Volume 57; Issue 4

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Applied Physics Letters
Volume 57; Issue 4

Applied Physics Letters

Volume 57; Issue 4

1

InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency

Choi, H. K., Wang, C. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 578 KB

english, 1990

2

Positive‐streamer‐like phenomena in point‐plane corona gaps: Trichel pulses and high‐pressure cathode sheath instabilities

Cernak, Mirko, Hosokawa, Tatsuzo, Inoshima, Masayuki

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 534 KB

english, 1990

3

Wet oxidation of GeSi strained layers by rapid thermal processing

Nayak, D. K., Kamjoo, K., Park, J. S., Woo, J. C. S., Wang, K. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 647 KB

english, 1990

4

Fe/Fe-N multilayer films with low coercivity zero magnetostriction and high saturation magnetization

Shih, K. K., Re, M. E., Dove, D. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 382 KB

english, 1990

5

Copper silicide formation by rapid thermal processing and induced room-temperature Si oxide growth

Setton, M., Van der Spiegel, J., Rothman, B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 514 KB

english, 1990

6

High contrast multiple quantum well optical bistable device with integrated Bragg reflectors

Sfez, B. G., Oudar, J. L., Michel, J. C., Kuszelewicz, R., Azoulay, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 609 KB

english, 1990

7

Defect-free epitaxial lateral overgrowth of oxidized (111) Si by liquid phase epitaxy

Bergmann, R., Bauser, E., Werner, J. H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 633 KB

english, 1990

8

Inducing normally forbidden transitions within the conduction band of GaAs quantum wells

Pan, Janet L., West, Lawrence C., Walker, Susan J., Malik, Roger J., Walker, John F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 601 KB

english, 1990

9

Extremely high-selective electron cyclotron resonance plasma etching for phosphorus-doped polycrystalline silicon

Samukawa, Seiji, Suzuki, Yasuhiro, Sasaki, Masami

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 577 KB

english, 1990

10

Influence of defect absorption on the absorption edge in Hg0.8Cd0.2Te

Wang, Jue, Lu, Wei, Liu, Jiming, Yu, Zhenzhong, Tang, Dingyuan

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 506 KB

english, 1990

11

Phonons in epitaxially grown α-Sn1−xGex alloys

Menéndez, J., Sinha, K., Höchst, H., Engelhardt, M. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 632 KB

english, 1990

12

Tunable long-wavelength detectors using graded barrier quantum wells grown by electron beam source molecular beam epitaxy

Levine, B. F., Bethea, C. G., Shen, V. O., Malik, R. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 492 KB

english, 1990

13

Microwave surface resistance of epitaxial YBa2Cu3O7 thin films on sapphire

Char, K., Newman, N., Garrison, S. M., Barton, R. W., Taber, R. C., Laderman, S. S., Jacowitz, R. D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 557 KB

english, 1990

14

Nucleation enhancement of diamond synthesized by combustion flame techniques

Ravi, K. V., Koch, C. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 633 KB

english, 1990

15

Thermally induced hole-electron competition in photorefractive InP:Fe due to the Fe2+ excited state

Delaye, P., Halter, P. U., Roosen, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 563 KB

english, 1990

16

Determination of the density of states effective mass and the energy minimum of the X7 satellite conduction band in GaAs from the X6→X7 absorption spectrum

Wang, W. B., Ockman, N., Cavicchia, M. A., Alfano, R. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 610 KB

english, 1990

17

Improved microwave performance in transistors based on real space electron transfer

Hueschen, Mark R., Moll, Nick, Fischer-Colbrie, Alice

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 526 KB

english, 1990

18

Void formation, electrical activation, and layer intermixing in Si-implanted GaAs/AlGaAs superlattices

Lee, S.-Tong, Chen, Samuel, Braunstein, G., Ko, Kei-Yu, Ott, Mary L., Tan, T. Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 649 KB

english, 1990

19

Atomic layer epitaxy of AlGaAs

Gong, J. R., Jung, D., El-Masry, N. A., Bedair, S. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 590 KB

english, 1990

20

Gain and gain saturation spectra in 1.5 μm multiple quantum well optical amplifiers

Eisenstein, G., Koren, U., Raybon, G., Wiesenfeld, J. M., Wegener, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 422 KB

english, 1990

21

Photoinduced hole carriers and enhanced resistance to photorefraction in Mg-doped LiNbO3 crystals

Wang, Hong, Wen, Jin-ke, Li, Jiang, Wang, Hua-fu, Jing, Jing

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 416 KB

english, 1990

22

Correlation between electronegativity and dopant activity in ion-implanted semi-insulating GaAs

Srinivasan, G., Sealy, B. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 377 KB

english, 1990

23

Nonlinear optical properties of molecular beam epitaxy grown Bi1−xSbx

Youngdale, E. R., Meyer, J. R., Hoffman, C. A., Bartoli, F. J., Partin, D. L., Thrush, C. M., Heremans, J. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 513 KB

english, 1990

24

Defect-free, conformally grown (100) GaAs films

Pribat, D., Dupuy, M., Legagneux, P., Collet, C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 645 KB

english, 1990

25

Atomic structure of twins in GaAs

Lee, Byung-Teak, Lee, Jeong Yong, Bourret, Edith D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 455 KB

english, 1990

26

Low-noise high-speed dc superconducting quantum interference device magnetometer with simplified feedback electronics

Drung, D., Cantor, R., Peters, M., Scheer, H. J., Koch, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 580 KB

english, 1990

27

Very low drive voltage optical waveguide modulation in an InGaAs/InAlAs superlattice

Bigan, E., Allovon, M., Carre, M., Voisin, P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 504 KB

english, 1990

28

Asymmetric conductance peaks observed in silicon metal-oxide-semiconductor capacitors

Collins, S., Kirton, M. J., Uren, M. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 524 KB

english, 1990

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