Volume 56; Issue 5

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Applied Physics Letters
Volume 56; Issue 5

Applied Physics Letters

Volume 56; Issue 5

1

A simple method for elimination of gallium‐source related oval defects in molecular beam epitaxy of GaAs

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 738 KB

english, 1990

2

Etch-tuned ridged waveguide magneto-optic isolator

Wolfe, R., Lieberman, R. A., Fratello, V. J., Scotti, R. E., Kopylov, N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 662 KB

english, 1990

3

Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Siâ(100) surfaces

Hirashita, N., Kinoshita, M., Aikawa, I., Ajioka, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 539 KB

english, 1990

4

1/2ââ©100âªâ{100} dislocation loops in a zinc blende structure

Chu, S. N. G., Nakahara, S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 580 KB

english, 1990

5

Linear and nonlinear optical properties of 3-methyl-4-methoxy-4â-nitrostilbene single crystals

Bierlein, J. D., Cheng, L. K., Wang, Y., Tam Company, W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 643 KB

english, 1990

6

Formation of amorphous interlayers by a solid-state diffusion in Zr and Hf thin films on silicon

Cheng, J. Y., Chen, L. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 682 KB

english, 1990

7

Microfabrication below 10 nm

Van der Gaag, B. P., Scherer, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 626 KB

english, 1990

8

Molecular beam epitaxial growth of InAs on a TlBaCaCuO superconducting film

Rao, M. R., Tarsa, E. J., Kroemer, H., Gossard, A. C., Hu, E. L., Petroff, P. M., Olson, W. L., Eddy, M. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 608 KB

english, 1990

9

Superconductivity in a Ag-doped Bi-Pb-Sr-Ca-Cu-O system

Dou, S. X., Song, K.-H., Liu, H. K., Sorrell, C. C., Apperley, M. H., Savvides, N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 487 KB

english, 1990

10

High carrier concentration in InP by Si+ and P+ dual implantations

Shen, Honglie, Yang, Genqing, Zhou, Zuyao, Zou, Shichang

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 525 KB

english, 1990

11

Electroabsorption effects in InxGa1−xAs/GaAs strained-layer superlattices

Niki, S., Kellner, A. L., Lin, S. C., Cheng, A., Williams, A. R., Chang, W. S. C., Wieder, H. H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 519 KB

english, 1990

12

Resistivity and morphology of TiSi2 formed on Xe+-implanted polycrystalline silicon

Kuwano, Hiroki, Phillips, J. R., Mayer, J. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 631 KB

english, 1990

13

Femtosecond measurements of the nonresonant nonlinear index in AlGaAs

LaGasse, M. J., Anderson, K. K., Wang, C. A., Haus, H. A., Fujimoto, J. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 666 KB

english, 1990

14

Film thickness dependence of dislocation density reduction in GaAs-on-Si substrates

Tachikawa, Masami, Yamaguchi, Masafumi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 697 KB

english, 1990

15

Linewidths of Cu i(511 nm) and Au i(628 nm) laser transitions at room temperature

Wen, Chuan-Dong, Tobin, R. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 566 KB

english, 1990

16

Integrated external cavity quantum well laser array using single epitaxial growth on a patterned substrate

Chang-Hasnain, C. J., Kapon, E., Harbison, J. P., Florez, L. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 611 KB

english, 1990

17

Antiphase-domain-free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy

Adomi, K., Strite, S., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 567 KB

english, 1990

18

Hemispherical resonator study for surface-emitting InGaAsP/InP lasers

Jing, X. L., Ho, J. C., Yu, P. K. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 386 KB

english, 1990

19

Effect of oxygen in diamond deposition at low substrate temperatures

Liou, Y., Weimer, R., Knight, D., Messier, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 644 KB

english, 1990

20

Occurrence of maximum Tc at an optimal carrier concentration in superconducting bismuth and thallium cuprates

Somasundaram, P., Vijayaraghavan, R., Nagarajan, R., Seshadri, Ram, Umarji, A. M., Rao, C. N. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 438 KB

english, 1990

21

Attractor crowding in Josephson junction arrays

Tsang, Kwok Yeung, Wiesenfeld, Kurt

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 451 KB

english, 1990

22

Influence of background doping and implant damage on the diffusion of implanted silicon in GaAs

Murray, J. J., Deal, M. D., Stevenson, D. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 482 KB

english, 1990

23

Equilibrium critical thickness for Si1−xGex strained layers on (100) Si

Houghton, D. C., Gibbings, C. J., Tuppen, C. G., Lyons, M. H., Halliwell, M. A. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 565 KB

english, 1990

24

Third-order nonlinear optical properties of retinal derivatives

Sakai, T., Kawabe, Y., Ikeda, H., Kawasaki, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 486 KB

english, 1990

25

Erbium luminescence in doped amorphous silicon

Oestereich, T., Swiatkowski, C., Broser, I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 462 KB

english, 1990

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