Volume 57; Issue 26

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Applied Physics Letters
Volume 57; Issue 26

Applied Physics Letters

Volume 57; Issue 26

1

High coercivity in Sm2Fe17Nx magnets

Schnitzke, K., Schultz, L., Wecker, J., Katter, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 570 KB

english, 1990

2

Extended Jones matrix representation for the twisted nematic liquid-crystal display at oblique incidence

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 535 KB

english, 1990

3

Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence-band mixing effects

Corzine, S. W., Yan, R. H., Coldren, L. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 659 KB

english, 1990

4

Composition and growth kinetics of ultrathin SiO2 films formed by oxidizing Si substrates in N2O

Ting, W., Hwang, H., Lee, J., Kwong, D. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 540 KB

english, 1990

5

1.54 μm room-temperature luminescence of MeV erbium-implanted silica glass

Polman, A., Lidgard, A., Jacobson, D. C., Becker, P. C., Kistler, R. C., Blonder, G. E., Poate, J. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 510 KB

english, 1990

6

InGaAs-GaAs-AlGaAs gain-guided arrays operating in the in-phase fundamental array mode

Beernink, K. J., Alwan, J. J., Coleman, J. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 557 KB

english, 1990

7

Low-density high-mobility electron gas in wide parabolic GaAs/AlxGa1−xAs wells

Hopkins, P. F., Rimberg, A. J., Gwinn, E. G., Westervelt, R. M., Sundaram, M., Gossard, A. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 611 KB

english, 1990

8

Quantitative analysis of on bevel electrical junction shifts due to carrier spilling effects

Clarysse, T., Vandervorst, W., Casel, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 532 KB

english, 1990

9

Picosecond on-off switching using a pair of picosecond-on/nanosecond-off GaAs étalons

Lowry, C. W., Gibbs, H. M., Pon, R. M., Khitrova, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 611 KB

english, 1990

10

Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities

Yokoyama, H., Nishi, K., Anan, T., Yamada, H., Brorson, S. D., Ippen, E. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 611 KB

english, 1990

11

Effects of different processes with hydrogen on the photoluminescence of GaAlAs:Si grown by molecular beam epitaxy

Grilli, E., Guzzi, M., Zamboni, R., Bosacchi, A., Franchi, S., Vanzetti, L., Allegri, P., Pavesi, L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 654 KB

english, 1990

12

InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region

Tokumitsu, E., Dentai, A. G., Joyner, C. H., Chandrasekhar, S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 518 KB

english, 1990

13

Observation of charge storage and intersubband relaxation in resonant tunneling via a high sensitivity capacitive technique

Schubert, E. F., Capasso, Federico, Hutchinson, A. L., Sen, S., Gossard, A. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 621 KB

english, 1990

14

Far-infrared cavity dump coupling of the UC Santa Barbara free-electron laser

Kaminski, J. P., Spector, J. S., Felix, C. L., Enyeart, D. P., White, D. T., Ramian, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 603 KB

english, 1990

15

Coherent linear and two-dimensional arrays of multiple quantum well grating-surface-emitting diode lasers emitting at 1.5 μm

Palfrey, S. L., Enstrom, R. E., VanGieson, E. A., Hammer, J. M., Martinelli, Ramon U., Carlson, N. W., Evans, G. A., Andrews, J. T., Appert, J., Stolzenberger, R., Triano, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 569 KB

english, 1990

16

Preparation of NdBa2Cu3O7−δ films in ultrahigh vacuum with a NO2 supersonic molecular beam

Nonaka, Hidehiko, Shimizu, Takashi, Arai, Kazuo

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 625 KB

english, 1990

17

Vertical monolithic integration of a GaAs/AlGaAs V-channeled substrate inner stripe laser diode and a heterojunction bipolar transistor

Jan, Yu-Heng, Lee, Si-Chen

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 511 KB

english, 1990

18

Ultrafast initial relaxation of hot electrons and holes in tetrahedral semiconductors via deformation potential interaction: Theory and experiment

