Volume 57; Issue 2

Applied Physics Letters

Volume 57; Issue 2
2

Relaxation of strained InGaAs during molecular beam epitaxy

Year:
1990
Language:
english
File:
PDF, 695 KB
english, 1990
4

Plasmons, photoluminescence, and band-gap narrowing in very heavily doped n-GaAs

Year:
1990
Language:
english
File:
PDF, 573 KB
english, 1990
7

GaAs/AlGaAs multiple quantum well field-induced optical waveguide

Year:
1990
Language:
english
File:
PDF, 549 KB
english, 1990
13

Theoretical study of structures and growth of strained Si/Ge superlattices

Year:
1990
Language:
english
File:
PDF, 490 KB
english, 1990
15

Dynamics of excimer laser ablation of superconductors in an oxygen environment

Year:
1990
Language:
english
File:
PDF, 592 KB
english, 1990
17

Superconducting free-standing thin films of YBa2Cu3Ox

Year:
1990
Language:
english
File:
PDF, 458 KB
english, 1990
23

Chemical kinetics of hydrogen and (111) Si-SiO2 interface defects

Year:
1990
Language:
english
File:
PDF, 550 KB
english, 1990
27

Chemical beam epitaxial growth of strained carbon-doped GaAs

Year:
1990
Language:
english
File:
PDF, 474 KB
english, 1990