Volume 57; Issue 12

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Applied Physics Letters
Volume 57; Issue 12

Applied Physics Letters

Volume 57; Issue 12

1

Double quantum well resonant tunnel diodes

Day, D. J., Chung, Y., Webb, C., Eckstein, J. N., Xu, J. M., Sweeny, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 408 KB

english, 1990

2

Bias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier-induced defect creation’’ model correct?

Gelatos, A. V., Kanicki, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 627 KB

english, 1990

3

Up to the 51st harmonic mixing in YBa2Cu3O7−y weak link operated in liquid nitrogen

Wu, P. H., Xu, Yunhui, Heiden, C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 728 KB

english, 1990

4

Defect states of amorphous Si probed by the diffusion and solubility of Cu

Polman, A., Jacobson, D. C., Coffa, S., Poate, J. M., Roorda, S., Sinke, W. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 590 KB

english, 1990

5

Picosecond acoustic pulse reflection from a metal-metal interface

Svinarich, Kathryn A., Meng, W. J., Eesley, G. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 557 KB

english, 1990

6

Does the two-dimensional electron gas effect contribute to high-frequency and high-speed performance of field-effect transistors?

Feng, M., Lau, C. L., Eu, V., Ito, C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 573 KB

english, 1990

7

Studies of picosecond carrier dynamics in polysilane alloys: Evidence for geminate recombination in small hydrogenated amorphous silicon clusters

Han, S. G., Hess, B. C., Kanner, G. S., Vardeny, Z. V., Nitta, S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 600 KB

english, 1990

8

Fabrication of ultrafine gratings on GaAs by electron beam lithography and two-step wet chemical etching

Katoh, T., Nagamune, Y., Li, G. P., Fukatsu, S., Shiraki, Y., Ito, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 588 KB

english, 1990

9

Self-propagating explosive reactions in Al/Ni multilayer thin films

Ma, E., Thompson, C. V., Clevenger, L. A., Tu, K. N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 594 KB

english, 1990

10

Electric field dependent photocurrent and electroreflectance spectra of InGaAs/AlGaAs multiple strained quantum well structures

Fritz, I. J., Brennan, T. M., Wendt, J. R., Ginley, D. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 525 KB

english, 1990

11

Large peak current densities in novel resonant interband tunneling heterostructures

Ting, D. Z.-Y., Collins, D. A., Yu, E. T., Chow, D. H., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 532 KB

english, 1990

12

Tight-binding analysis of the conduction-band structure in quantum wires

Yamauchi, T., Arakawa, Y., Schulman, J. N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 520 KB

english, 1990

13

Lateral quantum well wires fabricated by selective metalorganic chemical vapor deposition

Fukui, Takashi, Ando, Seigo, Fukai, Yoshino K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 478 KB

english, 1990

14

Monte Carlo simulation of mode-locked semiconductor diode lasers

Werner, J., Lee, T. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 481 KB

english, 1990

15

Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

Tufts, Bruce J., Casagrande, Louis G., Lewis, Nathan S., Grunthaner, Frank J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 520 KB

english, 1990

16

Low-threshold continuous-wave room-temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2 back coating

Egawa, T., Tada, H., Kobayashi, Y., Soga, T., Jimbo, T., Umeno, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 444 KB

english, 1990

17

Layer thickness calculations for silicon-on-insulator structures formed by oxygen implantation

Bussmann, U., Hemment, P. L. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 499 KB

english, 1990

18

High sensitivity In0.53Ga0.47As/InP heterojunction phototransistor

Leu, L. Y., Gardner, J. T., Forrest, S. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 567 KB

english, 1990

19

Fluorination of diamond (100) by atomic and molecular beams

Freedman, Andrew, Stinespring, Charter D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 566 KB

english, 1990

20

In-plane anisotropy in batch-produced Langmuir–Blodgett films: Side-by-side and face-to-face arrays

Tabe, Yuka, Ikegami, Keiichi, Kuroda, Shin-ichi, Saito, Kazuhiro, Saito, Mitsuyoshi, Sugi, Michio

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 487 KB

english, 1990

21

Complete planarization of via holes with aluminum by selective and nonselective chemical vapor deposition

Tsubouchi, Kazuo, Masu, Kazuya, Shigeeda, Nobuyuki, Matano, Tatsuya, Hiura, Yohei, Mikoshiba, Nobuo

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 540 KB

english, 1990

22

Ultraclean, integrated processing of thermal oxide structures

Offenberg, M., Liehr, M., Rubloff, G. W., Holloway, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 601 KB

english, 1990

23

New insights on the electronic properties of the trivalent silicon defects at oxidized 〈100〉 silicon surfaces

Vuillaume, Dominique, Goguenheim, Didier, Vincent, Gilbert

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 613 KB

english, 1990

24

Electron focusing with multiparallel GaAs-AlGaAs wires defined by damageless processing

Nihey, F., Nakamura, K., Kuzuhara, M., Samoto, N., Itoh, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 577 KB

english, 1990

25

Relationship between thermal stress and structural properties of SrF2 films on (100) InP

Singh, R., Thakur, R. P. S., Katz, A., Nelson, A. J., Gebhard, S. C., Swartzlander, A. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 550 KB

english, 1990

26

Computer simulation of relativistic multiresonator cylindrical magnetrons

Chan, Hei-Wai, Chen, Chiping, Davidson, Ronald C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 595 KB

english, 1990

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