Volume 57; Issue 21

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Applied Physics Letters
Volume 57; Issue 21

Applied Physics Letters

Volume 57; Issue 21

1

Si-H and N-H vibrational properties in glow-discharge amorphous SiNx:H films (0

Hasegawa, Seiichi, Matsuda, Masaaki, Kurata, Yoshihiro

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 646 KB

english, 1990

2

Amplified spontaneous emission in Tm3+-doped monomode optical fibers in the visible region

Gomes, A. S. L., de Araujo, Cid B., Ainslie, B. J., Craig-Ryan, S. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 471 KB

english, 1990

3

As2S3/GaAs, a new amorphous/crystalline heterojunction for the III-V semiconductors

Yablonovitch, E., Gmitter, T. J., Bagley, B. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 571 KB

english, 1990

4

Microstructure of epitaxial YBa2Cu3O7−x thin films grown on LaAlO3 (001)

Y. Hsieh, M. P. Siegal, R. Hull, J. M. Phillips

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 644 KB

english, 1990

5

Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures: In-plane epitaxial relation and channeling analysis

Chang, Chin-An, Liu, Joyce C., Angilello, Joseph

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 448 KB

english, 1990

6

Multicomponent structure in the temperature-dependent persistent photoconductivity due to different DX centers in AlxGa1−xAs:Si

Brunthaler, G., Köhler, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 583 KB

english, 1990

7

Frequency stabilization of an external-cavity diode laser

Lee, W. David, Campbell, Joe C., Brecha, R. J., Kimble, H. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 529 KB

english, 1990

8

Conservation and filling of neutral hole traps in SiO2 during ionizing radiation exposure

Lipkin, L., Reisman, A., Williams, C. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 494 KB

english, 1990

9

Strain in porous Si formed on a Si (100) substrate

Bai, Gang, Kim, Kun Ho, Nicolet, Marc-A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 634 KB

english, 1990

10

Fission-fragment-excited lasing at 585.3 nm in He/Ne/Ar gas mixtures

Hebner, G. A., Hays, G. N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 597 KB

english, 1990

11

High-energy (56 MeV) oxygen implantation in Si, GaAs, and InP

Pearton, S. J., Jalali, B., Poate, J. M., Fox, J. D., Kemper, K. W., Magee, C. W., Jones, K. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 599 KB

english, 1990

12

Novel indium oxide/n-GaAs diodes

Golan, A., Bregman, J., Shapira, Y., Eizenberg, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 551 KB

english, 1990

13

High average power edge emitting laser diode arrays on silicon microchannel coolers

Mundinger, D., Beach, R., Benett, W., Solarz, R., Sperry, V., Ciarlo, D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 493 KB

english, 1990

14

Anomalies of hypersonic velocity and attenuation in vinylidene fluoride-trifluoroethylene copolymer from Brillouin scattering

Liu, Zhimin, Schmidt, V. Hugo

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 599 KB

english, 1990

15

Etching characteristics of Si1−xGex alloy in ammoniac wet cleaning

Koyama, Kazuhisa, Hiroi, Masayuki, Tatsumi, Toru, Hirayama, Hiroyuki

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 477 KB

english, 1990

16

Dissimilarity between thermal oxide and buried oxide fabricated by implantation of oxygen on Si revealed by etch rates in HF

Vanheusden, K., Stesmans, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 570 KB

english, 1990

17

Characterization of rapid thermally nitrided SiO2/Si interface by the conductance technique

Liu, Z. H., Lai, P. T., Cheng, Y. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 534 KB

english, 1990

18

Effects of strain in multiple quantum well distributed feedback lasers

Tanbun-Ek, T., Logan, R. A., Chu, S. N. G., Sergent, A. M., Wecht, K. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 610 KB

english, 1990

19

Recovery of original superconducting properties in ion-irradiated Y1Ba2Cu3O7−x thin films

Vadlamannati, S., England, P., Stoffel, N. G., Ramesh, R., Ravi, T. S., Hwang, D. M., Findikoglu, A., Li, Q., Venkatesan, T., McLean, W. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 656 KB

english, 1990

20

p-type doping of gallium antimonide grown by molecular beam epitaxy using silicon

Rossi, T. M., Collins, D. A., Chow, D. H., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 547 KB

english, 1990

21

Photoluminescence of quantum well structures with modulated layers grown by an alternating source supply

Hashimoto, A., Sugiyama, N., Tamura, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 483 KB

english, 1990

22

Compositional modulation and long-range ordering in GaP/InP short-period superlattices grown by gas source molecular beam epitaxy

Hsieh, K. C., Baillargeon, J. N., Cheng, K. Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 590 KB

english, 1990

23

Novel electron interferometers using field-induced decoupling in double quantum well structures

Okuda, Masahiro, Fujii, Kazuhito, Shimizu, Akira

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 557 KB

english, 1990

24

Erratum: Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions [Appl. Phys. Lett. 57, 1242 (1990)]

Tufts, Bruce J., Casagrande, Louis G., Lewis, Nathan S., Grunthaner, Frank J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 542 KB

english, 1990

25

Growth of oxide layers on gallium arsenide with a high kinetic energy atomic oxygen beam

Hoffbauer, M. A., Cross, J. B., Bermudez, V. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 519 KB

english, 1990

26

Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells

Rao, E. V. K., Ossart, P., Thibierge, H., Quillec, M., Krauz, P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 584 KB

english, 1990

27

Electro-optical bistability in strained InxGa1−xAs/Al0.15Ga0.85As multiple quantum wells

Fujiwara, Kenzo, Kawashima, Kenji, Kobayashi, Kikuo, Sano, Naokatsu

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 447 KB

english, 1990

28

Localized two-dimensional electron gas formation by focused Si ion beam implantation into GaAs/AlGaAs heterostructures

Sasa, S., Miller, M. S., Li, Y. J., Xu, Z., Ensslin, K., Petroff, P. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 562 KB

english, 1990

29

Ion beam induced conductivity in chemically vapor deposited diamond films

Prawer, S., Hoffman, A., Kalish, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 589 KB

english, 1990

30

Excimer-laser-induced crystallization of hydrogenated amorphous silicon

Winer, K., Anderson, G. B., Ready, S. E., Bachrach, R. Z., Johnson, R. I., Ponce, F. A., Boyce, J. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 599 KB

english, 1990

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