Volume 57; Issue 25

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Applied Physics Letters
Volume 57; Issue 25

Applied Physics Letters

Volume 57; Issue 25

1

Photoluminescence study of sulfide layers on p‐type InP

Leonelli, R., Sundararaman, C. S., Currie, J. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 509 KB

english, 1990

2

Trench Pd/Si metal-oxide-semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor

Fang, Y. K., Hwang, S. B., Lin, C. Y., Lee, C. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 520 KB

english, 1990

3

Determination of the GaInP/AlGaInP band offset

Liedenbaum, C. T. H. F., Valster, A., Severens, A. L. G. J., Hooft, G. W. ’t

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 468 KB

english, 1990

4

Early formation of chemical vapor deposition diamond films

S. Iijima, Y. Aikawa, K. Baba

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 547 KB

english, 1990

5

Raman scattering from quantum dots of Ge embedded in SiO2 thin films

Fujii, Minoru, Hayashi, Shinji, Yamamoto, Keiichi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 658 KB

english, 1990

6

Characterization of diamond-like films using electron probe microanalysis

Pivin, J. C., Spirckel, M., Allouard, M., Rautureau, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 613 KB

english, 1990

7

Maximum density of Pb centers at the (111) Si/SiO2 interface after vacuum anneal

Stesmans, A., Van Gorp, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 693 KB

english, 1990

8

Hot-carrier Coulomb effects in GaAs investigated by femtosecond spectroscopy around the band edge

Gong, T., Nighan, W. L., Fauchet, P. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 570 KB

english, 1990

9

Metalorganic chemical vapor deposition growth of undoped GaAs with a low electron concentration on a Si substrate

Nozaki, S., Wu, A. T., Murray, J. J., George, T., Egawa, T., Umeno, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 505 KB

english, 1990

10

Local electron concentration-dependent electronic stopping power model for Monte Carlo simulation of low-energy ion implantation in silicon

Klein, K. M., Park, C., Tasch, A. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 601 KB

english, 1990

11

Temperature dependence of femtosecond electromagnetic radiation from semiconductor surfaces

Hu, B. B., Zhang, X.-C., Auston, D. H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 621 KB

english, 1990

12

Broad wavelength tunability in gain-levered quantum well semiconductor lasers

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 491 KB

english, 1990

13

Buried monocrystalline aluminum layers in beryllium using ion implantation

Brown, D. W., Musket, R. G., Munir, Z. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 665 KB

english, 1990

14

Interfaces in GaAs/AlAs quantum well structures

Gammon, D., Shanabrook, B. V., Katzer, D. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 663 KB

english, 1990

15

Analysis of SF6 and F2 plasma etched silicon surfaces: An x-ray photoelectron spectroscopy investigation

Brault, P., Ranson, P., Estrade-Szwarckopf, H., Rousseau, B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 470 KB

english, 1990

16

Studies of silicon photoelectrochemical cells under high injection conditions

Kumar, Amit, Lewis, Nathan S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 632 KB

english, 1990

17

Ultra-efficient erbium-doped fiber amplifier

Kimura, Yasuo, Nakazawa, Masataka, Suzuki, Kazunori

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 541 KB

english, 1990

18

Novel AlGaInAs/AlInAs lasers emitting at 1 μm

Chang-Hasnain, C. J., Bhat, R., Zah, C. E., Koza, M. A., Favire, F., Lee, T. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 538 KB

english, 1990

19

Combined impurity gettering and defect passivation in polycrystalline silicon solar cells

Verhoef, L. A., Michiels, P-P., Sinke, W. C., Denisse, C. M. M., Hendriks, M., van Zolingen, R. J. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 643 KB

english, 1990

20

Electrical response of Ba1−xKxBiO3 polycrystalline thin films to infrared radiation

Tanabe, K., Enomoto, Y., Yamaji, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 538 KB

english, 1990

21

Growth kinetics simulation of the Al-Ga self-organization on (100) GaAs vicinal surfaces

Lu, Yan-Ten, Petroff, Pierre, Metiu, Horia

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 528 KB

english, 1990

22

Composition of phosphorus-nitride film deposited on InP surfaces by a photochemical vapor deposition technique and electrical properties of the interface

Jeong, Yoon-Ha, Lee, Jae-Hak, Bae, Young-Ho, Hong, Young-Tae

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 512 KB

english, 1990

23

Quantum well lasers in operation for four years

Waters, R. G., Yellen, S. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 418 KB

english, 1990

24

Enhanced hardness in lattice-matched single-crystal TiN/V0.6Nb0.4N superlattices

Mirkarimi, P. B., Hultman, L., Barnett, S. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 570 KB

english, 1990

25

Study of structural changes in YBa2Cu3O7−x by cathodoluminescence in the scanning electron microscope

Piqueras, J., Fernández, P., Vicent, J. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 515 KB

english, 1990

26

Effect of oxidation gases on the formation of Bi2Sr2CuO6 thin films

Kanai, Masaki, Horiuchi, Ken, Kawai, Tomoji, Kawai, Shichio

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 470 KB

english, 1990

27

Creation of p-n junction in Hg0.3Cd0.7Te

Barbot, J. F., Kronewitz, J., Schröter, W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 548 KB

english, 1990

28

Optical reflectivity and amorphization of GaAs during decompression from megabar pressures

Vohra, Yogesh K., Xia, Hui, Ruoff, Arthur L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 556 KB

english, 1990

29

Observation of solid-state amorphization in the immiscible system Cu-Ta

Sakurai, Kenji, Yamada, Yuh, Ito, Masahisa, Lee, Chung Hyo, Fukunaga, Toshiharu, Mizutani, Uichiro

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 542 KB

english, 1990

30

One-dimensional lateral-field-effect transistor with trench gate-channel insulation

Nieder, J., Wieck, A. D., Grambow, P., Lage, H., Heitmann, D., Klitzing, K. v., Ploog, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 564 KB

english, 1990

31

New substrate PrGaO3 for a high Tc superconducting YBa2Cu3Ox epitaxial film

Sasaura, Masahiro, Mukaida, Masashi, Miyazawa, Shintaro

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 494 KB

english, 1990

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