Volume 56; Issue 4

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Applied Physics Letters
Volume 56; Issue 4

Applied Physics Letters

Volume 56; Issue 4

1

X‐ray moiré pattern in dislocation‐free silicon‐on‐insulator wafers prepared by oxygen ion implantation

Jiang, B. L., Shimura, F., Rozgonyi, G. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 666 KB

english, 1990

2

Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs{111} surfaces

Ueno, Keiji, Shimada, Toshihiro, Saiki, Koichiro, Koma, Atsushi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 573 KB

english, 1990

3

Growth of regularly coiled carbon filaments by Ni catalyzed pyrolysis of acetylene, and their morphology and extension characteristics

Motojima, Seiji, Kawaguchi, Masayuki, Nozaki, Koji, Iwanaga, Hiroshi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 637 KB

english, 1990

4

Superlattices of Y-Ba-Cu-O/Yy-Pr1−y-Ba-Cu-O grown by pulsed laser deposition

Wu, X. D., Xi, X. X., Li, Q., Inam, A., Dutta, B., DiDomenico, L., Weiss, C., Martinez, J. A., Wilkens, B. J., Schwarz, S. A., Barner, J. B., Chang, C. C., Nazar, L., Venkatesan, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 478 KB

english, 1990

5

Microstrain and macrostrain profiles in ZnSe epitaxial layers

Krost, A., Richter, W., Brafman, O.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 480 KB

english, 1990

6

Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells

Nido, M., Alexander, M. G. W., Rühle, W. W., Schweizer, T., Köhler, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 554 KB

english, 1990

7

Quarter-wave Bragg reflector stack of InP-In0.53Ga0.47As for 1.65 μm wavelength

Deppe, D. G., Gerrard, N. D., Pinzone, C. J., Dupuis, R. D., Schubert, E. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 576 KB

english, 1990

8

Epitaxial growth of n+-n GaAs metal-semiconductor field-effect transistor structures using tertiarybutylarsine

Lum, R. M., Klingert, J. K., Ren, F., Shah, N. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 507 KB

english, 1990

9

Ion beam deposition of in situ superconducting Y-Ba-Cu-O films

Klein, J. D., Yen, A., Clauson, S. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 553 KB

english, 1990

10

Electron focusing with multiparallel one-dimensional channels made by focused ion beam

Nakamura, K., Tsui, D. C., Nihey, F., Toyoshima, H., Itoh, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 596 KB

english, 1990

11

Epitaxial Y1Ba2Cu3O7−y/Y1−xPrxBa2Cu3O7−y heterostructures

Venkatesan, T., Inam, A., Dutta, B., Ramesh, R., Hegde, M. S., Wu, X. D., Nazar, L., Chang, C. C., Barner, J. B., Hwang, D. M., Rogers, C. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 576 KB

english, 1990

12

Thermodynamic explanation to the enhanced diffusion of base dopant in AlGaAs-GaAs npn bipolar transistors

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 599 KB

english, 1990

13

Measured brightness of electron beams photoemitted from multicrystalline LaB6

Oettinger, P. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 433 KB

english, 1990

14

Excited-state spectroscopy of identified Mg acceptor in InP

Beye, A. C., Yamada, A., Kamijoh, T., Tanoue, H., Mayer, K. M., Ohnishi, N., Shibata, H., Makita, Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 536 KB

english, 1990

15

Influence of slip direction on the photoplastic effect in cadmium sulfide

Garosshen, T. J., Kim, C. S., Galligan, J. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 467 KB

english, 1990

16

Ellipsometric study of GaAs/GaP superlattices

Armelles, G., Rodríguez, J. M., Briones, F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 492 KB

english, 1990

17

Improving the performance of strained InGaAs/AlGaAs single quantum well lasers

Bour, D. P., Martinelli, Ramon U., Hawrylo, F. Z., Evans, G. A., Carlson, N. W., Gilbert, D. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 556 KB

english, 1990

18

A Si0.7Ge0.3 strained-layer etch stop for the generation of thin layer undoped silicon

Godbey, D., Hughes, H., Kub, F., Twigg, M., Palkuti, L., Leonov, P., Wang, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 613 KB

english, 1990

19

Lattice-matched Sc1−xErxAs/GaAs heterostructures: A demonstration of new systems for fabricating lattice-matched metallic compounds to semiconductors

Palmstro̸m, C. J., Mounier, S., Finstad, T. G., Miceli, P. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 560 KB

english, 1990

20

108 GHz passive mode locking of a multiple quantum well semiconductor laser with an intracavity absorber

Sanders, Steve, Eng, Lars, Paslaski, Joel, Yariv, Amnon

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 400 KB

english, 1990

21

Effect of the critical current criteria on the Ic vs T relation near Tc in polycrystalline Y-Ba-Cu-O thin films

Lee, Sang Young, Kim, Y. H., Park, J. H., Choi, S. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 512 KB

english, 1990

22

Photoluminescence from Si/Ge superlattices

Montie, E. A., van de Walle, G. F. A., Gravesteijn, D. J., van Gorkum, A. A., Bulle-Lieuwma, C. W. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 513 KB

english, 1990

23

Grain refinement induced by a critical crystal growth velocity in undercooled melts

Willnecker, R., Herlach, D. M., Feuerbacher, B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 556 KB

english, 1990

24

GaInP mass transport and GaInP/GaAs buried-heterostructure lasers

Groves, S. H., Liau, Z. L., Palmateer, S. C., Walpole, J. N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 571 KB

english, 1990

25

Photoinduced structural defect levels in amorphous selenium films

Kamalasanan, M. N., Chand, Suresh

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 419 KB

english, 1990

26

Mobility-lifetime product of photoexcited electrons in GaAs

Valley, George C., Rajbenbach, H., von Bardeleben, H. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 477 KB

english, 1990

27

Polymorphism and crystal-crystal transformations of the highly optically nonlinear organic compound α-[(4’-methoxyphenyl)methylene]-4-nitro-benzeneacetonitrile

Oliver, S. N., Pantelis, P., Dunn, P. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 562 KB

english, 1990

28

X-ray observation of compositional modulation caused by phase decomposition in GaInP ternary alloys

Okuda, Hiroshi, Kondo, Makoto, Kato, Kiyoko, Nakajima, Kazuo

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 540 KB

english, 1990

29

Electron transport properties of strained InxGa1−xAs

Thobel, J. L., Baudry, L., Cappy, A., Bourel, P., Fauquembergue, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 536 KB

english, 1990

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