Volume 57; Issue 11

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Applied Physics Letters
Volume 57; Issue 11

Applied Physics Letters

Volume 57; Issue 11

1

High critical currents in strained epitaxial YBa2Cu3O7-δ on Si

Fork, D. K., Fenner, D. B., Barton, R. W., Phillips, Julia M., Connell, G. A. N., Boyce, J. B., Geballe, T. H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 572 KB

english, 1990

2

Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation

Wood, Thomas H., Pastalan, John Z., Burrus, Charles A., Johnson, Bart C., Miller, Barry I., deMiguel, Jose L., Koren, Uziel, Young, Martin G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 647 KB

english, 1990

3

Role of copper in electromigration lifetimes of aluminum alloy conductors

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 464 KB

english, 1990

4

Microstructure of Cu- and Y-rich YBa2Cu3O7−x thin films: Identification of the CuYO2 phase

Marshall, A. F., Matijasevic, V., Rosenthal, P., Shinohara, K., Hammond, R. H., Beasley, M. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 694 KB

english, 1990

5

Optical measurement of electron bunching in vacuum

Smith, Richard S., Woodard, Nathan G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 596 KB

english, 1990

6

Solid phase reaction and electrical properties in Zr/Si system

Yamauchi, T., Zaima, S., Mizuno, K., Kitamura, H., Koide, Y., Yasuda, Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 470 KB

english, 1990

7

Hydrogen annealing of PtSi-Si Schottky barrier contacts

Tsaur, B-Y., Mattia, J. P., Chen, C. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 628 KB

english, 1990

8

Occupation of quantum states determined by energy storage in superlattice quantum state transfer devices

Kirchoefer, S. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 602 KB

english, 1990

9

Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap

de Souza, J. P., Sadana, D. K., Baratte, H., Cardone, F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 637 KB

english, 1990

10

AlGaAs/GaAs pnpn differential optical switch operable with 400 fJ optical input energy

Hara, Kunihiko, Kojima, Keisuke, Mitsunaga, Kazumasa, Kyuma, Kazuo

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 517 KB

english, 1990

11

GaAs multiple quantum well waveguide modulators on silicon substrates

Treyz, G. V., May, P. G., LaTulipe, D., Basu, S., Wang, W. I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 528 KB

english, 1990

12

Atmospheric pressure organometallic vapor phase epitaxy growth of high-mobility GaAs using trimethylgallium and arsine

Hanna, M. C., Lu, Z. H., Oh, E. G., Mao, E., Majerfeld, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 554 KB

english, 1990

13

Digital chemical vapor deposition of SiO2

Nakano, M., Sakaue, H., Kawamoto, H., Nagata, A., Hirose, M., Horiike, Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 537 KB

english, 1990

14

Heterodyne measurement of poling transient effects in electro-optic polymer thin films

Valley, J. F., Wu, J. W., Valencia, C. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 630 KB

english, 1990

15

Ultrafast coplanar air-transmission lines

Dykaar, D. R., Levi, A. F. J., Anzlowar, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 612 KB

english, 1990

16

Raman examination of a plasma arcjet deposited diamond film

Phelps, Andrew W., Stalder, K. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 469 KB

english, 1990

17

Raman scattering verification of nonpersistent optical control of electron density in a heterojunction

Richards, D., Fasol, G., Ploog, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 462 KB

english, 1990

18

Heterostructure p-n junction tunnel diodes

Day, D. J., Chung, Y., Webb, C., Eckstein, J. N., Xu, J. M., Sweeny, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 442 KB

english, 1990

19

Migration-enhanced epitaxy growth and characterization of high quality ZnSe/GaAs superlattices

Ramesh, S., Kobayashi, N., Horikoshi, Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 513 KB

english, 1990

20

Anisotropic proximity coupling in small YBa2Cu3O7-normal-Pb junctions

Lee, Mark, Lew, D., Eom, C. B., Geballe, T. H., Beasley, M. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 492 KB

english, 1990

21

High critical current densities in YBa2Cu3O7−x films on polycrystalline zirconia

Norton, David P., Lowndes, Douglas H., Budai, J. D., Christen, D. K., Jones, E. C., Lay, K. W., Tkaczyk, J. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 476 KB

english, 1990

22

Transport properties of InxGa1−xAs/GaAs strained quantum well delta-doped heterostructures grown by molecular beam epitaxy

Hong, W.-P., Zrenner, A., Kim, O. H., DeRosa, F., Harbison, J., Florez, L. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 500 KB

english, 1990

23

Laser writing of superconducting patterns on YBa2Cu3Ox films

Dye, R. C., Muenchausen, R. E., Nogar, N. S., Mukherjee, A., Brueck, S. R. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 571 KB

english, 1990

24

Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2-CaF2 as a buffer

Tiwari, A. N., Floeder, W., Blunier, S., Zogg, H., Weibel, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 527 KB

english, 1990

25

In situ growth of superconducting YBa2Cu3O7−δ thin films on Si with conducting indium-tin-oxide buffer layers

Kellett, B. J., James, J. H., Gauzzi, A., Dwir, B., Pavuna, D., Reinhart, F. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 428 KB

english, 1990

26

Random well width superlattices as one-dimensional artificial amorphous materials and their possible exploitation in a new Ovshinsky switch

Brennan, Kevin F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 536 KB

english, 1990

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