb epitaxial layers grown from Sb-rich solutions

Anayama, C., Tanahashi, T., Kuwatsuka, H., Nishiyama, S., Isozumi, S., Nakajima, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 433 KB

english, 1990

18

Lateral beam steering in mutual injection coupled Y-branch grating-surface-emitting diode laser arrays

Hammer, J. M., Evans, G. A., Carlson, N. W., Bour, D. P., Lurie, M., Palfrey, S. L., Amantea, R., Liew, S. K., Carr, L. A., James, E. A., Kirk, J. B., Reichert, W. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 502 KB

english, 1990

19

Doping and hydrogenation by ion implantation of glow discharge deposited amorphous silicon films

Galloni, R., Tsuo, Y. S., Baker, D. W., Zignani, F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 522 KB

english, 1990

20

dc and microwave negative differential conductance in GaAs/AlAs superlattices

Sibille, A., Palmier, J. F., Wang, H., Esnault, J. C., Mollot, F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 518 KB

english, 1990

21

Growth of pseudomorphic high electron mobility heterostructures by atmospheric pressure metalorganic chemical vapor deposition

Pan, N., Carter, J., Zheng, X. L., Hendriks, H., Hoke, W. E., Feng, M. S., Hsieh, K. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 566 KB

english, 1990

22

Dual-wavelength multiple quantum well n-i-p-i-n photodetector using an optically bistable abrupt absorption edge

Tokuda, Yasunori, Kanamoto, Kyozo, Abe, Yuji, Tsukada, Noriaki

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 476 KB

english, 1990

23

Miniband conduction of minority electrons and negative transconductance by quantum reflection in a superlattice transistor

Vengurlekar, A. S., Capasso, F., Hutchinson, A. L., Tsang, W. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 535 KB

english, 1990

24

Measurement of the electrically induced refractive index change in silicon for wavelength λ=1.3 μm using a Schottky diode

Evans, A. F., Hall, D. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 433 KB

english, 1990

25

Photoluminescence studies of Si (100) doped with low-energy (100–1000 eV) B+ ions during molecular beam epitaxy

Noël, J.-P., Greene, J. E., Rowell, N. L., Houghton, D. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 590 KB

english, 1990

26

Longitudinal electron transport in hydrogenated amorphous silicon/silicon nitride multilayer structures

Hattori, R., Shirafuji, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 529 KB

english, 1990

27

Rectification by resonant tunneling diodes

Wingreen, Ned S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 597 KB

english, 1990

28

Nonplanar silicon oxidation in dry O2+NF3

Imai, K., Yamabe, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 578 KB

english, 1990

29

Density of electronic states in a biased resonant tunneling structure

Pandey, L. N., Sahu, D., George, Thomas F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 520 KB

english, 1990

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