Zollner, Stefan, Gopalan, Sudha, Garriga, Miquel, Humlíček, Josef, Viña, Luis, Cardona, Manuel

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 487 KB

english, 1990

19

Noncontact energy level analysis of metallic impurities in silicon crystals

Kirino, Y., Buczkowski, A., Radzimski, Z. J., Rozgonyi, G. A., Shimura, F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 535 KB

english, 1990

20

Polarization mode selective channel waveguides in an InGaAs/InP disordered superlattice

Suzuki, Yasuhiro, Iwamura, Hidetoshi, Miyazawa, Takeo, Mikami, Osamu

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 521 KB

english, 1990

21

Simple method for creating pulse shortening in x-ray lasers

Rose, S. J., Rogoyski, A. M., Tragin, N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 391 KB

english, 1990

22

Etch rate modeling for ion-irradiated nitrocellulose

Merhari, L., Belorgeot, C., Moliton, J. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 411 KB

english, 1990

23

Hydrogen neutralization of acceptors in highly doped GaInAs:Zn

Jalil, A., Theys, B., Chevallier, J., Huber, A. M., Grattepain, C., Hirtz, P., Pajot, B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 575 KB

english, 1990

24

X-ray photoelectron spectroscopy study of the interfacial reactivity of Si with the oxidized GaAs (100) surface

Cuberes, M. T., Sacedón, J. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 529 KB

english, 1990

25

High-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasers

Chen, T. R., Eng, L. E., Zhuang, Y. H., Xu, Y. J., Zaren, H., Yariv, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 385 KB

english, 1990

26

Extremely thin and defect-free Si-on-insulator fabrication by tunnel epitaxy

Ogura, Atsushi, Fujimoto, Yuki

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 459 KB

english, 1990

27

Quantitative characterization of physical processes during nanometer surface modification

McBride, S. E., Wetsel, G. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 567 KB

english, 1990

28

Control of misoriented grains and pinholes in CoSi2 grown on Si(001)

Jimenez, J. R., Hsiung, L. M., Rajan, K., Schowalter, L. J., Hashimoto, Shin, Thompson, R. D., Iyer, S. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 657 KB

english, 1990

29

Hydrolyzation oxidation of AlxGa1−xAs-AlAs-GaAs quantum well heterostructures and superlattices

Dallesasse, J. M., Holonyak, N., Sugg, A. R., Richard, T. A., El-Zein, N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 504 KB

english, 1990

30

On the linewidth enhancement factor in semiconductor lasers

Olofsson, L., Brown, T. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 530 KB

english, 1990

31

Si(100)-(2×1)boron reconstruction: Self-limiting monolayer doping

Headrick, R. L., Weir, B. E., Levi, A. F. J., Eaglesham, D. J., Feldman, L. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 604 KB

english, 1990

32

Laser action in the blue-green from optically pumped (Zn,Cd)Se/ZnSe single quantum well structures

Ding, J., Jeon, H., Nurmikko, A. V., Luo, H., Samarth, N., Furdyna, J. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 453 KB

english, 1990

33

Electroreflectance and photoluminescence study of the effect of hydrogen on heavily doped GaAs/AlGaAs structures

Yang, D., Garland, J. W., Raccah, P. M., Coluzza, C., Frankl, P., Capizzi, M., Chambers, F., Devane, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 656 KB

english, 1990

34

Ballistic electron studies and modification of the Au/Si interface

Fernandez, A., Hallen, H. D., Huang, T., Buhrman, R. A., Silcox, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 644 KB

english, 1990

35

Asymmetric distribution of microtwins in a GaAs/Si heterostructure grown by molecular beam epitaxy

Xie, Q. H., Fung, K. K., Ding, A. J., Cai, L. H., Huang, Y., Zhou, J. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 700 KB

english, 1990

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