Volume 57; Issue 23

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Applied Physics Letters
Volume 57; Issue 23

Applied Physics Letters

Volume 57; Issue 23

1

Picosecond all-optical logic gate in a nonlinear organic étalon

Williams, V. S., Ho, Z. Z., Peyghambarian, N., Gibbons, W. M., Grasso, R. P., O’Brien, M. K., Shannon, P. J., Sun, S. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 519 KB

english, 1990

2

Early stages of growth of GaAs on Si observed by scanning tunneling microscopy

Biegelsen, D. K., Bringans, R. D., Northrup, J. E., Swartz, L. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 683 KB

english, 1990

3

Optical nonlinearity of CdSe microcrystallites in a sputtered SiO2 film

Yumoto, J., Shinojima, H., Uesugi, N., Tsunetomo, K., Nasu, H., Osaka, Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 573 KB

english, 1990

4

Optical characterization of silicon-on-insulator material obtained by sequential implantation and annealing

Pérez, A., Samitier, J., Cornet, A., Morante, J. R., Hemment, P. L. F., Homewood, K. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 610 KB

english, 1990

5

Growth of YBa2Cu3O7−δ on vicinally polished MgO substrates

Streiffer, S. K., Lairson, B. M., Bravman, J. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 621 KB

english, 1990

6

Absorption spectroscopy on Hg+ and excited Hg in Hg-Ar discharges

Wamsley, R. C., Lawler, J. E., Ingold, J. H., Bigio, L., Roberts, V. D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 574 KB

english, 1990

7

Cathodoluminescence study of erbium in La1−xErxF3 epitaxial layers on Si(111)

Müller, H. D., Schneider, J., Lüth, H., Strümpler, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 525 KB

english, 1990

8

Angle-dependent laser-induced voltages in room-temperature polycrystalline wafers of YBa2Cu3O7−x

Tate, K. L., Hilinski, E. F., Foster, S. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 620 KB

english, 1990

9

Low-temperature Si molecular beam epitaxy: Solution to the doping problem

Gossmann, H.-J., Schubert, E. F., Eaglesham, D. J., Cerullo, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 589 KB

english, 1990

10

Reaction patterning of YBa2Cu3O7−δ thin films on Si

Fork, D. K., Barrera, A., Geballe, T. H., Viano, A. M., Fenner, D. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 583 KB

english, 1990

11

Application of organometallic chemical vapor deposition mechanisms to lateral band-gap patterning on stepped surfaces

Colas, E., Clausen, E. M., Kapon, E., Hwang, D. M., Simhony, S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 648 KB

english, 1990

12

Effects of substrate misorientation on ordering in GaAs0.5P0.5 grown by organometallic vapor phase epitaxy

Chen, G. S., Jaw, D. H., Stringfellow, G. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 727 KB

english, 1990

13

Copper-oxygen intercalation and related phase transformations in YBaCuO

Fendorf, M., Burmester, C. P., Wille, L. T., Gronsky, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 789 KB

english, 1990

14

a-axis oriented epitaxial YBa2Cu3O7−x-PrBa2Cu3O7−y heterostructures

Inam, A., Rogers, C. T., Ramesh, R., Remschnig, K., Farrow, L., Hart, D., Venkatesan, T., Wilkens, B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 733 KB

english, 1990

15

Direct determination of electron mobility in photorefractive Bi12SiO20 by a holographic time-of-flight technique

Partanen, J. P., Jonathan, J. M. C., Hellwarth, R. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 630 KB

english, 1990

16

Observation of an ordered structure in the initial stage of Ge/Si heteroepitaxial growth

Ohshima, N., Koide, Y., Itoh, K., Zaima, S., Yasuda, Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 587 KB

english, 1990

17

In situ deposition of superconducting Bi-Pb-Sr-Ca-Cu-O thin films on MgO(100) substrates by rf magnetron sputtering and laser ablation

