Volume 57; Issue 10

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Applied Physics Letters
Volume 57; Issue 10

Applied Physics Letters

Volume 57; Issue 10

1

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 580 KB

english, 1990

2

Confinement of light hole valence‐band states in pseudomorphic InGaAs/Ga(Al)As quantum wells

Reithmaier, J.‐P., Hoger, R., Riechert, H., Hiergeist, P., Abstreiter, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 630 KB

english, 1990

3

Effects of Peierls barrier and epithreading dislocation orientation on the critical thickness in heteroepitaxial structures

Chidambarrao, D., Srinivasan, G. R., Cunningham, B., Murthy, C. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 700 KB

english, 1990

4

Measurements of noncritically phase-matched second-harmonic generation in a LiB3O5 crystal

Ukachi, T., Lane, R. J., Bosenberg, W. R., Tang, C. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 447 KB

english, 1990

5

Broadband magneto-optic waveguide isolator

Wolfe, R., Dillon, J. F., Lieberman, R. A., Fratello, V. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 588 KB

english, 1990

6

Hertzian stress contribution to low friction behavior of thin MoS2 coatings

I. L. Singer, R. N. Bolster, J. Wegand, S. Fayeulle, B. C. Stupp

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 542 KB

english, 1990

7

Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

Hwang, Hyunsang, Ting, Wenchi, Maiti, Bikas, Kwong, Dim-Lee, Lee, Jack

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 472 KB

english, 1990

8

Bistable conditions for low-temperature silicon epitaxy

Meyerson, Bernard S., Himpsel, Franz J., Uram, Kevin J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 555 KB

english, 1990

9

Optical properties of diamond at pressures of the center of Earth

Vohra, Yogesh K., Xia, Hui, Luo, Huan, Ruoff, Arthur L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 498 KB

english, 1990

10

Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloys

Noël, J.-P., Rowell, N. L., Houghton, D. C., Perovic, D. D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 630 KB

english, 1990

11

Magneto-optical investigation of flux penetration in Y1Ba2Cu3O7 thin films

Forkl, A., Dragon, T., Kronmüller, H., Habermeier, H.-U., Mertens, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 645 KB

english, 1990

12

Submicron pattern etching of GaAs by in situ electron beam lithography using a pattern generator

Sugimoto, Y., Akita, K., Taneya, M., Hidaka, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 563 KB

english, 1990

13

Microscopic and macroscopic uniformity control in plasma etching

Giapis, Konstantinos P., Scheller, Geoffrey R., Gottscho, Richard A., Hobson, William S., Lee, Yong H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 714 KB

english, 1990

14

Intensity noise reduction in semiconductor lasers by amplitude-phase decorrelation

Vahala, Kerry J., Newkirk, Michael A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 618 KB

english, 1990

15

THz time-domain spectroscopy of high Tc substrates

Grischkowsky, D., Keiding, So̸ren

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 574 KB

english, 1990

16

Growth of untwinned Bi2Sr2Ca2Cu3Ox thin films by atomically layered epitaxy

Eckstein, J. N., Bozovic, I., Schlom, D. G., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 557 KB

english, 1990

17

Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAs

Yamada, Syoji, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 568 KB

english, 1990

18

In situ etching depth monitoring for reactive ion etching of InGaAs(P)/InP heterostructures by ellipsometry

Müller, Roland

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 465 KB

english, 1990

19

Structural perfection of Y-Ba-Cu-O thin films controlled by the growth mechanism

Ramesh, R., Chang, C. C., Ravi, T. S., Hwang, D. M., Inam, A., Xi, X. X., Li, Q., Wu, X. D., Venkatesan, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 741 KB

english, 1990

20

Positive and negative ‘‘resistless’’ lithography of GaAs by electron beam exposure and thermal Cl2 etching

Clausen, E. M., Harbison, J. P., Chang, C. C., Lin, P. S. D., Craighead, H. G., Florez, L. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 702 KB

english, 1990

21

High peak power picosecond pulse generation from AlGaAs external cavity mode-locked semiconductor laser and traveling-wave amplifier

Delfyett, P. J., Lee, C.-H., Alphonse, G. A., Connolly, J. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 658 KB

english, 1990

22

Half-ring geometry quantum well GaAlAs lasers

Bar-Chaim, Nadav, Lau, Kam Y., Mazed, M. A., Mittelstein, Michael, Oh, Se, Ungar, Jeffrey E., Ury, Israel

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 466 KB

english, 1990

23

Real-time detection of higher hydrides on the growing surface of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy

Toyoshima, Yasutake, Arai, Kazuo, Matsuda, Akihisa, Tanaka, Kazunobu

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 654 KB

english, 1990

24

Enhanced slow positron reemission with new thin foil moderator geometry

Wu, Xiao-ye, Dull, Peter, Lynn, K. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 518 KB

english, 1990

25

Net gain in photorefractive InP:Fe at λ=1.32 μm without an applied field

Strait, J., Reed, J. D., Saunders, A., Valley, G. C., Klein, M. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 539 KB

english, 1990

26

Multilayered structure and anisotropic electrical properties of (SiO2)100−x(Pb0.6Bi0.4)x alloys prepared by a combined technique of mechanical alloying and hot pressing

Kim, B. G., Kataoka, N., Matsuzaki, K., Inoue, A., Masumoto, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 516 KB

english, 1990

27

Charge density waves of 1T-TaS2 imaged by atomic force microscopy

Barrett, R. C., Nogami, J., Quate, C. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 633 KB

english, 1990

28

Generation of picosecond pulses with a gain-switched GaAs surface-emitting laser

Karin, J. R., Melcer, L. G., Nagarajan, R., Bowers, J. E., Corzine, S. W., Morton, P. A., Geels, R. S., Coldren, L. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 418 KB

english, 1990

29

Magneto optics of two-dimensional holes in a strained-layer InAs0.15Sb0.85/InSb superlattice

Lin, S. Y., Tsui, D. C., Dawson, L. R., Tigges, C. P., Schirber, J. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 541 KB

english, 1990

30

Flux motion in a two-dimensional single-crystal Nb film

Hsu, J. W. P., Kapitulnik, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 479 KB

english, 1990

31

Prediction of direct band gaps in monolayer (001) and (111) GaAs/GaP superlattices

Dandrea, Robert G., Zunger, Alex

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 539 KB

english, 1990

32

Diffusion coefficient of boron in tungsten silicide

Suzuki, Kunihiro, Horie, Hiroshi, Yamashita, Yoshimi, Kataoka, Yuji

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 374 KB

english, 1990

33

Phase-matched second-harmonic generation in a polymer waveguide

Khanarian, G., Norwood, R. A., Haas, D., Feuer, B., Karim, D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 524 KB

english, 1990

34

Impulsive excitation of coherent phonons observed in reflection in bismuth and antimony

Cheng, T. K., Brorson, S. D., Kazeroonian, A. S., Moodera, J. S., Dresselhaus, G., Dresselhaus, M. S., Ippen, E. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 575 KB

english, 1990

35

Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy

Ribas, P., Krishnamoorthy, V., Park, R. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 530 KB

english, 1990

36

Dynamic and static response of multielectrode lasers

O’Gorman, J., Levi, A. F. J., Nottenburg, R. N., Tanbun-Ek, T., Logan, R. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 513 KB

english, 1990

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