Volume 57; Issue 15

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Applied Physics Letters
Volume 57; Issue 15

Applied Physics Letters

Volume 57; Issue 15

1

Optimization of modulation ratio and insertion loss in reflective electroabsorption modulators

Pezeshki, B., Thomas, D., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 473 KB

english, 1990

2

Ultrahigh Au/p-GaAs Schottky barriers due to plasma hydrogenation

Ashok, S., Wang, Y. G., Nakagawa, O. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 613 KB

english, 1990

3

Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures

Longenbach, K. F., Luo, L. F., Wang, W. I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 531 KB

english, 1990

4

In situ time-resolved reflectivity measurements of Al under excimer laser planarization conditions

Carey, Paul G., Woratschek, Bertram J., Bachmann, Friedrich

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 574 KB

english, 1990

5

Subpicosecond photoresponse of carriers in low-temperature molecular beam epitaxial In0.52Al0.48As/InP

Gupta, S., Bhattacharya, P. K., Pamulapati, J., Mourou, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 495 KB

english, 1990

6

Epitaxial growth of ferroelectric bismuth titanate thin films by pulsed laser deposition

Ramesh, R., Luther, K., Wilkens, B., Hart, D. L., Wang, E., Tarascon, J. M., Inam, A., Wu, X. D., Venkatesan, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 638 KB

english, 1990

7

Improved contacts to semi-insulating GaAs photoconductive switches using a graded layer of InGaAs

Kuchta, D., Whinnery, J. R., Smith, J. S., Woodall, J. M., Pettit, D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 529 KB

english, 1990

8

Miniaturized total-reflection ferroelectric liquid-crystal electro-optic switch

Bawa, S. S., Biradar, A. M., Saxena, K., Chandra, Subhas

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 596 KB

english, 1990

9

Deep levels in Te-doped AlSb grown by molecular beam epitaxy

Nakagawa, Atsushi, Pekarik, John J., Kroemer, Herbert, English, John H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 535 KB

english, 1990

10

rf plasma aerosol deposition of superconductive Y1Ba2Cu3O7−δ films at atmospheric pressure

Wang, X. W., Zhong, H. H., Snyder, R. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 541 KB

english, 1990

11

Radiative recombination in surface-free n+/n−/n+GaAs homostructures

Smith, L. M., Wolford, D. J., Venkatasubramanian, R., Ghandhi, S. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 615 KB

english, 1990

12

Measurement of nonlinear properties in Ag-ion exchange waveguides using degenerate four-wave mixing

Ashley, Paul R., Bloemer, Mark J., Davis, Jack H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 564 KB

english, 1990

13

Novel relaxation process in strained Si/Ge superlattices grown on Ge (001)

Wegscheider, W., Eberl, K., Abstreiter, G., Cerva, H., Oppolzer, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 795 KB

english, 1990

14

Optical determination of oxygen outdiffusion in epitaxial silicon grown on n-type Czochralski substrates

Geddo, M., Pivac, B., Borghesi, A., Stella, A., Pedrotti, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 612 KB

english, 1990

15

Anisotropy and intergrain current density in oriented grained bulk YBa2Cu3Ox superconductor

Selvamanickam, V., Salama, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 654 KB

english, 1990

16

Deposition of SiC films by pulsed excimer laser ablation

Balooch, M., Tench, R. J., Siekhaus, W. J., Allen, M. J., Connor, A. L., Olander, D. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 567 KB

english, 1990

17

In situ single chamber laser processing of YBa2Cu3O7−δ superconducting thin films on Si (100) with yttria-stabilized zirconia buffer layers

Tiwari, P., Kanetkar, S. M., Sharan, S., Narayan, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 666 KB

english, 1990

18

Detection of a stimulated emission process as an inverse thermal lens signal

Terazima, Masahide, Azumi, Tohru

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 444 KB

english, 1990

19

Electronic structure and dynamics of thin Ge/GaAs(110) heterostructures

Haight, R., Silberman, J. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 539 KB

english, 1990

20

Interband resonant tunneling diode in δ-doped GaAs

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 433 KB

english, 1990

21

Photoemission from thin-film lanthanum hexaboride

May, P. G., Petkie, R. R., Harper, J. M. E., Yee, D. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 393 KB

english, 1990

22

Picosecond time-resolved surface-lattice temperature probe

Elsayed-Ali, H. E., Herman, J. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 508 KB

english, 1990

23

Continuously graded-index separate confinement heterostructure multiquantum well Ga1−xInxAs1−yPy/InP ridge waveguide lasers grown by low-pressure metalorganic chemical vapor deposition with lattice-matched quaternary wells and barriers

Ludowise, M. J., Ranganath, T. R., Fischer-Colbrie, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 493 KB

english, 1990

24

Cathodoluminescence study of the damage induced by low-energy boron implantation using a chemical bevel

Papadopoulo, A. C., Dubon-Chevallier, C., Pougnet, A. M., Krauz, P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 447 KB

english, 1990

25

Light-induced defect studies in hydrogenated amorphous silicon by exoelectron emission

Bhide, R. S., Manorama, V., Pawar, S. K., Babras, Suvarna, Bhoraskar, S. V., Bhide, V. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 468 KB

english, 1990

26

Ultrafast optical nonlinearities of type II AlxGa1−xAs/AlAs multiple quantum wells

Feldmann, J., Göbel, E., Ploog, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 572 KB

english, 1990

27

Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P

Fouquet, J. E., Robbins, V. M., Rosner, S. J., Blum, O.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 573 KB

english, 1990

28

Interdiffusion and strain relaxation in (SimGen)p superlattices

Baribeau, J.-M., Pascual, R., Saimoto, S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 576 KB

english, 1990

29

Nonalloyed ohmic contacts on low-temperature molecular beam epitaxial GaAs: Influence of deep donor band

Yamamoto, H., Fang, Z-Q., Look, D. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 548 KB

english, 1990

30

Optical detection of biatomic sheets of silicon in Si/Ge superlattices

White, J. D., Fasol, G., Ghanbari, R. A., Gell, M. A., Gibbings, C. J., Tuppen, C. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 549 KB

english, 1990

31

Spontaneous recombination current in InGaAs/GaAs quantum well lasers

Blood, P., Fletcher, E. D., Woodbridge, K., Vening, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 597 KB

english, 1990

32

Rapid thermal annealing of Ge-implanted InP

Kringho̸j, P., Gribkovskii, V. V., Nylandsted Larsen, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 615 KB

english, 1990

33

Effect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layers

Laikhtman, B., Heiblum, M., Meirav, U.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 641 KB

english, 1990

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