Moodera, J. S., Rao, A. M., Kussmaul, A., Tedrow, P. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 713 KB

english, 1990

18

Infrared absorption in n-type ZnSe/GaAs heteroepitaxial films

Deneuville, A., Lindauer, G., Tanner, D. B., Park, R. M., Holloway, P. H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 604 KB

english, 1990

19

Barrier layers for realization of high capacitance density in SrTiO3 thin-film capacitor on silicon

Sakuma, Toshiyuki, Yamamichi, Shintaro, Matsubara, Shogo, Yamaguchi, Hiromu, Miyasaka, Yoichi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 556 KB

english, 1990

20

Quantum-limited heterodyne detection of millimeter waves using superconducting tantalum tunnel junctions

Mears, C. A., Hu, Qing, Richards, P. L., Worsham, A. H., Prober, D. E., Räisänen, A. V.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 522 KB

english, 1990

21

Lasing phase diagram for semiconductor surface-emitting lasers

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 571 KB

english, 1990

22

Single-mode semiconductor optical waveguides with large dimensions suitable for compact bend applications

Deri, R. J., Shahar, A., Colas, E., Thurston, R. N., Tomlinson, W. J., Yi-Yan, A., Seto, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 531 KB

english, 1990

23

Surface photovoltage spectroscopy of gap states at GaAs and InP metal interfaces

Burstein, L., Bregman, J., Shapira, Yoram

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 492 KB

english, 1990

24

Preparation and critical current density of Bi2Sr2Ca2Cu3O10+x superconducting whiskers

Matsubara, Ichiro, Tanigawa, Hideo, Ogura, Toru, Yamashita, Hiroshi, Kinoshita, Makoto, Kawai, Tomoji

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 433 KB

english, 1990

25

Evidence for anomalous structural relaxation in SiO2 films

Rendell, R. W., Ngai, K. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 571 KB

english, 1990

26

Investigation of carrier transport in graded gap superlattices by time correlated single photon counting

Lacaita, Andrea, Ralph, Stephen E., Capasso, Federico, Malik, Roger J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 522 KB

english, 1990

27

Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers

Shahzad, K., Petruzzello, J., Olego, D. J., Cammack, D. A., Gaines, J. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 620 KB

english, 1990

28

Selective-area epitaxial growth of gallium arsenide on silicon substrates patterned using a scanning tunneling microscope operating in air

Dagata, J. A., Tseng, W., Bennett, J., Evans, C. J., Schneir, J., Harary, H. H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 570 KB

english, 1990

29

Effect of light on the DX centers in Si- and Te-doped GaAlAs

Seguy, Patrice, Yu, Peter Y., Li, Ming-fu, Leon, Rosa, Chan, K. T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 546 KB

english, 1990

30

Thermal donor formation in Fe-doped semi-insulating InP

von Bardeleben, H. J., Bourgoin, J. C., Kainosho, K., Oda, O.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 422 KB

english, 1990

31

Optical absorption and modulation behavior of strained InxGa1−xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy

Chen, Li, Rajkumar, K. C., Madhukar, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 573 KB

english, 1990

32

Cavity length dependence of the wavelength of strained-layer InGaAs/GaAs lasers

Chen, T. R., Zhuang, Y. H., Eng, L. E., Yariv, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 358 KB

english, 1990

33

Liquid phase epitaxy regrowth of two-dimensional electron gas on GaAs patterned by in situ meltback

Zaslavsky, A., Frei, M. R., Tsui, D. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 521 KB

english, 1990

34

Monte Carlo simulation of hot electrons in silicon p-i-n cold cathodes

Boots, H. M. J., Schuurmans, M. F. H., Arnold, D., Higman, J. M., Hess, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 522 KB

english, 1990

35

New family of high Tc superconductors in the (Tl1−xMx)Sr2(Ca1−yYy)Cu2O7−δ system (M=IVA and VA elements)

Liu, R. S., Zhou, W., Edwards, P. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 542 KB

english, 1990

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